COLOR CONVERSION PANEL INCLUDING LUMINESCENT NANOPARTICLES, NANOPARTICLES, AND ELECTRONIC DEVICE INCLUDING THE SAME

1 . A color conversion panel, comprising:

a color conversion layer comprising a color conversion region and optionally a partition wall defining each region of the color conversion layer,

wherein the color conversion region comprises a first region corresponding to a first pixel,

the first region comprises a first composite,

the first composite comprises a matrix and a semiconductor nanoparticle, wherein the semiconductor nanoparticle is dispersed in the matrix,

the semiconductor nanoparticle comprises silver, a Group 13 metal, zinc, and a chalcogen element,

the semiconductor nanoparticle is configured to emit a first light,

the Group 13 metal is indium, gallium, aluminum, or a combination thereof,

the chalcogen element is sulfur, selenium, or a combination thereof, and

in the semiconductor nanoparticle, a mole ratio of zinc to a total sum of silver, Group 13 metal, and zinc is greater than or equal to about 0.01:1.

2 . The color conversion panel of claim 1 , wherein

the Group 13 metal is indium, gallium, or a combination thereof, and

the chalcogen element comprises sulfur.

3 . The color conversion panel of claim 1 , wherein

the first light has a maximum emission wavelength of greater than or equal to about 500 nanometers to less than or equal to about 650 nanometers, and

optionally, a full width at half maximum of the first light is greater than or equal to about 5 nanometers to less than or equal to about 90 nanometers.

4 . The color conversion panel of claim 1 , wherein

in the semiconductor nanoparticle,

a mole ratio of zinc to a total sum of silver, indium, gallium, and zinc is greater than or equal to about 0.05:1 to less than or equal to about 0.95:1,

a mole ratio of zinc to sulfur is greater than or equal to about 0.05:1 to less than or equal to about 0.8:1,

a mole ratio of a total sum of indium and gallium to sulfur is greater than or equal to about 0.05:1 to less than or equal to about 0.8:1, or

a mole ratio of silver to sulfur is greater than or equal to about 0.05:1 to less than or equal to about 0.5:1.

5 . The color conversion panel of claim 1 , wherein

in the semiconductor nanoparticle,

a mole ratio of silver to a total sum of silver, indium, zinc, and gallium is greater than or equal to about 0.05 to less than or equal to about 0.39:1, or

a mole ratio of sulfur to a total sum of silver, indium, zinc, and gallium is greater than or equal to about 0.69:1 to less than or equal to about 5:1.

6 . The color conversion panel of claim 1 , wherein

in the semiconductor nanoparticle,

a mole ratio of zinc to a total sum of silver, indium, gallium, and zinc is greater than or equal to about 0.1:1 and less than or equal to about 0.8:1.

7 . The color conversion panel of claim 1 , wherein

the first composite has a light conversion efficiency of greater than or equal to about 12%, or

the first composite has an incident light absorbance of greater than or equal to about 90%,

wherein the light conversion efficiency is defined by Equation 2 and the incident light absorbance is defined by Equation 3:

light conversion efficiency=[ A /( B−B ′)]×100%  Equation 2

incident light absorbance=[( B−B ′)/ B]× 100%  Equation 3

wherein, in Equations 2 and 3,

A is an amount of a first light emitted from the first composite,

B is an amount of incident light provided to the first composite, and

B′ is an amount of incident light passing through the first composite.

8 . A display device, comprising:

a light source; and

the color conversion panel of claim 1 ,

wherein the light source is configured to provide the color conversion panel with an incident light.

9 . The display device of claim 8 , wherein

the light source comprises an organic light emitting diode, a micro light emitting diode, a mini light emitting diode, a light emitting diode comprising a nanorod, or a combination thereof.

10 . The display device of claim 8 , wherein

in the color conversion panel, a color conversion layer comprises two or more color conversion regions, and

the display device further comprises a color filter, a microlens, or a combination thereof on the color conversion regions.

