IP Library Granted Patent US 12,666,769
Granted Patent B2
US 12,666,769 · App. 18/123,705 · Granted Jun 23, 2026

System and method for selected pump LEDs with multiple phosphors

Inventors: Aurelien J.F. David (San Francisco, CA); Arpan Chakraborty (Los Angeles, CA); Michael Ragan Krames (Los Altos, CA); Troy Trottier (Los Angeles, CA)
Assignee: KORRUS, INC.
H10H20/8513C09K11/0883C09K11/565C09K11/77348C09K11/7739C09K11/7774H10H20/813H10H20/825H10H20/8506H10H20/853H10H20/851H10W90/00Y02B20/00
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Quick Facts
Patent No.
US 12,666,769
App. No.
18/123,705
Filed
Mar 20, 2023
Granted
Jun 23, 2026
Kind
B2
Art Unit
2891
USPC
257/76
Abstract

An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

Claims (13)

1 . A light emitting system for emitting white light, said light emitting system comprising:

light emitting diodes (LEDs) comprising at least

a first set of LEDs comprising at least one first LED and emitting a first light having a first peak wavelength in a range 405-430 nm,

a second set of LEDs comprising at least one second LED and emitting a second light having a second peak wavelength which is longer than the first peak wavelength; and

wavelength-converting materials, configured to substantially absorb a portion of light from said LEDs and convert it to a third light and a fourth light;

wherein said white light comprises at least a portion of said first, second, third, and fourth lights.

2 . The system of claim 1 , wherein the second set of LEDs are blue LEDs.

3 . The system of claim 1 , wherein said wavelength-converting materials are disposed over one of the first or second sets of LEDs.

4 . The system of claim 1 , wherein said wavelength-converting materials comprises a green phosphor and a red phosphor.

5 . The system of claim 1 , wherein the wavelength-converting material does not include a blue phosphor.

6 . The system of claim 1 , wherein the first set of LEDs is characterized by an internal quantum efficiency of at least 70% when operated at a current density of 100 A·cm−2.

7 . The system of claim 1 , wherein said third light is green light and said fourth light is red light.

8 . The system of claim 1 , wherein said first and second lights are saturated and said third and fourth lights are unsaturated.

