Current detection device
A current detection device includes a main busbar and a semiconductor chip. A detected current flows through the main busbar. The semiconductor chip is spaced apart from the main busbar. The semiconductor chip includes a branch busbar, a detection part, and an output part. The branch busbar is connected in parallel with the main busbar. The detection part is arranged adjacent to the branch busbar and detects a first magnetic field generated based on a branch current flowing from the main busbar to the branch busbar. The output part calculates and outputs a current value based on the first magnetic field detected by the detection part.
1. A current detection device comprising:
a main busbar through which a detected current flows; and
a semiconductor chip spaced apart from the main busbar, wherein
the semiconductor chip comprises:
a branch busbar connected in parallel with the main busbar;
a detection part which is arranged adjacent to the branch busbar and detects a first magnetic field generated based on a branch current flowing from the main busbar to the branch busbar; and
an output part which calculates and outputs a current value based on the first magnetic field detected by the detection part.
2. The current detection device according to claim 1 , wherein
the branch busbar is adjusted to a second resistance value higher than a first resistance value of the main busbar.
3. The current detection device according to claim 2 , wherein
the branch busbar is adjusted to the second resistance value so that a temperature propagated to the detection part based on an amount of heat generated due to the branch current becomes lower than a temperature threshold value which ensures detection performance of the detection part.
4. The current detection device according to claim 1 , wherein
the branch busbar is arranged to be spaced apart from the detection part by a predetermined distance or more so that a temperature propagated to the detection part based on an amount of heat generated due to the branch current becomes lower than a temperature threshold value which ensures detection performance of the detection part.
5. The current detection device according to claim 1 , wherein
the main busbar generates a second magnetic field based on the detected current, and
the detection part is arranged at a posture or a position which makes it difficult to detect a component of the second magnetic field in a detection direction of the first magnetic field.
6. The current detection device according to claim 1 , comprising:
an electrical wiring which is formed of a metal wire and electrically connects the main busbar and the branch busbar.
7. The current detection device according to claim 6 , wherein
the branch current is adjusted based on a cross-sectional diameter or a wiring quantity of the electrical wiring.
8. The current detection device according to claim 1 , wherein
the branch busbar comprises:
a first branch busbar electrically connected in parallel to the main busbar; and
a second branch busbar electrically connected in parallel to the first branch busbar, and
the detection part is arranged adjacent to the second branch busbar.
9. The current detection device according to claim 1 , wherein
the semiconductor chip comprises a WLP wiring on a surface of the semiconductor chip, and
the branch busbar is formed at the WLP wiring.