Multi-component device and method of making a multi-component device
A device includes a ceramic substrate formed of a first material, a polishable layer formed of a different material, and an interface between the ceramic substrate and the polishable layer. The interface is formed by infiltration of molten elemental silicon, and bonds the ceramic substrate and the polishable layer together. The device may include an optical device such as, for example, mirror or a beam dump. A method of making a device from a green-state structure and a polishable layer is also disclosed. The method includes infiltrating elemental silicon into and through the green-state structure, to form a substrate of a multi-phase ceramic material from the green-state structure, and to reactively bond the substrate and the polishable layer together.
1. A multi-component device, comprising:
a ceramic substrate formed of a multi-phase first material comprising silicon carbide particles, reaction-bonded silicon carbide, and residual elemental silicon;
a single-phase polishable layer formed of a second material different from the first material, and wherein the polishable layer and the ceramic substrate have well-matched coefficients of thermal expansion (CTEs); and
an interface bonding the ceramic substrate and the single-phase polishable layer together, being formed by infiltrating elemental silicon.
2. The multi-component device of claim 1 , wherein the ceramic substrate includes reaction-bonded silicon-carbide (RB-SiC).
3. The multi-component device of claim 1 , wherein the polishable layer includes chemical-vapor-deposited silicon carbide (CVD-SiC).
4. The multi-component device of claim 1 , wherein the polishable layer includes single-crystal silicon-carbide (Xtal-SiC).
5. An optical device, comprising the multi-component device of claim 1 , wherein the polishable layer has a polishable surface facing away from the ceramic substrate.
6. The optical device of claim 5 , wherein the polishable surface is polished to reflect light.
7. The optical device of claim 5 , wherein the optical device includes a light-absorbing beam dump.
8. The optical device of claim 5 , wherein the ceramic substrate includes reaction-bonded silicon-carbide (RB-SiC).
9. The optical device of claim 8 , wherein the polishable layer includes chemical-vapor-deposited silicon carbide (CVD-SiC).
10. The optical device of claim 8 , wherein the polishable layer includes single-crystal silicon-carbide (Xtal-SiC).
11. The multicomponent device of claim 1 , wherein the difference in CTE between the polishable layer and ceramic substrate is less than 2.0 ppm/° C.
12. The multicomponent device of claim 1 , wherein the difference in CTE between the polishable layer and ceramic substrate is less than 0.2 ppm/° C.
13. The multicomponent device of claim 1 , wherein the polishable layer is made of aluminum nitride (AIN), diamond, or a single crystal silicon carbide of any suitable allotrope or crystallographic orientation.
14. The multicomponent device of claim 1 , wherein the substrate is formed from a green-state structure.
15. The multicomponent device of claim 14 , wherein the green-state structure comprises pores.
16. The multicomponent device of claim 1 , wherein the elemental silicon bonds the substrate and the polishable layer together.
17. The multicomponent device of claim 1 , wherein the interface comprises reaction-boded silicon-carbide bonding the ceramic substrate and the polishable layer together.
18. The multicomponent device of claim 1 , wherein the polishable layer is reaction bonded to the ceramic substrate.