Continuity (6)
Continuation 16915466 · Jun 29, 2020
Continuation 15489261 · Apr 17, 2017
Continuation 15077387 · Mar 22, 2016
Continuation 13211145 · Aug 16, 2011
Provisional Application 61502212 · Jun 28, 2011
Related Publication 20230420619A1 · Dec 28, 2023
References Cited (274)
US 4727003A · Ohseto · 1988 [cited by applicant]
US 4918497A · Edmond · 1990 [cited by applicant]
US 4946621A · Fouassier · 1990 [cited by applicant]
US 5077161A · Law · 1991 [cited by applicant]
US 5110931A · Dietz · 1992 [cited by applicant]
US 5120051A · Greenberg · 1992 [cited by applicant]
US 5142387A · Shikama · 1992 [cited by applicant]
US 5208462A · O'Connor · 1993 [cited by applicant]
US 5211467A · Seder · 1993 [cited by applicant]
US 5237182A · Kitagawa · 1993 [cited by applicant]
US 5369289A · Tamaki · 1994 [cited by applicant]
US 5518808A · Bruno · 1996 [cited by applicant]
US 5535230A · Abe · 1996 [cited by applicant]
US 5637531A · Porowski · 1997 [cited by applicant]
US 5679152A · Tischler · 1997 [cited by applicant]
US 5770887A · Tadatomo · 1998 [cited by applicant]
US 5959316A · Lowery · 1999 [cited by applicant]
US 5962971A · Chen · 1999 [cited by applicant]
US 6137217A · Pappalardo · 2000 [cited by applicant]
US 6234648B1 · Boerner · 2001 [cited by applicant]
US 6275145B1 · Rogozinski · 2001 [cited by applicant]
US 6335771B1 · Hiraishi · 2002 [cited by applicant]
US 6413627B1 · Motoki · 2002 [cited by applicant]
US 6440823B1 · Vaudo · 2002 [cited by applicant]
US 6466135B1 · Srivastava · 2002 [cited by applicant]
US 6468347B1 · Motoki · 2002 [cited by applicant]
US 6468882B2 · Motoki · 2002 [cited by applicant]
US 6488767B1 · Xu · 2002 [cited by applicant]
US 6498355B1 · Harrah · 2002 [cited by applicant]
US 6504301B1 · Lowery · 2003 [cited by applicant]
US 6559075B1 · Kelly · 2003 [cited by applicant]
US 6600175B1 · Baretz · 2003 [cited by applicant]
US 6621211B1 · Srivastava · 2003 [cited by applicant]
US 6635904B2 · Goetz · 2003 [cited by applicant]
US 6642652B2 · Collins, III · 2003 [cited by applicant]
US 6853010B2 · Slater, Jr. · 2005 [cited by applicant]
US 6956246B1 · Epler · 2005 [cited by applicant]
US 6967116B2 · Negley · 2005 [cited by applicant]
US 7009199B2 · Hall · 2006 [cited by applicant]
US 7033858B2 · Chai · 2006 [cited by applicant]
US 7083302B2 · Chen · 2006 [cited by applicant]
US 7091661B2 · Ouderkirk · 2006 [cited by applicant]
US 7113658B2 · Ide · 2006 [cited by applicant]
US 7220324B2 · Baker · 2007 [cited by applicant]
US 7253446B2 · Sakuma · 2007 [cited by applicant]
US 7318651B2 · Chua · 2008 [cited by applicant]
US 7332746B1 · Takahashi · 2008 [cited by applicant]
US 7358543B2 · Chua · 2008 [cited by applicant]
US 7361938B2 · Mueller · 2008 [cited by applicant]
US 7419281B2 · Porchia et al. · 2008 [cited by applicant]
US 7521862B2 · Mueller · 2009 [cited by applicant]
US 7615795B2 · Baretz · 2009 [cited by applicant]
US 7646033B2 · Tran · 2010 [cited by applicant]
US 7737457B2 · Kolodin · 2010 [cited by applicant]
US 7791093B2 · Basin · 2010 [cited by applicant]
US 7884538B2 · Mitsuishi · 2011 [cited by applicant]
US 7902564B2 · Mueller-Mach · 2011 [cited by applicant]
US 7906793B2 · Negley · 2011 [cited by applicant]
US 7923741B1 · Zhai · 2011 [cited by applicant]
US 7943945B2 · Baretz · 2011 [cited by applicant]
US 8044412B2 · Murphy · 2011 [cited by applicant]
US 8124996B2 · Raring · 2012 [cited by applicant]
US 8192047B2 · Bailey · 2012 [cited by examiner]
US 8203161B2 · Simonian · 2012 [cited by applicant]
US 8207554B2 · Shum · 2012 [cited by applicant]
US 8269245B1 · Shum · 2012 [cited by applicant]
