Bonded structures with integrated passive component
In various embodiments, a bonded structure is disclosed. The bonded structure can include an element and a passive electronic component having a first surface bonded to the element and a second surface opposite the first surface. The passive electronic component can comprise a first anode terminal bonded to a corresponding second anode terminal of the element and a first cathode terminal bonded to a corresponding second cathode terminal of the element. The first anode terminal and the first cathode terminal can be disposed on the first surface of the passive electronic component.
1. A bonded structure comprising:
an integrated device die comprising a first surface comprising a first non-conductive region and a first plurality of conductive regions; and
a passive electronic component comprising:
a second surface directly hybrid bonded to the first surface, such that a second non-conductive region of the second surface is directly bonded to the first non-conductive region without an intervening adhesive and a second plurality of conductive regions is directly bonded to the first plurality of conductive regions without an intervening adhesive; and
a plurality of capacitors electrically connected to at least some of the second plurality of conductive regions, wherein the capacitors of the passive electronic component form part of a power delivery network for the integrated device die.
2. The bonded structure of claim 1 , wherein the plurality of capacitors of the passive electronic component improve the stability of the power supply to the integrated device die.
3. The bonded structure of claim 1 , wherein the passive electronic component reduces impedance at frequencies above 500 MHz, as compared to a configuration in which the integrated device die and the passive electronic component are not directly bonded.
4. The bonded structure of claim 1 , wherein the plurality of capacitors of the passive electronic component are not separated from the integrated device die by any standoff.
5. The bonded structure of claim 1 , further comprising a redistribution layer between the plurality of capacitors and the second plurality of conductive regions.
6. The bonded structure of claim 1 , wherein the plurality of capacitors have electrode surfaces that are generally perpendicular to the second surface.
7. The bonded structure of claim 1 , wherein the second surface of the passive electronic component covers the entirety of the first surface of the integrated device die.
8. The bonded structure of claim 1 , wherein the hybrid bonded integrated device die and passive electronic component are both singulated from a wafer-to-wafer bond.
9. The bonded structure of claim 1 , wherein sidewalls of the integrated device die and passive electronic component are aligned in a manner characteristic of singulation after bonding.
10. The bonded structure of claim 1 , wherein the passive electronic component comprises materials having a dielectric constant greater than 5.
11. The bonded structure of claim 10 , wherein the passive electronic component comprises materials having a dielectric constant greater than 20.
12. The bonded structure of claim 1 , wherein the passive electronic component includes an array of capacitive cells having an effective capacitance per unit area of at least 5 nF/mm 2 .
13. The bonded structure of claim 12 , wherein the effective capacitance per unit area is at least 50 nF/mm 2 .
14. The bonded structure of claim 12 , wherein the effective capacitance per unit area is at least 100 nF/mm 2 .
15. The bonded structure of claim 12 , wherein the effective capacitance per unit area is at least 200 nF/mm 2 .
16. The bonded structure of claim 1 , wherein the passive electronic component further includes vias providing signals separate from the power delivery network to the integrated device die.
17. The bonded structure of claim 1 , wherein the integrated device die comprises a processor.
18. The bonded structure of claim 1 , wherein the integrated device die further comprises a substrate and a plurality of active devices on the same side of the substrate as the first surface.
19. A bonded structure comprising:
an integrated device die comprising a first surface comprising a first non-conductive region and a first plurality of conductive regions; and
an electronic component comprising:
a second surface directly hybrid bonded to the first surface, such that a second non-conductive region of the second surface is directly bonded to the first non-conductive region without an intervening adhesive and a second plurality of conductive regions is directly bonded to the first plurality of conductive regions without an intervening adhesive; and
a plurality of capacitors electrically connected to at least some of second plurality of conductive regions, wherein the capacitors filter a component of a power signal delivered to the integrated device die.
20. The bonded structure of claim 19 , wherein the plurality of capacitors cover at least 55% of an active surface of the integrated device die.
21. The bonded structure of claim 20 , wherein the plurality of capacitors cover at least 75% of an active surface of the integrated device die.
22. The bonded structure of claim 19 , wherein the plurality of capacitors filter out DC components of signals provided to the integrated device die.
23. The bonded structure of claim 19 , wherein the plurality of capacitors are deep trench capacitors.
24. The bonded structure of claim 19 , wherein the electronic component comprises materials having a dielectric constant greater than 5.
25. The bonded structure of claim 24 , wherein the materials have a dielectric constant greater than 20.
26. The bonded structure of claim 25 , wherein the materials have a dielectric constant greater than 100.
27. The bonded structure of claim 19 , wherein the electronic component further comprises vias to allow electrical communication through the electronic component.
28. The bonded structure of claim 27 , wherein the vias provide signals to the integrated device die separate from the power signal.
29. The bonded structure of claim 19 , wherein the first surface is on a front side of the integrated device die.
30. The bonded structure of claim 19 , wherein the first surface is on a back side of the integrated device die.
31. The bonded structure of claim 30 , wherein the integrated device die comprises one or more vias electrically connecting at least one of the first plurality of conductive regions to a device on a front side of the integrated device die.