Monolithic segmented LED array architecture with islanded epitaxial growth
A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.
1. An LED array comprising:
a plurality of pixels, each pixel separated from an adjacent pixel by a trench extending from a p-type semiconductor layer to a distal surface of an n-type semiconductor layer;
an n-type contact in the trench;
the n-type semiconductor layer disposed on an active layer on the p-type semiconductor layer;
a wavelength converting layer on the n-type semiconductor layer on a surface opposite the active layer;
a p-type contact on the p-type semiconductor layer; and
one or more passivation layer extending from the p-type semiconductor layer to the n-type semiconductor layer and separating the n-type contact from the active layer and the p-type layer, the one or more passivation layer extending at least partially on a sidewall of the n-type semiconductor layer,
wherein at least part of the wavelength converting layer is separated by the n-type contact in the trench.
2. The LED array of claim 1 , wherein the n-type contact in the trench forms a protrusion separating the wavelength converting layer on each pixel.
3. The LED array of claim 1 , wherein the active layer comprises a partially doped or undoped Type III-nitride.
4. The LED array of claim 1 , wherein the n-type contact extends to the wavelength converting layer and provides at least partial optical isolation between each pixel.
5. The LED array of claim 1 , wherein the n-type layer and p-type layer are not continuous between the plurality of pixels.
6. An LED array comprising:
a plurality of pixels, each pixel separated from an adjacent pixel by a trench extending from a p-type semiconductor layer to a distal surface of an n-type semiconductor layer;
an n-type contact in the trench;
the n-type semiconductor layer disposed on an active layer on the p-type semiconductor layer;
a wavelength converting layer on the n-type semiconductor layer on a surface opposite the active layer;
a p-type contact on the p-type semiconductor layer; and
one or more passivation layer extending from the p-type semiconductor layer to the n-type semiconductor layer and separating the n-type contact from the active layer and the p-type layer, the one or more passivation layer extending at least partially on a sidewall of the n-type semiconductor layer,
wherein the n-type contact extends to the wavelength converting layer and provides at least partial optical isolation between each pixel.
7. The LED array of claim 6 , wherein at least part of the wavelength converting layer is separated by the n-type contact in the trench.
8. The LED array of claim 7 , wherein the n-type contact in the trench forms a protrusion separating the wavelength converting layer on each pixel.
9. The LED array of claim 6 , wherein the active layer comprises a partially doped or undoped Type III-nitride.
10. The LED array of claim 6 , wherein the n-type layer and p-type layer are not continuous between the plurality of pixels.