US 8299473B1 · Mark · 2012 [cited by applicant]
US 8310143B2 · Van De Ven · 2012 [cited by applicant]
US 8362603B2 · Lim · 2013 [cited by applicant]
US 8459840B2 · Ishimori · 2013 [cited by applicant]
US 8519437B2 · Chakraborty · 2013 [cited by applicant]
US 8558265B2 · Raring · 2013 [cited by applicant]
US 8576147B2 · Koyama · 2013 [cited by applicant]
US 8618560B2 · Mark · 2013 [cited by applicant]
US 8704258B2 · Tasaki · 2014 [cited by applicant]
US 8740413B1 · Krames · 2014 [cited by applicant]
US 8905588B2 · Krames · 2014 [cited by applicant]
US 8933644B2 · David · 2015 [cited by applicant]
US 9046227B2 · David · 2015 [cited by applicant]
US 9293667B2 · David · 2016 [cited by applicant]
US 9660152B2 · David · 2017 [cited by applicant]
US 10700244B2 · David · 2020 [cited by applicant]
US 11611023B2 · David · 2023 [cited by examiner]
US 20010022495A1 · Salam · 2001 [cited by applicant]
US 20010055208A1 · Kimura · 2001 [cited by applicant]
US 20020088985A1 · Komoto · 2002 [cited by applicant]
US 20020171092A1 · Goetz · 2002 [cited by applicant]
US 20030080345A1 · Motoki · 2003 [cited by applicant]
US 20030145783A1 · Motoki · 2003 [cited by applicant]
US 20030214616A1 · Komoto · 2003 [cited by applicant]
US 20040016938A1 · Baretz · 2004 [cited by applicant]
US 20040036079A1 · Nakada · 2004 [cited by applicant]
US 20040066140A1 · Omoto · 2004 [cited by applicant]
US 20040195598A1 · Tysoe · 2004 [cited by applicant]
US 20040201598A1 · Eliav · 2004 [cited by applicant]
US 20040207998A1 · Suehiro · 2004 [cited by applicant]
US 20040217364A1 · Tarsa · 2004 [cited by applicant]
US 20040227149A1 · Ibbetson · 2004 [cited by applicant]
US 20050084218A1 · Ide · 2005 [cited by applicant]
US 20050109240A1 · Maeta · 2005 [cited by applicant]
US 20050179376A1 · Fung · 2005 [cited by applicant]
US 20050199899A1 · Lin · 2005 [cited by applicant]
US 20050218780A1 · Chen · 2005 [cited by applicant]
US 20050224830A1 · Blonder · 2005 [cited by applicant]
US 20050247260A1 · Shin · 2005 [cited by applicant]
US 20050285128A1 · Scherer · 2005 [cited by applicant]
US 20060038542A1 · Park · 2006 [cited by applicant]
US 20060049416A1 · Baretz · 2006 [cited by applicant]
US 20060068154A1 · Parce · 2006 [cited by applicant]
US 20060097385A1 · Negley · 2006 [cited by applicant]
US 20060138435A1 · Tarsa · 2006 [cited by applicant]
US 20060175624A1 · Sharma · 2006 [cited by applicant]
US 20060205199A1 · Baker · 2006 [cited by applicant]
US 20060208262A1 · Sakuma · 2006 [cited by applicant]
US 20070018184A1 · Beeson · 2007 [cited by applicant]
US 20070086916A1 · Leboeuf · 2007 [cited by applicant]
US 20070120141A1 · Moustakas · 2007 [cited by applicant]
US 20070126023A1 · Haskell · 2007 [cited by applicant]
US 20070181895A1 · Nagai · 2007 [cited by applicant]
US 20070210074A1 · Maurer · 2007 [cited by applicant]
US 20070228404A1 · Tran · 2007 [cited by applicant]
US 20070231963A1 · Doan · 2007 [cited by applicant]
US 20070272933A1 · Kim · 2007 [cited by applicant]
US 20080083741A1 · Giddings · 2008 [cited by applicant]
US 20080087919A1 · Tysoe · 2008 [cited by applicant]
US 20080106186A1 · Ishii · 2008 [cited by applicant]
US 20080149166A1 · Beeson · 2008 [cited by applicant]
US 20080149949A1 · Nakamura · 2008 [cited by applicant]
US 20080149959A1 · Nakamura · 2008 [cited by applicant]
US 20080192791A1 · Furukawa · 2008 [cited by applicant]
US 20080194054A1 · Lin · 2008 [cited by applicant]
US 20080210958A1 · Senda · 2008 [cited by applicant]
US 20080224597A1 · Baretz · 2008 [cited by applicant]
US 20080261341A1 · Zimmerman · 2008 [cited by applicant]
US 20080274574A1 · Yun · 2008 [cited by applicant]
