IP Library Granted Patent US 12,550,514
Granted Patent B2
US 12,550,514 · App. 18/128,327 · Granted Feb 10, 2026

Light-emitting device with cavity between top electrode pad and protective layer

Inventors: Yong-Yang Chen (Hsinchu, TW); Chao-Hsing Chen (Hsinchu, TW); Chi-Shiang Hsu (Hsinchu, TW)
Assignee: EPISTAR CORPORATION
H10H29/142
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Quick Facts
Patent No.
US 12,550,514
App. No.
18/128,327
Granted
Feb 10, 2026
Kind
B2
Abstract

A light-emitting device comprises a plurality of light-emitting elements, comprising a first group light-emitting elements and a second group light-emitting elements; a trench separating the plurality of light-emitting units; a first electrode pad covering the first group light-emitting elements and located on the trench; a second electrode pad covering the second group light-emitting elements and located on the trench; and a cavity located on the trench, formed between the first electrode pad and the protective layer or formed between the second electrode pad and the protective layer.

Claims (26)

1 . A light-emitting device, comprising:

a plurality of light-emitting elements, comprising a first group light-emitting elements and a second group light-emitting elements;

a trench separating the plurality of light-emitting elements;

a protective layer covering the plurality of light-emitting elements;

a first electrode pad covering the first group light-emitting elements and located on the trench;

a second electrode pad covering the second group light-emitting elements and located on the trench; and

a cavity located on the trench, formed between the first electrode pad and the protective layer or formed between the second electrode pad and the protective layer.

2 . The light-emitting device according to claim 1 , wherein in a cross-sectional view of the light-emitting device, the first electrode pad or the second electrode pad includes a lower surface including a curved surface.

3 . The light-emitting device according to claim 1 , further including a patterned sacrificial layer formed in the cavity.

4 . The light-emitting device according to claim 3 , wherein the patterned sacrificial layer includes organic material or inorganic material.

5 . The light-emitting device according to claim 3 , wherein the cavity includes a height between 1 μm and 5 μm.

6 . The light-emitting device according to claim 3 , wherein the patterned sacrificial layer includes a thickness between 1 μm and 5 μm.

7 . The light-emitting device according to claim 1 , further including a first bonding pad and a second bonding pad respectively formed on the first electrode pad and the second electrode pad.

8 . The light-emitting device according to claim 7 , wherein the first bonding pad and the second bonding pad include solder paste.

9 . The light-emitting device according to claim 7 wherein the first bonding pad and the second bonding pad each includes a thickness respectively larger than that of the first electrode pad and that of the second electrode pad.

10 . The light-emitting device according to claim 1 , wherein the protective layer includes one or more first protective layer openings formed between the first electrode pad and the first group light-emitting elements, and one or more second protective layer openings formed between the second electrode pad and the second group light-emitting elements.

11 . The light-emitting device according to claim 1 , wherein the light-emitting device includes a side having a length between 800 μm and 2000 μm.

12 . The light-emitting device according to claim 1 , further including a substrate, wherein the substrate includes an isolation region including a first width uncovered around the plurality of light-emitting elements.

13 . The light-emitting device according to claim 12 , wherein the trench includes a second width smaller than the first width.

14 . The light-emitting device according to claim 1 , wherein the plurality of light-emitting elements each includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer.

15 . The light-emitting device according to claim 14 , wherein the plurality of light-emitting elements each includes a plurality of concave portions extending toward an interior of each of the plurality of light-emitting elements, and the first semiconductor layer is uncovered in the plurality of concave portions.

16 . The light-emitting device according to claim 15 , wherein an amount of concave portions arranged on a longer side of the plurality of light-emitting elements is larger than that arranged on a shorter side of the plurality of light-emitting elements.

17 . The light-emitting device according to claim 15 , further including a first extension electrode including a plurality of first extension electrode convex portions respectively corresponding to the plurality of concave portions of the plurality of the light-emitting elements.

18 . The light-emitting device according to claim 17 , further including an upper insulating layer covering the plurality of light-emitting elements, wherein the upper insulating layer includes a plurality of first upper insulating layer openings respectively formed on the plurality of concave portions to uncover the first semiconductor layer of each of the plurality of light-emitting elements.

19 . The light-emitting device according to claim 18 , wherein the plurality of first extension electrode convex portions covers a portion of the plurality of first upper insulating layer openings.

20 . The light-emitting device according to claim 17 , wherein the first extension electrode partially overlaps with the first electrode pad.

Assignments (2)
CHANGE OF NAME Recorded Feb 18, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075171/0402 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 3, 2023
From: CHEN, YONG-YANG; CHEN, CHAO-HSING; HSU, CHI-SHIANG
To: EPISTAR CORPORATION
Reel/Frame 063200/0195 →
Priority Claims (1)
TW 111112519 · Mar 31, 2022 · national
Continuity (1)
Related Publication 20230317765A1 · Oct 5, 2023
References Cited (5)
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US 20230317765A1 · Chen · 2023 [cited by examiner]
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