POST-PROCESSING OPTICAL LOSS RECOVERY METHODS
The disclosed method for recovering optical properties of transparent substrates may include performing a post-etching annealing process on a transparent substrate. The method may also include applying a plasma treatment to the transparent substrate, performing an atomic layer etching treatment on the transparent substrate, and/or performing a cleaning process. Various other methods, devices, and systems are also disclosed.
1 . A method for recovering optical properties of transparent substrates, the method comprising:
performing a post-etching annealing process on a transparent substrate.
2 . The method of claim 1 , further comprising:
applying a plasma treatment to the transparent substrate.
3 . The method of claim 2 , further comprising:
performing an atomic layer etching treatment on the transparent substrate.
4 . The method of claim 3 , further comprising subsequently performing a cleaning process.
5 . The method of claim 4 , further comprising subsequently applying a surface passivation layer to the transparent substrate.
6 . The method of claim 1 , wherein the post-etching annealing process comprises an oxidative annealing process.
7 . The method of claim 1 , wherein the post-etching annealing process comprises a reductive annealing process.
8 . The method of claim 1 , wherein the post-etching annealing process comprises an oxidative annealing process and a reductive annealing process in sequence.
9 . The method of claim 1 , further comprising subsequently performing a cleaning process.
10 . The method of claim 1 , further comprising subsequently applying a surface passivation layer to the transparent substrate.
11 . The method of claim 1 , wherein the post-etching annealing process is performed at or below 1600 degrees Celsius.
12 . The method of claim 1 , wherein the post-etching annealing process is performed at or below 1400 degrees Celsius.
13 . The method of claim 1 , wherein the post-etching annealing process is performed at or below 1200 degrees Celsius.
14 . The method of claim 1 , wherein:
the annealing process comprises use of a mixture of H 2 gas and at least one of Ar gas or N 2 gas, wherein the H 2 gas comprises about 10 percent or less of the mixture of gas by volume;
the annealing process is performed at about 1200 degrees Celsius or less; and
the annealing process is performed for about 3 hours or less.
15 . The method of claim 14 , further comprising a plasma treatment process, wherein:
the plasma treatment process comprises use of a plasma treatment mixture of H 2 gas and at least one of Ar gas or N 2 gas, wherein the H 2 gas comprises about 10 percent or less of the plasma treatment mixture of gas by volume;
the plasma treatment process is performed at about 500 degrees Celsius or less;
the plasma treatment process is performed for about 1 hour or less; and
the plasma treatment process is performed with a radiofrequency power of about 1 kilowatt or less.
16 . The method of claim 14 , further comprising an annealing process, wherein:
the annealing process comprises use of gas comprising at least in part O 2 ;
the annealing process is performed at about 1200 degrees Celsius or less; and
the annealing process is performed for about 3 hours or less.
17 . The method of claim 16 , wherein:
the annealing process is performed at about 500 degrees Celsius or less;
the annealing process is performed for about 1 hour or less; and
the annealing process is performed with radiofrequency power of about 1 kilowatt or less.
18 . The method of claim 14 , further comprising performing a wet cleaning process.
19 . A device comprising an etched transparent substrate modified with a post-etch annealing process.
20 . A system comprising a head-mounted display comprising a waveguide modified with a post-etch annealing process.