BROAD WAVELENGTH LOW REFLECTIVITY LIGHT ABSORBER
A light absorbing clement includes a phase match composite layer comprising a composite dielectric film with constituents having differing refractive indices, a metal layer, and a light absorbing carbon layer disposed between the metal layer and the phase match composite layer.
1 . A light absorbing element, comprising;
a phase match composite layer comprising a composite dielectric film with constituents having differing refractive indices, the phase match composite layer having a first surface and an opposing second surface separated by a thickness;
a metal layer; and
a light absorbing carbon layer disposed between the metal layer and the first surface of the phase match composite layer, the light absorbing carbon layer having a first surface and an opposing second surface separated by a thickness.
2 . The light absorbing element according to claim 1 , wherein the phase match composite layer comprises a layer of silicon oxynitride of a first composition adjacent to the first surface, a layer of silicon oxynitride of a second composition adjacent to the second surface, wherein the second composition has more oxygen than the first composition.
3 . The light absorbing element according to claim 2 , wherein the phase match composite layer comprises graded composition defining the thickness of the phase match composite layer, the graded composition increasing in an amount of oxygen along a thickness direction from the first surface to the opposing second surface.
4 . The light absorbing element according to claim 2 , wherein the phase match composite layer comprises graded composition defining the thickness of the phase match composite layer, the graded composition decreasing in an amount of nitrogen along a thickness direction from the first surface to the opposing second surface.
5 . The light absorbing element according to claim 2 , wherein the phase match composite layer comprises graded composition defining the thickness of the phase match composite layer, the first surface consists essentially of silicon nitride and the second surface consists essentially of silicon oxide.
6 . The light absorbing element according to claim 1 , wherein the light absorbing carbon layer comprises a layer of metal and carbon of a first composition adjacent to the first surface, a layer of metal and carbon of a second composition adjacent to the second surface, wherein the second composition has more carbon than the first composition.
7 . The light absorbing element according to claim 6 , wherein the light absorbing carbon layer comprises a graded carbon-metal composition defining the thickness of the light absorbing carbon layer, the graded composition increasing in an amount of carbon along a thickness direction from the first surface to the opposing second surface.
8 . The light absorbing element according to claim 6 , wherein the light absorbing carbon layer comprises a graded carbon-metal composition defining the thickness of the light absorbing carbon layer, the graded composition decreasing in an amount of metal along a thickness direction from the first surface to the opposing second surface.
9 . The light absorbing element according to claim 6 , wherein the light absorbing carbon layer comprises a graded carbon-metal composition defining the thickness of the light absorbing carbon layer, the first surface consists essentially of metal, and the second surface consists essentially of carbon.
10 . The light absorbing element according to claim 1 , wherein the light absorbing element reflects less than 10% incident light for all wavelengths from 400 nanometers to 1200 nanometers.
11 . The light absorbing element according to claim 1 , wherein the phase match composite layer further comprises a layer of niobium pentoxide forming the first surface.
12 . The light absorbing element according to claim 1 , further comprising a layer of silicon carbide separating the light absorbing carbon layer from the phase match composite layer.
13 . The light absorbing element according to claim 1 , wherein the metal layer comprises a titanium tungsten alloy.
14 . The light absorbing element according to claim 1 , wherein the phase match composite layer has a thickness in a range from 50 to 200 nanometers, the light absorbing carbon layer has a thickness in a range from 50 to 250 nanometers, and the metal layer has a thickness in a range from 50 to 150 nanometers.
15 . The light absorbing element according to claim 12 , wherein the phase match composite layer has a thickness in a range from 50 to 200 nanometers, the light absorbing carbon layer has a thickness in a range from 50 to 250 nanometers, the metal layer has a thickness in a range from 50 to 150 nanometers, and the layer of silicon carbide has a thickness in a range from 10 to 20 nanometers.
16 . An optical sensor article, comprising:
a silicon substrate;
a light sensor disposed in or on the silicon substrate; and
the light absorbing element according to claim 1 disposed on or in the silicon substrate and adjacent to the light sensor.
17 . The optical sensor article according to claim 16 , further comprising an anti-reflective layer separating the metal layer from the silicon substrate, wherein the anti-reflective layer comprises a layer of silicon oxide disposed on a layer of silicon nitride.
18 . The optical sensor article according to claim 16 , wherein the light absorbing element defines at least a portion of an optical cavity, the light sensor disposed in the optical cavity.
19 . The optical sensor article according to claim 16 , further comprising a layer of silicon carbide adhering or fixing the light absorbing carbon layer to the phase match composite layer.
20 . A method of forming a light absorbing element, comprising, depositing a metal layer;
depositing a light absorbing carbon layer on the metal layer;
depositing a layer of silicon nitride onto the carbon layer;
depositing a gradient layer of silicon nitride and silicon oxide onto the layer of silicon nitride by reducing an amount of nitrogen and increasing an amount of oxygen during the depositing a gradient layer step; and
depositing a layer of silicon oxide onto the gradient layer, forming a phase match composite layer.
21 . The method according to claim 20 , further comprising depositing a silicon carbide layer onto the light absorbing carbon layer and then depositing a layer of silicon nitride onto the silicon carbide layer.
22 . The method according to claim 20 , wherein the phase match composite layer has a thickness in a range from 50 to 200 nanometers, the light absorbing carbon layer has a thickness in a range from 50 to 250 nanometers, and the metal layer has a thickness in a range from 50 to 150 nanometers.
23 . The method according to claim 20 , wherein the depositing a gradient layer step comprises depositing a gradient layer of silicon nitride and silicon oxide onto the layer of silicon nitride, by depositing silicon in an oxygen and nitrogen ambient and changing relative amounts of oxygen and nitrogen from a low oxygen to nitrogen ratio to a high oxygen to nitrogen ratio during the depositing a gradient layer step.
24 . The method according to claim 20 , wherein the depositing a light absorbing carbon layer step comprises depositing a gradient layer of metal and carbon onto the metal layer, by reducing an amount of metal and increasing an amount of carbon during the depositing a light absorbing carbon layer step.
25 . The method according to claim 20 , wherein the depositing a light absorbing carbon layer step comprises depositing a gradient layer of metal and carbon onto the metal layer, by co-depositing metal and carbon simultaneously and changing relative deposition rates of the metal and carbon from a low carbon to metal rate ratio to a high carbon to metal rate ratio during the depositing a light absorbing carbon layer step.