8-inch SiC single crystal substrate
An 8-inch SiC single crystal substrate of an embodiment has a diameter in a range of 195 mm to 205 mm, a thickness in a range of 300 μm to 650 μm, a SORI of 50 μm or less, and an in-plane variation of the thickness of the substrate, which is the difference between the maximum and minimum substrate thickness at the center of the substrate and four points on the circumference of a circle having a radius half the radius of the substrate, is 1.5 μm or less.
1. An 8-inch SiC single crystal substrate, wherein the diameter is in a range of 195 mm to 205 mm, the thickness is in a range of 300 μm to 650 μm, SORI is 50 μm or less, and the in-plane variation of the thickness of the substrate, which is the difference between the maximum and minimum substrate thickness at the center of the substrate and four points on the circumference of a circle having a radius half the radius of the substrate, is 1.5 μm or less.
2. The 8-inch SiC single crystal substrate according to claim 1 , wherein the SORI is 40 μm or less.
3. The 8-inch SiC single crystal substrate according to claim 2 , wherein the in-plane variation of the thickness of the substrate is 1.0 μm or less.
4. The 8-inch SiC single crystal substrate according to claim 1 , wherein the SORI is 30 μm or less.
5. The 8-inch SiC single crystal substrate according to claim 4 , wherein the in-plane variation of the thickness of the substrate is 1.0 μm or less.
6. The 8-inch SiC single crystal substrate according to claim 1 , wherein the SORI is 20 μm or less.
7. The 8-inch SiC single crystal substrate according to claim 6 , wherein the in-plane variation of the thickness of the substrate is 1.0 μm or less.
8. The 8-inch SiC single crystal substrate according to claim 1 , wherein the in-plane variation of the thickness of the substrate is 1.0 μm or less.
9. The 8-inch SiC single crystal substrate according to claim 1 , wherein the density of micropipe defects is 1/cm 2 or less, and the total number of etch pits appearing by KOH etching performed at 550° C. for 10 minutes is 5>10 9 or less.
10. The 8-inch SiC single crystal substrate according to claim 9 , wherein the total number of etch pits is 5×10 8 or less.
11. The 8-inch SiC single crystal substrate according to claim 10 , wherein the total number of etch pits is 5×10 7 or less.
12. The 8-inch SiC single crystal substrate according to claim 11 , wherein the density of etch pits identified as threading dislocations is 2×10 3 /cm 2 or less, and the density of etch pits identified as basal plane dislocations is 5×10 3 /cm 2 or less.
13. The 8-inch SiC single crystal substrate according to claim 10 , wherein the density of etch pits identified as threading dislocations is 2×10 3 /cm 2 or less, and the density of etch pits identified as basal plane dislocations is 5×10 3 /cm 2 or less.
14. The 8-inch SiC single crystal substrate according to claim 9 , wherein the density of etch pits identified as threading dislocations is 2×10 3 /cm 2 or less, and the density of etch pits identified as basal plane dislocations is 5×10 3 /cm 2 or less.