METHOD OF MANUFACTURING DISPLAY DEVICE

1 . A method of manufacturing a display device, the method comprising:

preparing a processing substrate by forming a first lower electrode of a first sub-pixel, a second lower electrode of a second sub-pixel, and a third lower electrode of a third sub-pixel, and by forming a rib having a first aperture overlapping the first lower electrode, a second aperture overlapping the second lower electrode, and a third aperture overlapping the third lower electrode;

forming a first thin film including a first light emitting layer over the first sub-pixel, the second sub-pixel, and the third sub-pixel;

forming a first resist that exposes the first thin film in the second sub-pixel and the third sub-pixel and covers the first thin film in the first sub-pixel;

removing the first thin film in the second sub-pixel and the third sub-pixel using the first resist as a mask, remaining the first thin film in the first sub-pixel, exposing the second lower electrode from the second aperture, and exposing the third lower electrode from the third aperture;

removing the first resist;

forming a second thin film including a second light emitting layer over the first sub-pixel, the second sub-pixel, and the third sub-pixel;

forming a second resist that exposes the second thin film in the first sub-pixel and the third sub-pixel and covers the second thin film in the second sub-pixel;

removing the second thin film in the first sub-pixel and the third sub-pixel using the second resist as a mask, remaining the second thin film in the second sub-pixel, and exposing the third lower electrode from the third aperture; and

removing the second resist, wherein

an area of the first aperture is larger than an area of the second aperture.

2 . The method of manufacturing a display device according to claim 1 , the method further comprising, after the second resist is removed:

forming a third thin film including a third light emitting layer over the first sub-pixel, the second sub-pixel, and the third sub-pixel;

forming a third resist that exposes the third thin film in the first sub-pixel and the second sub-pixel and covers the third thin film in the third sub-pixel;

removing the third thin film in the first sub-pixel and the second sub-pixel using the third resist as a mask, and remaining the third thin film in the third sub-pixel; and

removing the third resist, wherein

the area of the second aperture is larger than an area of the third aperture.

3 . The method of manufacturing a display device according to claim 1 , wherein the first light emitting layer is formed of a material that emits light in a blue wavelength range.

4 . The method of manufacturing a display device according to claim 2 , wherein

the first light emitting layer is formed of a material that emits light in a blue wavelength range,

the second light emitting layer is formed of a material that emits light in a green wavelength range, and

the third light emitting layer is formed of a material that emits light in a red wavelength range.

5 . The method of manufacturing a display device according to claim 2 , wherein

the first light emitting layer is formed of a material that emits light in a blue wavelength range,

the second light emitting layer is formed of a material that emits light in a red wavelength range, and

the third light emitting layer is formed of a material that emits light in a green wavelength range.

6 . The method of manufacturing a display device according to claim 2 , wherein

in the preparing the processing substrate,

a partition including a lower portion located on the rib and an upper portion located on the lower portion and protruding from a side surface of the lower portion is further formed.

7 . The method of manufacturing a display device according to claim 6 , wherein the lower portion of the partition is formed of a conductive material.

8 . The method of manufacturing a display device according to claim 7 , wherein

in the forming the first thin film,

a first organic layer including the first light emitting layer is formed on each of the first lower electrode, the second lower electrode, and the third lower electrode,

a first upper electrode is formed on the first organic layer and is in contact with the lower portion of the partition,

a first cap layer is formed on the first upper electrode, and

a first sealing layer is formed on the first cap layer.

9 . The method of manufacturing a display device according to claim 8 , wherein,

in the forming the second thin film,

a second organic layer including the second light emitting layer is formed on the second lower electrode, the third lower electrode, and the first sealing layer in the first sub-pixel,

a second upper electrode is formed on the second organic layer and is in contact with the lower portion of the partition,

a second cap layer is formed on the second upper electrode, and

a second sealing layer is formed on the second cap layer.

