DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
According to one embodiment, a display device includes a lower electrode, a rib including an aperture, a partition on the rib, an upper electrode in contact with the partition, an organic layer between the lower electrode and the upper electrode, and a sealing layer on the upper electrode. The partition includes a lower portion provided on the rib, and an upper portion provided on the lower portion and including an end portion protruding from a side surface of the lower portion. The upper portion is formed of a material which has translucency and which is different from a material of the sealing layer.
1 . A display device comprising:
a lower electrode;
a rib which covers part of the lower electrode and comprises an aperture overlapping the lower electrode;
a partition provided on the rib;
an upper electrode which faces the lower electrode and is in contact with the partition;
an organic layer located between the lower electrode and the upper electrode and emitting light based on a potential difference between the lower electrode and the upper electrode; and
a sealing layer located on the upper electrode, wherein
the partition comprises a lower portion provided on the rib, and an upper portion provided on the lower portion and comprising an end portion protruding from a side surface of the lower portion, and
the upper portion is formed of a material which has translucency and which is different from a material of the sealing layer.
2 . The display device of claim 1 , wherein
the upper portion has translucency relative to light having a wavelength of 436 nm or light having a wavelength of 405 nm.
3 . The display device of claim 1 , wherein
the upper portion includes a first layer formed of silicon oxide and a second layer formed of conductive oxide.
4 . The display device of claim 3 , wherein
the second layer covers the first layer.
5 . The display device of claim 3 , wherein
the second layer is thinner than the first layer.
6 . The display device of claim 3 , wherein
the conductive oxide forming the second layer is ITO, IZO or IGZO.
7 . The display device of claim 1 , wherein
the upper portion comprises a single-layer structure of silicon oxide.
8 . The display device of claim 1 , wherein
the lower portion contains aluminum.
9 . The display device of claim 1 , wherein
the lower portion includes a barrier layer provided on the rib, and a metal layer provided on the barrier layer.
10 . The display device of claim 9 , wherein
the barrier layer is formed of one of molybdenum, molybdenum tungsten alloy and copper.
11 . The display device of claim 1 , wherein
the side surface of the lower portion comprises projections and depressions.
12 . The display device of claim 1 , wherein
the sealing layer is formed of silicon nitride.
13 . A manufacturing method of a display device, the method comprising:
forming a lower electrode;
forming a rib which covers at least part of the lower electrode;
forming a partition including a lower portion provided on the rib, and an upper portion having translucency and protruding from a side surface of the lower portion;
forming an organic layer on the lower electrode;
forming an upper electrode on the organic layer, the upper electrode being in contact with the partition;
forming a sealing layer on the upper electrode, the sealing layer being formed of a material different from a material of the upper portion;
forming a resist on the sealing layer;
exposing the resist;
removing an exposed portion of the resist; and
removing, of the organic layer, the upper electrode and the sealing layer, a portion exposed from the resist, by etching using the resist in which the exposed portion is removed as a mask.
14 . The manufacturing method of claim 13 , wherein
in the exposure of the resist, light having a wavelength of 436 nm or light having a wavelength of 405 nm is used, and
the upper portion has translucency relative to light having a wavelength of 436 nm or light having a wavelength of 405 nm.
15 . The manufacturing method of claim 13 , wherein
the upper portion includes a first layer formed of silicon oxide, and a second layer formed of conductive oxide.
16 . The manufacturing method of claim 13 , wherein
the upper portion comprises a single-layer structure of silicon oxide.
17 . The manufacturing method of claim 13 , wherein
the sealing layer is formed of silicon nitride.
18 . The manufacturing method of claim 13 , wherein
the forming the partition includes:
forming a metal layer on the rib;
forming the upper portion on the metal layer;
reducing a thickness of a first portion of the metal layer exposed from the upper portion by anisotropic etching; and
forming the lower portion by reducing a width of a second portion of the metal layer located under the upper portion by isotropic etching.