Light-emitting device with internal non-specular light redirection and anti-reflective exit surface
A light-emitting device includes a semiconductor diode structure with one or more light-emitting active layers, an anti-reflection coating on its front surface, and a redirection layer on its back surface. Active-layer output light propagates within the diode structure. The anti-reflection coating on the front surface increases transmission of active-layer output light incident below the critical angle Θc. Active-layer output light incident on the redirection layer at an incidence angle greater than Θc is redirected to propagate toward the front surface at an incidence angle that is less than Θc. Device output light is transmitted by the front surface to propagate in an ambient medium, and includes first and second portions of the active-layer output light incident on the front surface at an incidence angle less than Θc, the first portion without redirection by the redirection layer and the second portion with redirection by the redirection layer.
1. A semiconductor light-emitting device comprising:
a semiconductor light-emitting diode structure having front and back surfaces and one or more light-emitting active layers arranged to emit output light at a nominal vacuum wavelength λ 0 to propagate within the semiconductor diode structure, the front surface being characterized by a critical angle Θc at the nominal vacuum wavelength λ 0 ;
an anti-reflection coating on the front surface that is arranged so that the front surface exhibits reflectivity, for a range of internal incidence angles on the front surface less than Θc and at the nominal vacuum wavelength λ 0 , that is less than corresponding Fresnel reflectivity of the front surface without the anti-reflection coating; and
a redirection layer on the back surface that includes an array of nano-antennae that include one or more antenna materials, are shaped, sized, and spaced relative to the nominal vacuum wavelength λ 0 , and arranged along the redirection layer, so as to reradiate, upon irradiation by the output light at internal incidence angles on the back surface greater than Θc and at the nominal vacuum wavelength λ 0 , at least a portion of the output light to result collectively in redirection thereof to propagate toward the front surface within the range of internal incidence angles on the front surface less than Θc,
the semiconductor light-emitting device exhibiting a mean number of redirections per photon emitted by the active layer, by the redirection layer before exiting through the front surface, that is less than 30.
2. The device of claim 1 further comprising:
a transparent dielectric layer on a back surface of the redirection layer with the redirection layer between the dielectric layer and the back surface of the semiconductor diode structure, the dielectric layer being characterized by a refractive index lower than that of the semiconductor diode structure; and
a reflective layer on a back surface of the dielectric layer with the dielectric layer between the reflective layer and the back surface of the redirection layer.
3. The device of claim 2 , (i) the redirection layer exhibiting optical loss per pass for the output light incident thereon that is less than 10. %, or (ii) the reflective layer exhibiting reflectivity, at the nominal vacuum wavelength λ 0 , that is greater than 90. %.
4. The device of claim 1 , the redirection layer exhibiting optical loss per pass that is less than 20. % for the output light incident on the redirection layer.
5. The device of claim 1 , the reflectivity of the front surface with the anti-reflection coating being less than 10. %.
6. The device of claim 1 , the semiconductor light-emitting device exhibiting a photon extraction efficiency that is greater than 80. %.
7. A semiconductor light-emitting device comprising:
a semiconductor light-emitting diode structure having front and back surfaces and one or more light-emitting active layers arranged to emit output light at a nominal vacuum wavelength λ 0 to propagate within the semiconductor diode structure, the front surface being characterized by a critical angle Θc at the nominal vacuum wavelength λ 0 ;
an anti-reflection coating on the front surface that is arranged so that the front surface exhibits reflectivity, for a range of internal incidence angles on the front surface less than Θc and at the nominal vacuum wavelength λ 0 , that is less than corresponding Fresnel reflectivity of the front surface without the anti-reflection coating; and
a redirection layer on the back surface that includes a partial photonic bandgap structure or a photonic crystal and that is arranged with one or more materials, morphology or crystal morphology, and spacing or lattice spacing relative the nominal vacuum wavelength λ 0 , so as to redirect, upon irradiation by the output light at internal incidence angles on the back surface greater than Θc and at the nominal vacuum wavelength λ 0 , at least a portion of the output light to propagate toward the front surface within the range of internal incidence angles on the front surface less than Θc,
the semiconductor light-emitting device exhibiting a mean number of redirections per photon emitted by the active layer, by the redirection layer before exiting through the front surface, that is less than 30.