10 . The method of manufacturing a display device according to claim 9 , wherein

in the forming the third thin film,

a third organic layer including the third light emitting layer is formed on the third lower electrode, the first sealing layer in the first sub-pixel, and the second sealing layer in the second sub-pixel,

a third upper electrode is formed on the third organic layer and is in contact with the lower portion of the partition,

a third cap layer is formed on the third upper electrode, and

a third sealing layer is formed on the third cap layer.

11 . The method of manufacturing a display device according to claim 10 , wherein the first sealing layer, the second sealing layer, and the third sealing layer are formed of the same inorganic insulating material.

12 . The method of manufacturing a display device according to claim 10 , wherein the rib, the first sealing layer, the second sealing layer, and the third sealing layer are formed of silicon nitride.

13 . A method of manufacturing a display device, the method comprising:

preparing a processing substrate by forming a first lower electrode of a first sub-pixel, a second lower electrode of a second sub-pixel, and a third lower electrode of a third sub-pixel, and by forming a rib having a first aperture overlapping the first lower electrode, a second aperture overlapping the second lower electrode, and a third aperture overlapping the third lower electrode;

forming a first thin film including a first light emitting layer that emits light in a blue wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;

forming a first resist that exposes the first thin film in the second sub-pixel and the third sub-pixel and covers the first thin film in the first sub-pixel;

removing the first thin film in the second sub-pixel and the third sub-pixel using the first resist as a mask, remaining the first thin film in the first sub-pixel, exposing the second lower electrode from the second aperture, and exposing the third lower electrode from the third aperture;

removing the first resist;

forming a second thin film including a second light emitting layer that emits light in a green wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;

forming a second resist that exposes the second thin film in the first sub-pixel and the third sub-pixel and covers the second thin film in the second sub-pixel;

removing the second thin film in the first sub-pixel and the third sub-pixel using the second resist as a mask, remaining the second thin film in the second sub-pixel, and exposing the third lower electrode from the third aperture;

removing the second resist;

forming a third thin film including a third light emitting layer that emits light in a red wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;

forming a third resist that exposes the third thin film in the first sub-pixel and the second sub-pixel and covers the third thin film in the third sub-pixel;

removing the third thin film in the first sub-pixel and the second sub-pixel using the third resist as a mask, and remaining the third thin film in the third sub-pixel; and

removing the third resist.

14 . A method of manufacturing a display device, the method comprising:

preparing a processing substrate by forming a first lower electrode of a first sub-pixel, a second lower electrode of a second sub-pixel, and a third lower electrode of a third sub-pixel, and by forming a rib having a first aperture overlapping the first lower electrode, a second aperture overlapping the second lower electrode, and a third aperture overlapping the third lower electrode;

forming a first thin film including a first light emitting layer that emits light in a blue wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;

forming a first resist that exposes the first thin film in the second sub-pixel and the third sub-pixel and covers the first thin film in the first sub-pixel;

removing the first thin film in the second sub-pixel and the third sub-pixel using the first resist as a mask, remaining the first thin film in the first sub-pixel, exposing the second lower electrode from the second aperture, and exposing the third lower electrode from the third aperture;

removing the first resist;

forming a second thin film including a second light emitting layer that emits light in a red wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;

forming a second resist that exposes the second thin film in the first sub-pixel and the third sub-pixel and covers the second thin film in the second sub-pixel;

removing the second thin film in the first sub-pixel and the third sub-pixel using the second resist as a mask, remaining the second thin film in the second sub-pixel, and exposing the third lower electrode from the third aperture;

removing the second resist;

forming a third thin film including a third light emitting layer that emits light in a green wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;

forming a third resist that exposes the third thin film in the first sub-pixel and the second sub-pixel and covers the third thin film in the third sub-pixel;

removing the third thin film in the first sub-pixel and the second sub-pixel using the third resist as a mask, and remaining the third thin film in the third sub-pixel; and

removing the third resist.