Solar cell and method for manufacturing the same
A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.
1. A solar cell, comprising:
a semiconductor substrate;
a tunnel layer on a first surface of the semiconductor substrate;
a first conductive type semiconductor region deposited on the tunnel layer;
an emitter region deposited on a second surface opposite to the first surface of the semiconductor substrate;
a first passivation film on the first conductive type semiconductor region; and
a first electrode connected to the first conductive type semiconductor region through an opening in the first passivation film, the first electrode including:
a plurality of first finger electrodes spaced apart from each other and extended in parallel in a first direction; and
a first bus bar connected to the plurality of first finger electrodes
wherein at least part of the first electrode is depressed and formed in the first conductive type semiconductor region, the first electrode includes a metal material and a glass frit, and an amount of glass frit per unit volume in the plurality of finger electrodes is less than an amount of glass frit per unit volume in the bus electrode.
2. The solar cell of claim 1 , wherein an amount of metal material per unit volume in the plurality of first finger electrodes is greater than an amount of metal material per unit volume in the first bus bar, the amount of metal material per unit volume in the plurality of first finger electrodes ranges from 80 wt % to 95 wt %, and amount of metal material per unit volume in the first bus bar ranges from 60 wt % to 80 wt %.
3. The solar cell of claim 1 , wherein the plurality of first finger electrodes have a single layer structure, and the first bus bar has a double layer structure.
4. The solar cell of claim 1 , wherein the first conductive type semiconductor region includes a polycrystalline silicon material, and the emitter region includes a single crystal silicon material.
5. The solar cell of claim 1 , wherein the first passivation film includes a side portion extended up to a top of a side of the semiconductor substrate.
6. The solar cell of claim 1 , further comprising:
a second passivation film on the emitter region;
an anti-reflection layer on the second passivation film; and
a second electrode connected to the emitter region through an opening in the second passivation film and the anti-reflection layer.
7. The solar cell of claim 6 , wherein at least part of the second electrode is depressed and formed in the emitter region.
8. The solar cell of claim 1 , further comprising:
a first boundary surface in which the first conductive type semiconductor region and the first electrode come into contact with each other; and
a second boundary surface in which the first conductive type semiconductor region and the first passivation film come into contact with each other,
wherein the first boundary surface is arranged closer to the semiconductor substrate than the second boundary surface.
9. The solar cell of claim 8 , wherein a difference between a height of the first boundary surface and a height of the second boundary surface ranges from 1 nm to 20 nm.
10. The solar cell of claim 1 , further comprising a plurality of metal crystals extracted from the first electrode and formed in an electrode forming region of the first conductive type semiconductor region in which the first electrode is formed.
11. The solar cell of claim 10 , wherein the plurality of metal crystals are not formed in a non-forming region which belongs to the first conductive type semiconductor region and in which the first electrode is not formed,
wherein the plurality of metal crystals are not in the tunnel layer, and
wherein the plurality of metal crystals are in direct contact with the first electrode.
12. The solar cell of claim 10 , wherein the plurality of metal crystals are not formed in a non-forming region which belongs to the first conductive type semiconductor region and in which the first electrode is not formed,
wherein the plurality of metal crystals are not in the tunnel layer, and
wherein the plurality of metal crystals are spaced apart from the first electrode.
13. The solar cell of claim 10 , wherein the plurality of first finger electrodes penetrate the first passivation film and are depressed into the first conductive type semiconductor region, and the first bus bar penetrates the first passivation film and is depressed into the first conductive type semiconductor region,
wherein the electrode forming region of the first conductive type semiconductor region includes a finger forming region and a bus bar forming region, and
wherein metal crystals extracted from the plurality of first finger electrodes are formed in the finger forming region, and metal crystals extracted from the first bus bar are formed in the bus bar forming region.
14. The solar cell of claim 10 , wherein the plurality of first finger electrodes penetrate the first passivation film and are depressed into the first conductive type semiconductor region, and the first bus bar does not penetrate the first passivation film but is formed on the first conductive type semiconductor region,
wherein the electrode forming region of the first conductive type semiconductor region includes a finger forming region, and
wherein the plurality of metal crystals is formed only in the finger forming region.
15. The solar cell of claim 10 , wherein the plurality of metal crystals include first metal crystals in a direct contact with the first electrode and second metal crystals spaced apart from the first electrode.
16. The solar cell of claim 10 , wherein a length of the plurality of metal crystals in a direction from the first electrode to the tunnel layer is ⅔ or less of a thickness of the first conductive type semiconductor region.