IP Library Granted Patent US 11,980,889
Granted Patent B2
US 11,980,889 · App. 18/137,776 · Granted May 14, 2024

Microfluidic chip, head, and dispensing device for dispensing fluids containing an acidic component

Inventors: David L. Bernard (Lexington, KY); Sean T. Weaver (Florence, KY)
Assignee: FUNAI ELECTRIC CO., LTD.
B01L3/52B01L3/502707B01L2200/12B01L2200/16B01L2300/06B01L2300/0819B01L2300/0858B01L2300/12
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Quick Facts
Patent No.
US 11,980,889
App. No.
18/137,776
Granted
May 14, 2024
Kind
B2
Abstract

A method of generating a microfluidic ejection chip is provided. The method includes creating an opening in a silicon substrate through multiple iterations of a deep reactive ion etching process, forming a passivation layer over any exposed portion of silicon at the opening following each iteration of the deep reactive ion etching of the silicon substrate, and not removing the passivation layer at a conclusion of the etching of the silicon substrate to define a fluid passageway at the opening in the silicon substrate, such that the passivation layer is permanent on the silicon substrate at the opening.

Claims (11)

1. A method of generating a microfluidic ejection chip, comprising:

creating an opening in a silicon substrate through multiple iterations of a deep reactive ion etching process;

forming a passivation layer over any exposed portion of silicon at the opening following each iteration of the deep reactive ion etching of the silicon substrate;

not removing the passivation layer at a conclusion of the etching of the silicon substrate to define a fluid passageway at the opening in the silicon substrate, such that the passivation layer is permanent on the silicon substrate at the opening;

depositing an operational layer including fluid ejection elements on the silicon substrate, a device surface having conductive and insulative features, and a flow feature layer; and

applying a resist layer over the flow feature layer.

2. The method of claim 1 , wherein the fluid passageway is defined by a silicon sidewall of the silicon substrate that is entirely covered by the passivation layer to protect the silicon sidewall from exposure to an acidic fluid.

3. The method of claim 2 , wherein the acidic fluid is a reagent having a content of hydrofluoric acid/nitric acid (HF/HNO 3 ), Ethylenediamine pyrocatechol (EDP), Potassium hydroxide/Isopropyl alcohol (KOH/IPA), or Tetramethylammonium hydroxide (TMAH).

4. The method of claim 1 , wherein the passivation layer is a fluorocarbon layer.

5. The method of claim 1 , wherein the passivation layer is formed at the opening over any exposed portion of silicon using disposition of C 4 F 8 gas.

6. The method of claim 1 , wherein the passivation layer extends continuously around a perimeter of the fluid passageway.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 3, 2025
From: FUNAI ELECTRIC CO., LTD.
To: BRADY WORLDWIDE, INC.
Reel/Frame 070724/0640 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 26, 2023
From: FUNAI ELECTRIC HOLDINGS CO., LTD.
To: FUNAI ELECTRIC CO., LTD.
Reel/Frame 064093/0487 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 063815 FRAME: 0716. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME. Recorded Jun 2, 2023
From: FUNAI ELECTRIC CO., LTD.
To: FUNAI ELECTRIC HOLDINGS CO., LTD.
Reel/Frame 063843/0907 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 31, 2023
From: FUNAI ELECTRIC CO., LTD.
To: FUNAI ELECTRIC HOLDINGS CO., LTD.
Reel/Frame 063815/0716 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 21, 2023
From: BERNARD, DAVID L.; WEAVER, SEAN T.
To: FUNAI ELECTRIC CO., LTD.
Reel/Frame 063425/0235 →