Transistor level interconnection methodologies utilizing 3D interconnects
A microelectronic unit may include an epitaxial silicon layer having a source and a drain, a buried oxide layer beneath the epitaxial silicon layer, an ohmic contact extending through the buried oxide layer, a dielectric layer beneath the buried oxide layer, and a conductive element extending through the dielectric layer. The source and the drain may be doped portions of the epitaxial silicon layer. The ohmic contact may be coupled to a lower surface of one of the source or the drain. The conductive element may be coupled to a lower surface of the ohmic contact. A portion of the conductive element may be exposed at the second dielectric surface of the dielectric layer. The second dielectric surface may be directly bonded to an external component to form a microelectronic assembly.
1. An integrated circuit device, comprising:
a silicon layer having formed therein a source region and a drain region of a transistor;
a gate of the transistor and one or more interconnect layers formed over a top side of the silicon layer; and a conductive interconnect structure formed through one or more dielectric layers formed over a bottom side of the silicon layer opposite the top side, wherein one end of the conductive interconnect structure is electrically connected to a bottom surface of one of the source and drain regions through an Ohmic contact, and wherein the other end of the conductive interconnect structure comprises a terminal portion having an exposed surface configured for bonding to an external component, wherein the terminal portion of the conductive interconnect structure comprises a rigid conductive post extending below the one or more dielectric layers.
2. The integrated circuit device of claim 1 , wherein a bottom surface of the integrated circuit device includes the exposed surface of the conductive interconnect structure and further includes exposed dielectric surface regions such that the bottom surface of the integrated circuit device is configured for hybrid direct bonding to the external component.
3. The integrated circuit device of claim 2 , wherein the conductive interconnect structure is configured to electrically connect to the transistor for externally driving the one of the source and drain regions using driver circuitry in the external component.
4. The integrated circuit device of claim 1 , wherein the source and drain regions have a vertical depth extending across an entire thickness of the silicon layer.
5. The integrated circuit device of claim 1 , wherein the silicon layer is fully depleted.
6. The integrated circuit device of claim 1 , wherein the silicon layer is a silicon layer of a silicon-on-insulator (SOI) substrate, and wherein the one or more dielectric layers comprise a buried oxide layer of the SOI substrate from which a bulk substrate material has been removed.