Method of manufacturing display device
According to one embodiment, a method of manufacturing a display device includes preparing a processing substrate with a lower electrode, a rib, and a partition including a lower portion and an upper portion, forming a first organic layer and a second organic layer spaced apart from the first organic layer, forming a first upper electrode and a second upper electrode spaced apart from the first upper electrode, forming a sealing layer located on the first upper electrode and the second upper electrode, forming a resist covering a part of the sealing layer, performing anisotropic dry etching using the resist as a mask, performing isotropic dry etching using the resist as a mask, and removing the sealing layer exposed from the resist.
1 . A method of manufacturing a display device, comprising:
preparing a processing substrate in which a lower electrode, a rib having an aperture overlapping the lower electrode, and a partition including a lower portion disposed on the rib and an upper portion disposed on the lower portion and protruding from a side surface of the lower portion are formed above a substrate;
forming a first organic layer covering the lower electrode and a second organic layer spaced apart from the first organic layer and located on the upper portion;
forming a first upper electrode covering the first organic layer and in contact with the lower portion, and a second upper electrode spaced apart from the first upper electrode and located on the second organic layer;
forming a sealing layer located on the first upper electrode and the second upper electrode;
forming a resist covering a part of the sealing layer;
performing anisotropic dry etching using the resist as a mask to reduce thickness of the sealing layer exposed from the resist; and
performing isotropic dry etching using the resist as a mask to remove the sealing layer exposed from the resist.
2 . The method of manufacturing a display device of claim 1 , wherein before the anisotropic dry etching is performed, the thickness of the sealing layer between the upper portion and the resist is greater than a thickness of the lower portion.
3 . The method of manufacturing a display device of claim 1 , wherein before the anisotropic dry etching is performed, a width of the resist directly above the upper portion is greater than a width of the upper portion protruding from the side surface and smaller than a total width of the upper portion.
4 . The method of manufacturing a display device of claim 3 , wherein the width of the resist is 1 μm or more.
5 . The method of manufacturing a display device of claim 1 , wherein the anisotropic dry etching is performed for a predetermined time, and
the isotropic dry etching is performed until an endpoint is detected.
6 . The method of manufacturing a display device of claim 5 , wherein an isotropic dry etching process time is shorter than an anisotropic dry etching process time.
7 . The method of manufacturing a display device of claim 1 , wherein pressure in a chamber in which the anisotropic dry etching is performed is smaller than pressure in a chamber in which the isotropic dry etching is performed.
8 . The method of manufacturing a display device of claim 1 , wherein bias power of a stage in which the processing substrate is disposed when performing the anisotropic dry etching is greater than bias power of a stage in which the processing substrate is disposed when performing the isotropic dry etching.
9 . The method of manufacturing a display device of claim 1 , wherein a flow rate of fluorine-based gas introduced into the chamber for performing the anisotropic dry etching is smaller than a flow rate of fluorine-based gas introduced into the chamber for performing the isotropic dry etching.
10 . The method of manufacturing a display device of claim 1 , further comprising, prior to forming the sealing layer, forming a first cap layer located on the first upper electrode and a second cap layer spaced apart from the first cap layer and located on the second upper electrode.
11 . The method of manufacturing a display device of claim 10 , further comprising, after removing the sealing layer, performing etching using the resist as a mask to remove a part of the second cap layer, a part of the second upper electrode, and a part of the second organic layer.