US 20090026913A1 · Mrakovich · 2009 [cited by examiner]
US 20090050908A1 · Yuan · 2009 [cited by applicant]
US 20090087775A1 · Kunou · 2009 [cited by applicant]
US 20090140630A1 · Kijima · 2009 [cited by applicant]
US 20090146170A1 · Zhong · 2009 [cited by applicant]
US 20090173958A1 · Chakraborty · 2009 [cited by applicant]
US 20090207873A1 · Jansen · 2009 [cited by applicant]
US 20090224652A1 · Li · 2009 [cited by applicant]
US 20090250686A1 · Sato · 2009 [cited by applicant]
US 20090252191A1 · Kubota · 2009 [cited by applicant]
US 20090273005A1 · Lin · 2009 [cited by applicant]
US 20090302338A1 · Nagai · 2009 [cited by applicant]
US 20090309110A1 · Raring · 2009 [cited by applicant]
US 20090315480A1 · Yan · 2009 [cited by applicant]
US 20090321776A1 · Kim · 2009 [cited by applicant]
US 20090321778A1 · Chen · 2009 [cited by applicant]
US 20100001300A1 · Raring · 2010 [cited by applicant]
US 20100006873A1 · Raring · 2010 [cited by applicant]
US 20100025656A1 · Raring · 2010 [cited by applicant]
US 20100044718A1 · Hanser · 2010 [cited by applicant]
US 20100104495A1 · Kawabata · 2010 [cited by applicant]
US 20100117106A1 · Trottier · 2010 [cited by applicant]
US 20100149814A1 · Zhai · 2010 [cited by applicant]
US 20100258830A1 · Ide · 2010 [cited by applicant]
US 20100289044A1 · Krames · 2010 [cited by applicant]
US 20100290208A1 · Pickard · 2010 [cited by applicant]
US 20100291313A1 · Ling · 2010 [cited by applicant]
US 20100327291A1 · Preble · 2010 [cited by applicant]
US 20110038154A1 · Chakravarty · 2011 [cited by applicant]
US 20110069490A1 · Liu · 2011 [cited by applicant]
US 20110103064A1 · Coe-Sullivan · 2011 [cited by applicant]
US 20110108865A1 · Aldaz · 2011 [cited by applicant]
US 20110121331A1 · Simonian · 2011 [cited by applicant]
US 20110186874A1 · Shum · 2011 [cited by applicant]
US 20110186887A1 · Trottier · 2011 [cited by applicant]
US 20110215348A1 · Trottier · 2011 [cited by applicant]
US 20110227469A1 · Yuan · 2011 [cited by applicant]
US 20110279998A1 · Su · 2011 [cited by applicant]
US 20110291548A1 · Nguyen The · 2011 [cited by applicant]
US 20110317397A1 · Trottier · 2011 [cited by applicant]
US 20120235201A1 · Shum · 2012 [cited by applicant]
US 20130082292A1 · Wei · 2013 [cited by applicant]
US 20140119024A1 · Yu · 2014 [cited by applicant]
CN 1538534A · 2004 [cited by applicant]
CN 1702836A · 2005 [cited by applicant]
CN 1874019A · 2006 [cited by applicant]
CN 101009347A · 2007 [cited by applicant]
CN 101099245A · 2008 [cited by applicant]
CN 101171692A · 2008 [cited by applicant]
CN 101515700 · 2009 [cited by applicant]
CN 100547815 · 2009 [cited by applicant]
EP 2267190 · 2010 [cited by applicant]
JP H10319877 · 1998 [cited by applicant]
JP H1140845A · 1999 [cited by applicant]
JP 2001501380 · 2001 [cited by applicant]
JP 2002217454A · 2002 [cited by applicant]
JP 2002252371A · 2002 [cited by applicant]
JP 2003101081A · 2003 [cited by applicant]
JP 2003141905 · 2003 [cited by applicant]
JP 2004071726 · 2004 [cited by applicant]
JP 2004071726A · 2004 [cited by applicant]
JP 2004128444A · 2004 [cited by applicant]
JP 2004207519A · 2004 [cited by applicant]
JP 2004320024 · 2004 [cited by applicant]
JP 2005244226A · 2005 [cited by applicant]
JP 2006186022 · 2006 [cited by applicant]
JP 2006520095 · 2006 [cited by applicant]
JP 2006257290A · 2006 [cited by applicant]
JP 2006308858A · 2006 [cited by applicant]
JP 2006310817A · 2006 [cited by applicant]
JP 2007188962A · 2007 [cited by applicant]
JP 2007524119A · 2007 [cited by applicant]
JP 2007287678 · 2007 [cited by applicant]