11 . A semiconductor nanoparticle, comprising:

silver, a Group 13 metal, zinc, and a chalcogen element,

wherein the semiconductor nanoparticle is configured to emit a first light,

wherein the Group 13 metal is indium, gallium, aluminum, or a combination thereof,

the chalcogen element is sulfur, selenium, or a combination thereof,

wherein in the semiconductor nanoparticle, a mole ratio of zinc to a total sum of silver, Group 13 metal, and zinc is greater than or equal to about 0.03:1,

wherein the semiconductor nanoparticle exhibit a quantum yield of greater than or equal to about 50%,

wherein the first light has a maximum emission wavelength of greater than or equal to about 505 nanometers to less than or equal to about 580 nanometers, and

a full width at half maximum of an emission peak of the first light is greater than or equal to about 5 nanometers to less than or equal to about 90 nm.

12 . The semiconductor nanoparticle of claim 11 , wherein

the Group 13 metal is indium, gallium, or a combination thereof, and

the chalcogen element comprises sulfur, and

optionally

wherein the quantum yield is greater than or equal to about 60% to less than or equal to about 100%, or

the full width at half maximum is greater than or equal to about 10 nanometers to less than or equal to about 60 nanometers.

13 . The semiconductor nanoparticle of claim 11 , wherein

in the semiconductor nanoparticle,

a mole ratio of zinc to sulfur is greater than or equal to about 0.1:1 to less than or equal to about 0.8:1,

a mole ratio of a sum of indium and gallium to sulfur is greater than or equal to about 0.05:1 to less than or equal to about 0.8:1, or

a mole ratio of silver to sulfur is greater than or equal to about 0.05:1 to less than or equal to about 0.5:1.

14 . The semiconductor nanoparticle of claim 11 , wherein

in the semiconductor nanoparticle,

a mole ratio of silver to a total sum of silver, indium, zinc, and gallium is greater than or equal to about 0.05:1 to less than or equal to about 0.40:1, or

a mole ratio of sulfur to a total sum of silver, indium, zinc, and gallium is greater than or equal to about 0.9:1 to less than or equal to about 5:1.

15 . The semiconductor nanoparticle of claim 11 , wherein

in a photoluminescence spectrum of the semiconductor nanoparticle, a relative band-edge emission intensity is greater than 20, wherein the relative band-edge emission intensity is defined by Equation 4:

relative band-edge emission intensity= A 1/ A 2  Equation 4

wherein, in Equation 4,

A1 is an intensity at the maximum emission wavelength, and

A2 is a maximum intensity in a wavelength range of the maximum emission wavelength+greater than or equal to about 80 nm.

16 . The semiconductor nanoparticle of claim 11 , wherein

in the semiconductor nanoparticle,

a mole ratio of zinc to a total sum of silver, indium, gallium, and zinc is greater than or equal to about 0.1:1 to less than or equal to about 0.8:1.

17 . The semiconductor nanoparticle of claim 11 , wherein

a zinc content in an outermost layer of the semiconductor nanoparticle is greater than a zinc content in an inner portion of the semiconductor nanoparticle.

18 . A method for preparing the semiconductor nanoparticles of claim 11 , comprising:

preparing a first particle comprising silver, a Group 13 metal, and a chalcogen element, and

forming a layer comprising a zinc chalcogenide on the first particle.

19 . The method of claim 18 , wherein

the preparing the first particle comprises:

obtaining a first semiconductor nanocrystal comprising silver, indium, gallium, and sulfur;

preparing a reaction medium comprising a first precursor, an organic ligand, and an organic solvent;

heating the reaction medium to a first temperature;

adding the first semiconductor nanocrystal and a second precursor to the reaction medium to obtain a reaction mixture, wherein one of the first precursor and the second precursor is a gallium precursor and the other is a sulfur precursor; and

heating the reaction medium to a second temperature and reacting for a first reaction time to form the first particle,

wherein the first temperature is greater than or equal to about 120° C. to less than or equal to about 280° C., and

the second temperature is greater than or equal to about 190° C. to less than or equal to about 380° C.

20 . An electronic device, comprising the semiconductor nanoparticle of claim 11 .