DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE

1 . A display device comprising:

a substrate;

a lower electrode provided above the substrate;

a rib formed of silicon oxide or silicon oxynitride and comprising an aperture overlapping the lower electrode;

a partition comprising a lower portion provided on the rib, and an upper portion provided on the lower portion and protruding from a side surface of the lower portion;

an organic layer comprising a first portion located on the lower electrode and spaced apart from the lower portion of the partition, and a second portion located on the upper portion, the first and second portions including light emitting layers formed of a same material;

an upper electrode comprising a first portion which is provided on the first portion of the organic layer and is in contact with the lower portion of the partition, and a second portion provided on the second portion of the organic layer;

a cap layer comprising a first portion provided on the first portion of the upper electrode, and a second portion provided on the second portion of the upper electrode; and

a sealing layer which covers the first and second portions of the cap layer.

2 . The display device of claim 1 , wherein

the sealing layer is formed of silicon nitride.

3 . The display device of claim 1 , wherein

a thickness of the rib is less than a thickness of the partition.

4 . The display device of claim 2 , wherein

a thickness of the rib is greater than or equal to 200 nm but less than or equal to 400 nm.

5 . A manufacturing method of a display device, the method comprising:

forming a lower electrode above a substrate;

forming a silicon oxide layer overlapping the lower electrode by providing a processing substrate in which the lower electrode is formed on a stage inside a chamber and introducing a gas mixture of silicon tetrahydride (SiH 4 ) and nitrous oxide (N 2 O) into the chamber;

forming a rib comprising an aperture overlapping the lower electrode by patterning the silicon oxide layer;

forming a partition comprising a lower portion located on the rib, and an upper portion located on the lower portion and protruding from a side surface of the lower portion;

forming an organic layer including a first organic layer located on the lower electrode and spaced apart from the lower portion of the partition, and a second organic layer located on the upper portion, the first and second organic layers including light emitting layers formed of a same material;

forming an upper electrode including a first upper electrode which is located on the first organic layer and is in contact with the lower portion of the partition, and a second upper electrode located on the second organic layer;

forming a cap layer including a first cap layer located on the first upper electrode, and a second cap layer located on the second upper electrode; and

forming a sealing layer which covers the first cap layer and the second cap layer.

6 . The manufacturing method of claim 5 , wherein

the sealing layer is formed of silicon nitride.

7 . The manufacturing method of claim 6 ,

further forming a resist on the sealing layer, and

performing dry etching using the resist as a mask to remove part of the sealing layer immediately above the upper portion.

8 . The manufacturing method of claim 7 ,

further performing etching using the resist as a mask to remove part of the second cap layer, part of the second upper electrode and part of the second organic layer.

9 . The manufacturing method of claim 5 , wherein

a thickness of the rib is greater than or equal to 200 nm but less than or equal to 400 nm.

10 . A manufacturing method of a display device, the method comprising:

forming a lower electrode above a substrate;

forming a silicon oxynitride layer overlapping the lower electrode by providing a processing substrate in which the lower electrode is formed on a stage inside a chamber and introducing a gas mixture of silicon tetrahydride (SiH 4 ), nitrous oxide (N 2 O) and nitrogen (N 2 ) into the chamber;

forming a rib comprising an aperture overlapping the lower electrode by patterning the silicon oxynitride layer;

forming a partition comprising a lower portion located on the rib, and an upper portion located on the lower portion and protruding from a side surface of the lower portion;

forming an organic layer including a first organic layer located on the lower electrode and spaced apart from the lower portion of the partition, and a second organic layer located on the upper portion, the first and second organic layers including light emitting layers formed of a same material;

forming an upper electrode including a first upper electrode which is located on the first organic layer and is in contact with the lower portion of the partition, and a second upper electrode located on the second organic layer;

forming a cap layer including a first cap layer located on the first upper electrode, and a second cap layer located on the second upper electrode; and

forming a sealing layer which covers the first cap layer and the second cap layer.

11 . The manufacturing method of claim 10 , wherein

the sealing layer is formed of silicon nitride.

12 . The manufacturing method of claim 11 ,

further forming a resist on the sealing layer, and

performing dry etching using the resist as a mask to remove part of the sealing layer immediately above the upper portion.

13 . The manufacturing method of claim 12 ,

further performing etching using the resist as a mask to remove part of the second cap layer, part of the second upper electrode and part of the second organic layer.

14 . The manufacturing method of claim 10 , wherein

a thickness of the rib is greater than or equal to 200 nm but less than or equal to 400 nm.