IP Library Granted Patent US 12,266,549
Granted Patent B2
US 12,266,549 · App. 18/141,903 · Granted Apr 1, 2025

Fluid supply nozzle for semiconductor substrate treatment and semiconductor substrate treatment apparatus having the same

Inventors: Tae Woo Kim (Hwaseong-si, KR); Sang Su Lee (Osan-si, KR); Jae Hoon Hwang (Yongin-si, KR)
Assignee: APET CO., LTD.
H01L21/6715H01L21/68764
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Quick Facts
Patent No.
US 12,266,549
App. No.
18/141,903
Granted
Apr 1, 2025
Kind
B2
Abstract

A fluid supply nozzle for semiconductor substrate treatment, which supplies a treatment liquid in which a plurality of solutions are mixed to a semiconductor substrate, includes a nozzle body configured to mix the plurality of solutions to form a treatment liquid when the plurality of solutions are supplied into an inner space of the nozzle body, the nozzle body having a shape with an open upper portion, a solution supply channel with a plurality of solution supply pipes for supplying the plurality of solutions to the inner space, a solution guide device configured to guide the plurality of solutions and generate a rotary current or an eddy current to mix the plurality of solutions, and a rotary cartridge configured to accelerate the mixing of the plurality of solutions to generate a homogeneous treatment liquid.

Claims (24)

1. A fluid supply spray nozzle for semiconductor substrate treatment, which supplies a treatment liquid in which a plurality of solutions are mixed to a semiconductor substrate, the fluid supply nozzle comprising:

a nozzle body configured to mix the plurality of solutions to form a treatment liquid when the plurality of solutions are supplied into an inner space, the nozzle body having a shape with an open upper portion;

a solution supply channel with a plurality of solution supply pipes for supplying the plurality of solutions to the inner space;

a solution guide device comprising a plurality of screw threads configured to form flow paths through which the plurality of solutions flow together with wall surfaces of the inner space, and configured to guide the plurality of solutions and generate a rotary current or an eddy current to mix the plurality of solutions; and

a rotary cartridge configured to accelerate the mixing of the plurality of solutions to generate a homogeneous treatment liquid after the plurality of solutions are flowed through the flow paths formed by the screw threads, wherein the solution guide device comprises: a cover part configured to open or close the open upper portion of the nozzle body,

wherein the rotary cartridge comprises:

a rotary shaft having an upper portion rotatably fixed to the cover part of the solution guide device; and

at least one first blade and at least one second blade which are spaced apart from each other in a longitudinal direction of the rotary shaft, and

the rotary cartridge is replaceably provided in the nozzle body,

wherein the nozzle body comprises a discharge port for discharging the treatment liquid directly to the semiconductor substrate, and

wherein the discharge port is provided at a bottom of the nozzle body.

2. The fluid supply spray nozzle of claim 1 , wherein the solution guide device comprises:

a plurality of supply pipe guide parts each corresponding to one of the plurality of solution supply pipes; and

a plurality of solution outlets configured to discharge the plurality of solutions supplied from the plurality of supply pipe guide parts to the flow paths formed by the plurality of screw threads and the wall surfaces of the inner space.

3. The fluid supply spray nozzle of claim 2 , wherein the plurality of screw threads are tilted in a height direction of the nozzle body to generate a rotary current or an eddy current of the plurality of solutions discharged from the flow paths.

4. The fluid supply spray nozzle of claim 2 , wherein an upper surface of the first blade is tilted in a height direction of the nozzle body, and

an upper surface of the second blade is perpendicular to or tilted in the height direction of the nozzle body.

5. The fluid supply spray nozzle of claim 2 , further comprising a pipe conduit fixing device configured to fix the plurality of solution supply pipes to the plurality of supply pipe guide parts.

6. The fluid supply spray nozzle of claim 1 , wherein the treatment liquid is a treatment liquid for a hot sulfuric peroxide mixture (SPM) and comprises sulfuric acid and hydrogen peroxide.

