Manufacturing method of display device
According to one embodiment, a manufacturing method of a display device includes providing a processing substrate in which a lower electrode is formed on a stage inside a chamber, forming a first insulating layer overlapping the lower electrode in a state where a first distance is formed between the stage and a counter-electrode, and subsequently forming a second insulating layer on the first insulating layer in a state where a second distance greater than the first distance is formed between the stage and the counter-electrode, forming a rib by patterning the first insulating layer and the second insulating layer, forming a partition, forming an organic layer, forming an upper electrode, forming a cap layer, and forming a sealing layer.
1 . A manufacturing method of a display device, the method comprising:
forming a lower electrode above a substrate;
providing a processing substrate in which the lower electrode is formed, on a stage inside a chamber, forming a first insulating layer overlapping the lower electrode in a state where a first distance is formed between the stage and a counter-electrode, and subsequently forming a second insulating layer on the first insulating layer in a state where a second distance greater than the first distance is formed between the stage and the counter-electrode;
forming a rib comprising an aperture overlapping the lower electrode by patterning the first insulating layer and the second insulating layer;
forming a partition comprising a lower portion located on the rib, and an upper portion located on the lower portion and protruding from a side surface of the lower portion;
forming an organic layer including a first organic layer located on the lower electrode and spaced apart from the lower portion of the partition, and a second organic layer located on the upper portion, the first and second organic layers including light emitting layers formed of a same material;
forming an upper electrode including a first upper electrode which is located on the first organic layer and is in contact with the lower portion of the partition, and a second upper electrode located on the second organic layer;
forming a cap layer including a first cap layer located on the first upper electrode, and a second cap layer located on the second upper electrode; and
forming a sealing layer which covers the first cap layer and the second cap layer.
2 . The manufacturing method of claim 1 , wherein
a pressure inside the chamber in the state where the second distance is formed is higher than the pressure inside the chamber in the state where the first distance is formed.
3 . The manufacturing method of claim 1 , wherein
the state in which the first distance is formed is maintained for five seconds or more.
4 . The manufacturing method of claim 1 , wherein
the first distance is changed to the second distance in a state where a reactant gas is introduced into the chamber and voltage is applied to the counter-electrode.
5 . The manufacturing method of claim 1 , wherein
the first insulating layer and the second insulating layer are formed of silicon nitride.
6 . The manufacturing method of claim 5 , wherein
the sealing layer is formed of silicon nitride.
7 . The manufacturing method of claim 6 ,
further forming a resist on the sealing layer, and
performing dry etching using the resist as a mask to remove part of the sealing layer immediately above the upper portion.
8 . The manufacturing method of claim 7 ,
further performing etching using the resist as a mask to remove part of the second cap layer, part of the second upper electrode and part of the second organic layer.
9 . The manufacturing method of claim 1 , wherein
a thickness of the rib is greater than or equal to 200 nm but less than or equal to 400 nm.
10 . A manufacturing method of a display device, the method comprising:
forming a lower electrode above a substrate;
providing a processing substrate in which the lower electrode is formed, on a stage inside a chamber, applying voltage to a counter-electrode facing the stage, introducing a reactant gas into the chamber after an elapse of a predetermined time, and forming an insulating layer overlapping the lower electrode;
forming a rib comprising an aperture overlapping the lower electrode by patterning the insulating layer;
forming a partition comprising a lower portion located on the rib, and an upper portion located on the lower portion and protruding from a side surface of the lower portion;
forming an organic layer including a first organic layer located on the lower electrode and spaced apart from the lower portion of the partition, and a second organic layer located on the upper portion, the first and second organic layers including light emitting layers formed of a same material;
forming an upper electrode including a first upper electrode which is located on the first organic layer and is in contact with the lower portion of the partition, and a second upper electrode located on the second organic layer;
forming a cap layer including a first cap layer located on the first upper electrode, and a second cap layer located on the second upper electrode; and
forming a sealing layer which covers the first cap layer and the second cap layer.
11 . The manufacturing method of claim 10 , wherein
a time from start of application of voltage to the counter-electrode to start of introduction of the reactant gas is greater than or equal to five seconds.
12 . The manufacturing method of claim 10 , wherein
the insulating layer is formed of silicon nitride.
13 . The manufacturing method of claim 12 , wherein
the sealing layer is formed of silicon nitride.
14 . The manufacturing method of claim 13 ,
further forming a resist on the sealing layer, and
performing dry etching using the resist as a mask to remove part of the sealing layer immediately above the upper portion.
15 . The manufacturing method of claim 14 ,
further performing etching using the resist as a mask to remove part of the second cap layer, part of the second upper electrode and part of the second organic layer.
16 . The manufacturing method of claim 15 , wherein
a thickness of the rib is greater than or equal to 200 nm but less than or equal to 400 nm.