Solar Cell With Cell Architecture Designated for Reduced Carrier Recombination
A solar cell is disclosed. The solar cell incudes a substrate, a dielectric layer formed on a backside of the substrate, and a plurality of non-contiguous deposited emitter regions having a first polarity on the dielectric layer. The solar cell also includes at least one deposited emitter region having a second polarity on the dielectric layer, laterally disposed to the plurality of non-contiguous deposited emitter regions.
1 . A solar cell, comprising:
a substrate;
a dielectric layer formed on a backside of the substrate;
a plurality of non-contiguous deposited emitter regions having a first polarity on the dielectric layer; and
at least one deposited emitter region having a second polarity on the dielectric layer, laterally disposed to the plurality of non-contiguous deposited emitter regions.
2 . The solar cell of claim 1 , wherein the plurality of non-contiguous deposited emitter regions comprise doped polysilicon.
3 . The solar cell of claim 1 , further comprising a wiring layer that contacts the plurality of non-contiguous deposited emitter regions having the first polarity.
4 . The solar cell of claim 3 , wherein the wiring layer that contacts the plurality of non-contiguous deposited emitter regions having the first polarity extends above the at least one deposited emitter region having the second polarity.
5 . The solar cell of claim 1 , further comprising a wiring layer that contacts the at least one deposited emitter region having the second polarity.
6 . The solar cell of claim 5 , wherein the wiring layer that contacts the at least one deposited emitter region having the second polarity extends above at least one of the plurality of non-contiguous deposited emitter regions having the first polarity.
7 . The solar cell of claim 1 , further comprising a plurality of doped regions in the substrate surrounding the plurality of non-contiguous deposited emitter regions having the first polarity.
8 . The solar cell of claim 1 , further comprising a dielectric layer formed on parts of a top surface of the plurality of non-contiguous deposited emitter regions having the first polarity.
9 . The solar cell of claim 1 , further comprising a dielectric layer formed on parts of a top surface of the at least one deposited emitter region having the second polarity.
10 . The solar cell of claim 9 , wherein the dielectric layer is a doped insulating layer.
11 . The solar cell of claim 1 , wherein said plurality of non-contiguous deposited emitter regions having a first polarity have a perimeter shape selected from the group consisting essentially of circular, rectangular, elliptical, elongated and irregular.
12 . The solar cell of claim 7 , wherein the plurality of doped regions in the substrate surrounding the plurality of non-contiguous deposited emitter regions having the first polarity have the first polarity.
13 . The solar cell of claim 12 , wherein the first polarity is p-type.
14 . The solar cell of claim 12 , wherein the polarity of the substrate is n-type.
15 . A method for forming a solar cell, comprising:
forming a substrate;
forming a dielectric layer formed on a backside of the substrate;
forming a plurality of non-contiguous deposited emitter regions having a first polarity on the dielectric layer; and
forming at least one deposited emitter region having a second polarity on the dielectric layer, laterally disposed to the plurality of non-contiguous deposited emitter regions.
16 . The method of claim 15 , wherein the forming the plurality of non-contiguous deposited emitter regions comprises forming the plurality of non-contiguous deposited emitter regions to comprise doped polysilicon.
17 . The method of claim 15 , further comprising forming a wiring layer that contacts the plurality of non-contiguous deposited emitter regions having the first polarity.
18 . The method of claim 17 , wherein the wiring layer that contacts the plurality of non-contiguous deposited emitter regions having the first polarity extends above the at least one deposited emitter region having the second polarity.
19 . The method of claim 15 , further comprising forming a wiring layer that contacts the at least one deposited emitter region having the second polarity.
20 . The method of claim 19 , wherein the wiring layer that contacts the at least one deposited emitter region having the second polarity extends above at least one of the plurality of non-contiguous deposited emitter regions having the first polarity.