Semiconductor device with fixed resistance and variable resistance elements
Provided is a semiconductor device. The semiconductor device includes a first circuit that includes a plurality of fixed resistance elements connected in series; a second circuit that includes a plurality of variable resistance elements connected in series and that is connected in series to the first circuit; a first cover portion that is provided on an upper layer side of the first circuit and that covers the first circuit; and a second cover portion that is provided on an upper layer side of the second circuit and that covers the second circuit. The first cover portion included two or more first metal films electrically connected, correspondingly, to units having any number of the fixed resistance elements, and the second cover portion includes a second metal film electrically connected to the plurality of the variable resistance elements.
1. A semiconductor device, comprising:
a first circuit that comprises a plurality of fixed resistance elements connected in series;
a second circuit that comprises a plurality of variable resistance elements connected in series and that is connected in series to the first circuit;
a first cover portion that is provided on an upper layer side of the first circuit and that covers the first circuit; and
a second cover portion that is provided on an upper layer side of the second circuit and that covers the second circuit,
wherein the first cover portion comprises two or more first metal films electrically connected, correspondingly, to units having any number of the fixed resistance elements, and
the second cover portion comprises a second metal film electrically connected to the plurality of variable resistance elements.
2. The semiconductor device according to claim 1 ,
wherein the first cover portion comprises the plurality of the first metal films provided for each of the fixed resistance elements.
3. The semiconductor device according to claim 1 ,
wherein the second metal film is connected to be equipotential with a potential of a substrate.
4. The semiconductor device according to claim 2 ,
wherein the second metal film is connected to be equipotential with a potential of a substrate.
5. The semiconductor device according to claim 1 ,
wherein the first circuit is connected to a first electrode on a high potential side, and
the second circuit is connected to a second electrode on a low potential side.
6. The semiconductor device according to claim 2 ,
wherein the first circuit is connected to a first electrode on a high potential side, and
the second circuit is connected to a second electrode on a low potential side.
7. The semiconductor device according to claim 1 ,
wherein the second circuit is connected to a ground side.
8. The semiconductor device according to claim 2 ,
wherein the second circuit is connected to a ground side.
9. The semiconductor device according to claim 1 ,
wherein an output voltage is output from an electrical connection portion at any position among a plurality of electrical connection portions connecting between the plurality of the fixed resistance elements in the first circuit.
10. The semiconductor device according to claim 2 ,
wherein an output voltage is output from an electrical connection portion at any position among a plurality of electrical connection portions connecting between the plurality of the fixed resistance elements in the first circuit.