Method of manufacturing display device
According to one embodiment, a method of manufacturing a display device, includes forming a first thin film including a first light-emitting layer over a first subpixel, a second subpixel, and a third subpixel, removing the first thin film of the second subpixel, forming a second thin film including a second light-emitting layer over the first subpixel, the second subpixel, and the third subpixel, removing the second thin film of the first subpixel and the third subpixel, removing the first thin film of the third subpixel, forming a third thin film including a third light-emitting layer over the first subpixel, the second subpixel, and the third subpixel, and removing the third thin film of the first subpixel and the second subpixel.
1. A method of manufacturing a display device, comprising:
preparing a processing substrate comprising a first subpixel, a second subpixel, and a third subpixel;
forming a first thin film including a first light-emitting layer over the first subpixel, the second subpixel, and the third subpixel;
forming a first resist which exposes the first thin film of the second subpixel and which covers the first thin film of the first subpixel and the third subpixel;
removing the first thin film of the second subpixel with the first resist used as a mask;
removing the first resist;
forming a second thin film including a second light-emitting layer over the first subpixel, the second subpixel, and the third subpixel;
forming a second resist which exposes the second thin film of the first subpixel and the third subpixel and which covers the second thin film of the second subpixel;
removing the second thin film of the first subpixel and the third subpixel with the second resist used as a mask;
removing the second resist;
forming a third resist which exposes the first thin film of the third subpixel and which covers the first thin film of the first subpixel and the second thin film of the second subpixel;
removing the first thin film of the third subpixel with the third resist used as a mask;
removing the third resist;
forming a third thin film including a third light-emitting layer over the first subpixel, the second subpixel, and the third subpixel;
forming a fourth resist which exposes the third thin film of the first subpixel and the second subpixel and which covers the third thin film of the third subpixel;
removing the third thin film of the first subpixel and the second subpixel with the fourth resist used as a mask; and
removing the fourth resist.
2. The method of manufacturing the display device of claim 1 , wherein the preparing of the processing substrate comprises:
forming a first lower electrode of the first subpixel, a second lower electrode of the second subpixel, and a third lower electrode of the third subpixel above a substrate;
forming a rib comprising apertures which overlap the first lower electrode, the second lower electrode, and the third lower electrode, respectively; and
forming a partition including a lower portion which is disposed on the rib and an upper portion which is disposed on the lower portion and which projects from a side surface of the lower portion.
3. The method of manufacturing the display device of claim 2 , wherein the rib is formed of an inorganic material.
4. The method of manufacturing the display device of claim 2 , wherein the lower portion of the partition is formed of a conductive material.
5. The method of manufacturing the display device of claim 2 , wherein the forming of the first thin film comprises:
forming a first organic layer including the first light-emitting layer on the first lower electrode, the second lower electrode, and the third lower electrode;
forming a first upper electrode on the first organic layer;
forming a first cap layer on the first upper electrode; and
forming a first sealing layer on the first cap layer.
6. The method of manufacturing the display device of claim 5 , wherein the forming of the second thin film comprises:
forming a second organic layer including the second light-emitting layer on the second lower electrode and on the first sealing layer of the first subpixel and the third subpixel;
forming a second upper electrode on the second organic layer;
forming a second cap layer on the second upper electrode; and
forming a second sealing layer on the second cap layer.
7. The method of manufacturing the display device of claim 6 , wherein the forming of the third thin film comprises:
forming a third organic layer including the third light-emitting layer on the third lower electrode, on the first sealing layer of the first subpixel, and on the second sealing layer of the second subpixel;
forming a third upper electrode on the third organic layer;
forming a third cap layer on the third upper electrode; and
forming a third sealing layer on the third cap layer.
8. The method of manufacturing the display device of claim 7 , wherein the first sealing layer, the second sealing layer, and the third sealing layer are formed of the same inorganic materials.
9. The method of manufacturing the display device of claim 7 , wherein
the lower portion of the partition is formed of a conductive material, and
the first upper electrode, the second upper electrode, and the third upper electrode each contact the lower portion.
10. The method of manufacturing the display device of claim 1 , wherein the forming of the first thin film, the forming of the second thin film, and the forming of the third thin film each comprise:
forming an organic layer;
forming an upper electrode on the organic layer;
forming a cap layer on the upper electrode; and
forming a sealing layer on the cap layer.
11. The method of manufacturing the display device of claim 10 , wherein the sealing layer is formed of an inorganic material.