Cleaning compositions
View Patent ↗This disclosure relates to compositions for cleaning post etching residues on a semiconductor substrate, as well as related cleaning methods.
1 . A cleaning method, comprising:
treating a substrate with a cleaning composition to obtain a treated substrate, the cleaning composition comprising at least one redox agent, at least one chelating agent, at least one organic solvent, at least one alkanolamine, and water; wherein the composition has a pH from about 12 to about 14; and
sonicating the treated substrate in the presence of a first rinse solvent to obtain a cleaned substrate.
2 . The method of claim 1 , wherein the substrate is an extreme ultraviolet (EUV) photomask.
3 . The method of claim 2 , wherein the extreme ultraviolet (EUV) photomask comprises a low thermal expansion material, TaON, TaN, Ru, RuN, Si, SiO 2 , SiON, Ti, TiN, Cr, CrN, or Mo.
4 . The method of claim 1 , wherein the treating step is performed at a temperature of from about 55° C. to about 75° C.
5 . The method of claim 1 , wherein the treated substrate is immersed in the first rinse solvent in the sonicating step.
6 . The method of claim 1 , wherein the first rinse solvent comprises water.
7 . The method of claim 1 , wherein the sonicating step is performed at a temperature of from about 40° C. to about 60° C.
8 . The method of claim 1 , further comprising sonicating the treated substrate in the presence of a second rinse solvent.
9 . The method of claim 8 , wherein the second rinse solvent is isopropanol.
10 . The method of claim 1 , further comprising drying the cleaned substrate.