HIGH FLUX LED WITH LOW OPERATING VOLTAGE UTILIZING TWO P-N JUNCTIONS CONNECTED IN PARALLEL AND HAVING ONE TUNNEL JUNCTION
Provided is an LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions have opposite orders of deposition of the n- and p-layers. One light-emitting active region is embedded between the n- and p-layers of the first junction and another light-emitting active region is embedded between the n- and p-layers of the second junction. Contacts are processed such that forward current can be passed in parallel through both of the junctions using a single voltage source. For a given forward current, the LED operates at lower voltage with higher optical flux and efficiency.
1 . A light-emitting diode (LED) die comprising:
a first light emitting stack on a second light emitting stack, wherein
the first light emitting stack comprises a first n-type layer on a first tunnel junction, the first tunnel junction on a first p-type layer, and the first p-type layer on a first light-emitting active region,
the second light emitting stack comprises a second n-type layer in contact with the first light-emitting active region and on a second light-emitting active region, the second light-emitting active region on a second p-type layer; and
a metal contact on the second light emitting stack and extending to the first light emitting stack.
2 . The LED die of claim 1 , wherein the metal contact comprises one or more of a cathode layer or an anode layer.
3 . The LED die of claim 1 , wherein a forward current passes in parallel through the first light emitting stack and the second light emitting stack using a single voltage source.
4 . The LED die of claim 1 , further comprising a sub-mount.
5 . The LED die of claim 1 , wherein the first n-type layer, the second n-type layer, and the third n-type layer independently comprise one or more of gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), gallium aluminum nitride (GaAlN), gallium indium nitride (GaInN), aluminum gallium nitride (AlGaN), aluminum indium nitride (AlInN), indium gallium nitride (InGaN), indium aluminum nitride (InAlN), and the like.
6 . The LED die of claim 5 , wherein the first n-type layer, the second n-type layer, and the third n-type layer comprise gallium nitride (GaN).
7 . The LED die of claim 1 , wherein the cathode layer and the anode layer independently comprise one or more of aluminum (Al) or silver (Ag).
8 . The LED die of claim 2 , further comprising a dielectric layer on the LED die.
9 . The LED die of claim 2 , further comprising a bonding metal layer.
10 . The LED die of claim 9 , wherein the bonding metal layer comprises one or more of titanium (Ti) and gold (Au).
11 . The LED die of claim 1 , wherein one or more of the first light-emitting active region and the second light-emitting active region emits green light.
12 . A method of manufacturing a light-emitting diode (LED) die, the method comprising:
epitaxially growing a first light emitting stack and a second light emitting stack on an epitaxial wafer, the first light emitting stack comprising a first n-type layer on a first tunnel junction, the first tunnel junction on a first p-type layer, and the first p-type layer on a first light-emitting active region, the second light emitting stack comprising a second n-type layer in contact with the first light-emitting active region and on a second light-emitting active region, the second light-emitting active region on a second p-type layer; and
forming at least one metal contact on the second light emitting stack.
13 . The method of claim 12 , wherein the metal contact comprises one or more of a cathode layer or an anode layer.
14 . The method of claim 12 , wherein a forward current passes in parallel through the first light emitting stack and the second light emitting stack using a single voltage source.
15 . The method of claim 12 , further comprising mounting the LED die to a sub-mount.
16 . The method of claim 13 , further comprising forming a dielectric layer on the LED die.
17 . The method of claim 13 , further comprising forming a bonding metal layer.
18 . The method of claim 12 , wherein one or more of the first light-emitting active region and the second light-emitting active region emits green light.
19 . A method of manufacturing thin film flip chip (TFFC) die, the method comprising:
sequentially forming two p-n junctions on an epitaxial wafer to form an epitaxial stack, the epitaxial stack comprising at least one n-type layer and at least one p-type layer and having a light-emitting active region embedded between the at least one n-type layer and at least one p-type layer;
dry etching the epitaxial stack to form two vias of different depths;
conformally depositing a dielectric layer in the two vias;
removing a portion of the dielectric layer to form contact openings;
depositing one or more of an anode layer and a cathode layer in the contact openings;
depositing a bonding metal layer on one or more of the anode layer or the cathode layer;
singulating the thin film flip chip (TFFC) die; and
bonding the thin film flip chip (TFFC) die to a sub-mount.
20 . The method of claim 19 , wherein the epitaxial stack comprises a first light emitting stack and a second light emitting stack, the first light emitting stack comprising a first n-type layer on a first tunnel junction, the first tunnel junction on a first p-type layer, and the first p-type layer on a first light-emitting active region, and the second light emitting stack comprising a second n-type layer in contact with the first light-emitting active region and on a second light-emitting active region, the second light-emitting active region on a second p-type layer.