JP 2008091488A · 2008 [cited by applicant]
JP 2008159606A · 2008 [cited by applicant]
JP 2008192797 · 2008 [cited by applicant]
JP 2008311532A · 2008 [cited by applicant]
JP 2009001677 · 2009 [cited by applicant]
JP 2009130097A · 2009 [cited by applicant]
JP 2009135306 · 2009 [cited by applicant]
JP 2009179662A · 2009 [cited by applicant]
JP 2009200337 · 2009 [cited by applicant]
JP 2009543335 · 2009 [cited by applicant]
JP 2010510654A · 2010 [cited by applicant]
JP 2010535403 · 2010 [cited by applicant]
JP 2013525007 · 2013 [cited by applicant]
JP 2013536583A · 2013 [cited by applicant]
JP 2015094496 · 2015 [cited by applicant]
WO 2006068141 · 2006 [cited by applicant]
WO 2006123259 · 2006 [cited by applicant]
WO 2007091920 · 2007 [cited by applicant]
WO 2009013695A2 · 2009 [cited by applicant]
WO 2009066430 · 2009 [cited by applicant]
WO 2009130636 · 2009 [cited by applicant]
WO 2010017148 · 2010 [cited by applicant]
WO 2010150880 · 2010 [cited by applicant]
WO 2012024636A2 · 2012 [cited by applicant]
WO 2012127349 · 2012 [cited by applicant]
WO 2012164426 · 2012 [cited by applicant]
Bockowski, ‘Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE’, Journal of Crystal Growth, 2002, vol. 246, 3-4, pp. 194-206. [cited by applicant]
Chinese Office Action From Chinese Patent Application No. 200980134723.8 dated Mar. 2, 2022, 15 pgs. (With Translation). [cited by applicant]
Chinese Office Action From Chinese Patent Application No. 200980134723.8 dated Nov. 1, 2012, 22 pgs. (With Translation). [cited by applicant]
Chinese Office Action mailed Apr. 30, 2021, for Application No. 201710543269.8, including English translation (6 pages). [cited by applicant]
Chinese Office Action mailed Aug. 8, 2022, in Chinese Application No. 201710543269.8, including English Machine Translation, 11 pages. [cited by applicant]
Chinese Office Action mailed Dec. 19, 2018, in Chinese Application No. 201710543269.8, including English Translation (19 pages). [cited by applicant]
Chinese Office Action mailed Jul. 8, 2019, in Chinese Application No. 201710543269.8, including English Translation, 9 pages. [cited by applicant]
Communication from the German Patent Office re 11 2011 102 386.3 dated May 14, 2013, 8 pages. [cited by applicant]
Communication from the Japanese Patent Office re 2011-522148 dated Mar. 14, 2013, 5 pages. [cited by applicant]
Communication from the Japanese Patent Office re 2011-522148, dated Oct. 22, 2013, 6 pages. [cited by applicant]
Communication from the Japanese Patent Office re 2013-525007 dated Mar. 28, 2014, (4 pages). [cited by applicant]
Dulda et al., “Photoluminescence and morphology of flux grown BAM phosphor using a novel synthesis method”, Journal of Ceramic Processing Research, 2009, vol. 10, No. 6p. 811-816. [cited by applicant]
German Office Action mailed Jul. 5, 2018 for Application No. 11 2011 102 386.3, including English translation, (14 pages). [cited by applicant]
German Office Action mailed May 3, 2021, for Application No. 11 2011 102 386.3, including English translation, (10 pages). [cited by applicant]
Hiramatsu et al., ‘Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (Facelo)’, Journal of Crystal Growth, vol. 221, No. 1-4, Dec. 2000, pp. 316-326. [cited by applicant]
Iso et al., “High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate,” 2007, Japanese Journal of Applied Physics, vol. 46, No. 40, pp. L960-L962. [cited by applicant]
Japanese Office Action mailed Jul. 3, 2018, in Japanese Application No. 2017-122984, including English translation (11 pages). [cited by applicant]
