Solar cell emitter region fabrication with differentiated P-type and N-type layouts and incorporating dotted diffusion
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type layouts and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is on a first thin dielectric layer on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is on a second thin dielectric layer on the back surface of the substrate. The second polycrystalline silicon emitter region has a vertical thickness less than a vertical thickness of the first polycrystalline silicon emitter region.
1 . A solar cell, comprising:
a substrate having a light-receiving surface and a back surface;
a first polycrystalline silicon emitter region of a first conductivity type on a first thin dielectric layer on the back surface of the substrate;
a second polycrystalline silicon emitter region of a second, different, conductivity type on a second thin dielectric layer on the back surface of the substrate, wherein the second polycrystalline silicon emitter region has a vertical thickness less than a vertical thickness of the first polycrystalline silicon emitter region, wherein the second polycrystalline emitter region has a bottommost surface at a same level as a bottommost surface of the first polycrystalline silicon emitter region, and wherein the second polycrystalline silicon emitter region does not vertically overlap with the first polycrystalline silicon emitter region;
an insulating layer on a top surface of the first polycrystalline silicon emitter region, on a top surface of the second polycrystalline silicon emitter region, along sides of second polycrystalline silicon emitter region, and along a side of the first polycrystalline silicon emitter region, wherein the insulating layer has a vertical thickness over the first polycrystalline silicon emitter region greater than a vertical thickness of the insulating layer over the second polycrystalline silicon emitter region; and
a conductive contact structure over and extending through the insulating layer to directly contact the second polycrystalline silicon emitter region, wherein the conductive contact structure is vertically overlapping with but separated from the first polycrystalline silicon emitter region along a vertical axis.
2 . The solar cell of claim 1 , wherein the second polycrystalline silicon emitter region comprises a plurality of discrete islands surrounded by the first polycrystalline silicon emitter region.
3 . The solar cell of claim 2 , wherein each one of the plurality of discrete islands has a substantially circular shape from a plan view.
4 . The solar cell of claim 1 , wherein the second polycrystalline silicon emitter region comprises a plurality of lines alternating with lines of the first polycrystalline silicon emitter region.
5 . The solar cell of claim 1 , wherein the first polycrystalline silicon emitter region occupies greater than 90% of the surface area of the back surface of the substrate.
6 . The solar cell of claim 1 , wherein the first polycrystalline silicon emitter region is n-type, and the second polycrystalline silicon emitter region is p-type.
7 . The solar cell of claim 1 , wherein the first polycrystalline silicon emitter region is p-type, and the second polycrystalline silicon emitter region is n-type.
8 . The solar cell of claim 1 , wherein the first thin dielectric layer is discontinuous from the second thin dielectric layer.
9 . The solar cell of claim 1 , wherein the first thin dielectric layer is continuous with the second thin dielectric layer.
10 . The solar cell of claim 1 , wherein the vertical thickness of the second polycrystalline silicon emitter region is in a range of 10%-50% less than the vertical thickness of the first polycrystalline silicon emitter region.
11 . The solar cell of claim 1 , wherein the vertical thickness of the second polycrystalline silicon emitter region is about 160 nanometers, and the vertical thickness of the first polycrystalline silicon emitter region is about 200 nanometers.
12 . The solar cell of claim 1 , wherein the second polycrystalline silicon emitter region is laterally spaced apart from the first polycrystalline silicon emitter region by about 20 microns.
13 . The solar cell of claim 1 , further comprising:
a second conductive contact structure electrically connected to the first polycrystalline silicon emitter region.