Bipolar transistor and semiconductor device
A bipolar transistor is capable of reducing variations in electrical characteristics. A bipolar transistor 100 includes: a collector region 150 which is a predetermined region in a P-type semiconductor substrate 110 ; a base region 140 which is formed within the collector region 150 and is an N-type well region; a polysilicon 130 formed on the base region 140 via an insulating film 131 and having an outer periphery, as viewed in a plan view, in a rectangular ring shape; and a P-type emitter region 120 surrounded by the polysilicon 130 and formed within the base region 140 . The polysilicon 130 includes an extension portion 130 a extending inside a contact region 141 of the base region 140 and electrically connected to the base region 140.
1 . A bipolar transistor, comprising:
a collector region which is a predetermined region in a semiconductor substrate of a first conductivity type;
a base region which is formed within the collector region and is a well region of a second conductivity type;
a first polysilicon which is formed on the base region via an insulating film and an outer periphery of which as viewed in a plan view has a rectangular ring shape; and
an emitter region of the first conductivity type which is surrounded by the first polysilicon and is formed within the base region,
wherein the first polysilicon comprises a first extension portion extending inside a contact region of the base region and electrically connected to the base region.
2 . The bipolar transistor according to claim 1 , wherein the first extension portion is arranged at at least one of four corners of the outer periphery of the first polysilicon.
3 . The bipolar transistor according to claim 1 , wherein the first extension portion does not reach an outer periphery of the base region.
4 . The bipolar transistor according to claim 1 , wherein the first extension portion is electrically connected to the base region by a polysilicon contact.
5 . The bipolar transistor according to claim 1 , wherein the first polysilicon is implanted with an impurity of the first conductivity type to a high concentration in a vicinity of the emitter region, and is implanted with an impurity of the second conductivity type to a high concentration in a vicinity of the base region.
6 . The bipolar transistor according to claim 1 , wherein at least ½ or more of the first polysilicon is of the second conductivity type.
7 . The bipolar transistor according to claim 1 , wherein an outer periphery of the emitter region is octagonal.
8 . The bipolar transistor according to claim 1 , further comprising a ring-shaped second polysilicon formed at a boundary between the base region and the collector region as viewed in a plan view.
9 . The bipolar transistor according to claim 8 , wherein the second polysilicon comprises a second extension portion extending inside the collector region and electrically connected to the collector region.
10 . A semiconductor device, comprising the bipolar transistor according to claim 1 .
11 . The semiconductor device according to claim 10 , further comprising a CMOS portion.