8. The device of claim 7 further comprising:
a transparent dielectric layer on a back surface of the redirection layer with the redirection layer between the dielectric layer and the back surface of the semiconductor diode structure, the dielectric layer being characterized by a refractive index lower than that of the semiconductor diode structure; and
a reflective layer on a back surface of the dielectric layer with the dielectric layer between the reflective layer and the back surface of the redirection layer.
9. The device of claim 8 , (i) the redirection layer exhibiting optical loss per pass for the output light incident thereon that is less than 10. %, or (ii) the reflective layer exhibiting reflectivity, at the nominal vacuum wavelength λ 0 , that is greater than 90. %.
10. The device of claim 7 , the redirection layer exhibiting optical loss per pass that is less than 20. % for the output light incident on the redirection layer.
11. The device of claim 7 , the reflectivity of the front surface with the anti-reflection coating being less than 10. %.
12. The device of claim 7 , the semiconductor light-emitting device exhibiting a photon extraction efficiency that is greater than 80. %.
13. The device of claim 7 , the redirection layer including the partial photonic bandgap structure arranged with the one or more materials, the morphology, and the spacing relative the nominal output vacuum wavelength λ 0 , so as to redirect, upon irradiation by the output light at the internal incidence angles on the back surface greater than Θc and at the nominal vacuum wavelength λ 0 , at least a portion of the output light to propagate toward the front surface within the range of internal incidence angles on the front surface less than Θc.
14. The device of claim 7 , the redirection layer including the photonic crystal arranged with the one or more materials, the crystal morphology, and the lattice spacing relative the nominal output vacuum wavelength λ 0 , so as to redirect, upon irradiation by the output light at the internal incidence angles on the back surface greater than Θc and at the nominal vacuum wavelength λ 0 , at least a portion of the output light to propagate toward the front surface within the range of internal incidence angles on the front surface less than Θc.
15. A semiconductor light-emitting device comprising:
a semiconductor light-emitting diode structure having front and back surfaces and one or more light-emitting active layers arranged to emit output light at a nominal vacuum wavelength λ 0 to propagate within the semiconductor diode structure, the front surface being characterized by a critical angle Θc at the nominal vacuum wavelength λ 0 ;
an anti-reflection coating on the front surface that is arranged so that the front surface exhibits reflectivity, for a range of internal incidence angles on the front surface less than Θc and at the nominal vacuum wavelength λ 0 , that is less than corresponding Fresnel reflectivity of the front surface without the anti-reflection coating; and
a redirection layer on the back surface that includes an array of meta-atoms or meta-molecules that include one or more meta-materials, are shaped, sized, and spaced relative to the nominal vacuum wavelength λ 0 , and arranged along the redirection layer, so as to reradiate, upon irradiation by the output light at internal incidence angles on the back surface greater than Θc and at the nominal vacuum wavelength λ 0 , at least a portion of the output light to result collectively in redirection thereof to propagate toward the front surface within the range of internal incidence angles on the front surface less than Θc,
the semiconductor light-emitting device exhibiting a mean number of redirections per photon emitted by the active layer, by the redirection layer before exiting through the front surface, that is less than 30.
16. The device of claim 15 further comprising:
a transparent dielectric layer on a back surface of the redirection layer with the redirection layer between the dielectric layer and the back surface of the semiconductor diode structure, the dielectric layer being characterized by a refractive index lower than that of the semiconductor diode structure; and
a reflective layer on a back surface of the dielectric layer with the dielectric layer between the reflective layer and the back surface of the redirection layer.
17. The device of claim 16 , (i) the redirection layer exhibiting optical loss per pass for the output light incident thereon that is less than 10. %, or (ii) the reflective layer exhibiting reflectivity, at the nominal vacuum wavelength λ 0 , that is greater than 90. %.
18. The device of claim 15 , the redirection layer exhibiting optical loss per pass that is less than 20. % for the output light incident on the redirection layer.
19. The device of claim 15 , the reflectivity of the front surface with the anti-reflection coating being less than 10. %.
20. The device of claim 15 , the semiconductor light-emitting device exhibiting a photon extraction efficiency that is greater than 80. %.