Patent Application

App. No. 18/164,070

Abstract

Claims (18)

1 . A method of forming a charge pattern on a microchip, comprising:

depositing a first material on an insulator surface of the microchip;

depositing a material having the capability of forming a self-assembled monolayer on the other material, wherein the material comprises at least one material selected from the group consisting of: octadecyltrichlorosilane, phenethyltrichlorosilane, hexamethyldisilazane, allyltrimethoxysilane, or perfluorooctyltrichlorosilane; and

patterning the self-assembled monolayer to reveal a portion of the first material.

2 . The method as claimed in claim 1 , wherein the first material comprises an oxide.

3 . The method as claimed in claim 1 wherein depositing the first material comprises:

first depositing an oxide on an insulator surface of the microchip; and

patterning a sacrificial blocking material onto a portion of the oxide as the first material; and

removing the sacrificial blocking material after depositing the self-assembled monolayer to reveal the oxide.

4 . The method as claimed in claim 3 , wherein the blocking material comprises photoresist.

5 . The method as claimed in claim 3 , wherein the method is performed at one of with the chiplet scale or the wafer scale.

6 . A method of forming a charge pattern in a microchip, comprising:

depositing a first material as one of either a solution processed material, or a vapor deposited material to generate a first polarity or first magnitude of charge;

depositing a second material as a vapor deposited material to generate a second polarity or second magnitude of charge; and

immersing the microchip in a non-polar fluid comprising one selected from the group consisting of: an isoparafinnic liquid, a hydrocarbon liquid and dodecane.

7 . The method as claimed in claim 6 , wherein depositing the first material comprises depositing a solution process material.

8 . The method as claimed in claim 6 , wherein depositing the first material comprises depositing a vapor deposited material.

9 . The method as claimed in claim 6 , wherein the first material comprises at least one selected from the group consisting of: polyethylene, polystyrene, polymethylmethacrylate, parylene, polyvinylalcohol, cationic and anionic polyelectrolytes, polystyrene-sulfonic acid, polyallylamine, polyacrylic acid, poly(diallyldimethylammonium chloride), organometallic salts, zinc stearate, aluminum stearate, silica oxide, alumina oxide, or titania oxide.

Assignments (8)