DISPLAY DEVICE MANUFACTURING METHOD AND DISPLAY DEVICE

1 . A display device manufacturing method comprising:

forming a lower electrode including a first metal layer and a conductive oxide layer which covers the first metal layer and which has a thickness of 15 nm or more and 50 nm or less;

forming a rib covering at least a part of the lower electrode and including a pixel aperture which exposes the conductive oxide layer;

forming a second metal layer above the rib and the conductive oxide layer exposed through the pixel aperture; and

patterning the second metal layer by etching including wet etching to form a partition on the rib.

2 . The method of claim 1 , wherein

a thickness of the conductive oxide layer is 20 nm or more and 40 nm or less.

3 . The method of claim 1 , wherein

the first metal layer and the second metal layer are formed of one of aluminum, aluminum alloy, silver, and silver alloy.

4 . The method of claim 1 , wherein

the conductive oxide layer is formed of ITO or IZO.

5 . The method of claim 1 , wherein

the rib is formed of an inorganic material.

6 . The method of claim 5 , wherein

the rib is formed of one of a silicon nitride, a silicon oxide, and a silicon oxynitride.

7 . The method of claim 1 , wherein

an etchant used for the wet etching erodes the material of the first metal layer and the material of the second metal layer.

8 . The method of claim 7 , wherein

the etchant contains phosphoric acid, nitric acid, and acetic acid.

9 . The method of claim 8 , wherein

the etchant contains 60% or more by weight and 70% or less by weight of phosphoric acid, 8% or more by weight and 10% or less by weight of nitric acid, and 2% or more by weight and 5% or less by weight of acetic acid.

10 . The method of claim 1 , wherein

the forming the partition comprises:

arranging a resist above the second metal layer;

reducing a thickness of a first portion of the second metal layer, which is exposed from the resist, by dry etching; and

removing the first portion whose thickness is reduced and reducing a width of a second portion of the second metal layer, which is located under the resist, by the wet etching.

11 . The method of claim 1 , further comprising:

after forming the partition, forming an organic layer which is in contact with the lower electrode through the pixel aperture;

forming an upper electrode covering the organic layer; and

patterning the organic layer and the upper electrode to form a display element including the lower electrode, the organic layer, and the upper electrode.

12 . A display device comprising:

a lower electrode including a first metal layer and a conductive oxide layer covering the first metal layer;

a rib covering at least a part of the lower electrode and including a pixel aperture which exposes the conductive oxide layer;

a partition arranged on the rib and including a second metal layer;

an organic layer which is in contact with the conductive oxide layer through the pixel aperture;

an upper electrode covering the organic layer; and

a sealing layer arranged above the upper electrode, wherein

the conductive oxide layer has a thickness of 15 nm or more and 50 nm or less.

13 . The display device of claim 12 , wherein

a thickness of the conductive oxide layer is 20 nm or more and 40 nm or less.

14 . The display device of claim 12 , wherein

the partition includes a lower portion including the second metal layer and an upper portion protruding from a side surface of the lower portion.

15 . The display device of claim 14 , wherein

the upper electrode is in contact with the side surface of the lower portion.

16 . The display device of claim 12 , further comprising:

a cap layer covering the upper electrode.