Japanese Office Action mailed Mar. 12, 2019 for Japanese Application No. 2017-122984, including Engliash translation (9 pages). [cited by applicant]
Kelly et al., 'Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitay and Laser-Induced Liftoff, Japanese Journal of Applied Physics, vol. 38, 1999, pp. L217-L219. [cited by applicant]
Korean Office Action mailed Aug. 14, 2019, in Korean Application No. 10-2019-7011564, including English Translation (14 pages). [cited by applicant]
Korean Office Action mailed Jul. 2, 2020, in Korean Application No. 10-2019-7011564, including English Translation (13 pages). [cited by applicant]
Korean Office Action mailed Mar. 13, 2023, for Application No. 10-2021-7024897, including English translation. [cited by applicant]
Korean Office Action mailed May 6, 2021, for Application No. 10-2019-7011564, including English machine translation. [cited by applicant]
Korean Office Action mailed Sep. 23, 2022, for Application No. 10-2021-7024897, including English translation. [cited by applicant]
Madelung, ‘III-V Compounds’, Semiconductors: Data Handbook, Springer Verlag, Berlin-Heidelberg, vol. 3, Ch. 2, 2004, pp. 71-172. [cited by applicant]
Manh et al., “Effects of Annealing on the Luminescence Properties of BaMgA110O17:Eu2+ Blue Emitting Phosphor”, International Journal of Engineering and Innovative Technology (IJEIT), Dec. 2013, vol. 3, Issue 6p. 67-70. [cited by applicant]
Notice of Allowance mailed Jan. 22, 2019, in Korean Application No. 10-2018-7012715, including English Translation (3 pages). [cited by applicant]
Notice to File a Response mailed Nov. 11, 2021 in Korean Application No. 10-2021-7024897, including English translation. [cited by applicant]
Notification of Reexamination mailed Aug. 30, 2021, in Chinese Application No. 201710543269.8, including English translation. [cited by applicant]
Office Action mailed Aug. 1, 2018, in Korean Application No. 10-2018-7012715, including English translation (5 pages). [cited by applicant]
Porowski et al., ‘Thermodynamical Properties of III-V Nitrides and Crystal Growth of GaN at High N2 Pressure’, Journal of Crystal Growth, 1997, vol. 178, pp. 174-188. [cited by applicant]
Ravichandran et al., “Crystal chemistry and luminescence of the EU2+-active alkaline earth aluminate phosphors”, Displays, 1999, p. 197-203. [cited by applicant]
Sato et al., “Optical properties of yellow light-emitting diodes grown on semipolar (1122) bulk GaN substrate”, Applied Physics Letters, vol. 92, No. 22, 2008, pp. 221110-221110-3. [cited by applicant]
Search and Examination report for application PCT/US2011/048499 (Feb. 14, 2012), 9 pages. [cited by applicant]
Wang et al., “Synthesis of Nanosized Luminescent Materials and Their Photoluminescence under VUV Excitation”, Advances in Nanocomposites-Synthesis, Characterization and Industrial Applications, INTECH, Apr. 2011, Chapte… [cited by applicant]
Weaver et al., 'Optical Properties of Selected Elements', Handbook of Chemistry and Physics, vol. 94, 2013-2014, pp. 12-126-12-140. [cited by applicant]
X. Xu et al., “Growth and Characterization of Low Defect GaN by Hydride Vapor Phase Epitaxy”, J. Cryst. Growth 246, pp. 223-249 (2002). [cited by applicant]
Xu et al., Acid Etching for accurate determination of dislocation density in GaN', J. Electronic Materials, 2002, vol. 31, pp. 402-405. [cited by applicant]
Korean Office Action mailed Sep. 2, 2025, in Application No. 10-2023-7027581, inclusing English language translation. [cited by applicant]
Korean Office Action mailed May 1, 2024, for Application No. 10-2023-7027581, including English translation, 9 pages. [cited by applicant]