7. A semiconductor substrate treatment apparatus comprising:

a rotary table providing a space in which a semiconductor substrate is mounted;

a housing providing a space in which the rotary table is installed; and

the fluid supply spray nozzle for semiconductor substrate treatment of claim 1 ,

wherein the fluid supply spray nozzle for semiconductor substrate treatment supplies a treatment liquid to the semiconductor substrate, and is provided in a part of the housing.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 13, 2023
From: KIM, TAE WOO; LEE, SANG SU; HWANG, JAE HOON
To: APET CO., LTD.
Reel/Frame 063635/0577 →
Priority Claims (1)
KR 10-2022-0058434 · May 12, 2022 · national
Continuity (1)
Related Publication 20230369080A1 · Nov 16, 2023
References Cited (56)
US 8673110B2 · Park et al. · 2014 [cited by applicant]
US 9142433B2 · Miyagi et al. · 2015 [cited by applicant]
US 9324602B2 · Shinohara et al. · 2016 [cited by applicant]
US 9403187B2 · Negoro et al. · 2016 [cited by applicant]
US 9768010B2 · Ito et al. · 2017 [cited by applicant]
US 10464107B2 · Iwata et al. · 2019 [cited by applicant]
US 10622242B2 · Muramoto · 2020 [cited by applicant]
US 10700166B2 · Kai et al. · 2020 [cited by applicant]
US 10755952B2 · Sasagawa et al. · 2020 [cited by applicant]
US 20130051967A1 · Muramoto · 2013 [cited by applicant]
US 20160240400A1 · Takahashi · 2016 [cited by examiner]
US 20180090306A1 · Higashijima et al. · 2018 [cited by applicant]
CN 215354918U · 2021 [cited by examiner]
JP H10151422A · 2003 [cited by examiner]
JP 2004327674A · 2004 [cited by applicant]
JP 2009079254A · 2009 [cited by applicant]
JP 2009231466A · 2009 [cited by applicant]
JP 4630881B2 · 2011 [cited by examiner]
JP 5877016B2 · 2016 [cited by applicant]
JP 5993625B2 · 2016 [cited by applicant]
JP 6068181B2 · 2017 [cited by applicant]
JP 7061439B2 · 2022 [cited by applicant]
KR 1020070118320A · 2007 [cited by applicant]
KR 101042539B1 · 2011 [cited by applicant]
KR 101068872B1 · 2011 [cited by applicant]
KR 101109071B1 · 2012 [cited by applicant]
KR 1020120009712A · 2012 [cited by applicant]
KR 101344930B1 · 2013 [cited by applicant]
KR 101384477B1 · 2014 [cited by applicant]
KR 101439742B1 · 2014 [cited by applicant]
KR 101450965B1 · 2014 [cited by applicant]
KR 1020160136124 · 2016 [cited by applicant]
KR 101685159B1 · 2016 [cited by examiner]
KR 1020170014776A · 2017 [cited by applicant]
KR 101751568B1 · 2017 [cited by applicant]
KR 101770880B1 · 2017 [cited by applicant]
KR 1020170110440A · 2017 [cited by applicant]
KR 101833684B1 · 2018 [cited by applicant]
KR 101891128 · 2018 [cited by applicant]
KR 101914681B1 · 2018 [cited by applicant]
KR 101910803B1 · 2019 [cited by applicant]
KR 101944147B1 · 2019 [cited by applicant]
KR 101964204B1 · 2019 [cited by applicant]
KR 101966805B1 · 2019 [cited by applicant]
KR 102073822B1 · 2020 [cited by applicant]
KR 102223259B1 · 2021 [cited by applicant]
KR 102418934B1 · 2022 [cited by applicant]
KR 102432448B1 · 2022 [cited by applicant]
TW 201939602A · 2019 [cited by applicant]
TW I710408B · 2020 [cited by applicant]
KR 101685159 B1 Written Description (Year: 2016). [cited by examiner]
JP-4630881-B2 Written Description (Year: 2011). [cited by examiner]
JP H10151422 A Written Description (Year: 2003). [cited by examiner]
CN215354918U Written Description (Year: 2021). [cited by examiner]
Korean Notice of Allowance dated Aug. 24, 2023 issued in corresponding Korean Patent Application No. (12 pages, including 6 pages English translation). [cited by applicant]
Office Action dated Oct. 26, 2023 issued for the counterpart Taiwan Patent Application No. 112116992, including English translation, 8pp. [cited by applicant]