Metal-oxide-metal (MOM) capacitors for integrated circuit monitoring
An array of metal-oxide-metal (MOM) capacitors formed in an integrated circuit (IC) structure may be used for evaluating misalignments between patterned layers of the IC structure. The array of MOM capacitors may be formed in a selected set of patterned layers, e.g., a via layer formed between a pair of metal interconnect layers. The MOM capacitors may be programmed with different patterned layer alignments (e.g., built in to photomasks or reticles used to form the patterned layers) to define an array of different alignments. When the MOM capacitors are formed on the wafer, the actual patterned layer alignments capacitors may differ from the programmed layer alignments due a process-related misalignment. The MOM capacitors may be subjected to electrical testing to identify this process-related misalignment, which may be used for initiating a correcting action, e.g., adjusting a manufacturing process or discarding misaligned IC structures or devices.
1. A method of evaluating damage to dielectric material in an integrated circuit (IC) structure, the method comprising:
forming at least one metal-oxide-metal (MOM) capacitor including a plurality of elongated fingers separated by a dielectric material;
performing electrical testing of the at least one MOM capacitor, including:
measuring a respective capacitance of the at least one MOM capacitor; and
comparing the respective measured capacitance of the at least one MOM capacitor with reference data or at least one threshold value; and
determining a physical defect in the dielectric material based on the electrical testing of the at least one MOM capacitor.
2. The method of claim 1 , wherein the dielectric material comprises organosilicate glass.
3. The method of claim 1 , further comprising initiating a corrective action based on the determined physical defect in the dielectric material.
4. The method of claim 3 , wherein initiating a corrective action based on the determined physical defect in the dielectric material comprises discarding the IC structure or adjusting a fabrication process in response to the determined physical defect in the dielectric material.
5. The method of claim 1 , wherein performing electrical testing of the at least one MOM capacitor comprises measuring a breakdown voltage of the MOM capacitor, and wherein determining the physical defect comprises evaluating the measured breakdown voltage.
6. The method of claim 1 , wherein the dielectric material is a low-k dielectric material.
7. A method of evaluating damage to dielectric material in an integrated circuit (IC) structure, the method comprising:
forming a plurality of metal-oxide-metal (MOM) capacitors including a plurality of elongated fingers separated by a dielectric material;
performing electrical testing including measuring a capacitance of respective ones of the plurality of MOM capacitors;
determining the physical defect in the dielectric material based on the electrical testing of, including:
comparing the measured capacitances of the plurality of MOM capacitors with each other or with reference capacitance data; and
identifying the existence of voids in the dielectric material of at least one of the plurality of MOM capacitors based on the comparison of measured capacitances.
8. The method of claim 7 , wherein comparing the measured capacitances of the plurality of MOM capacitors with each other or with reference capacitance data comprises:
generating a distribution of the measured capacitances of the plurality of MOM capacitors; and
comparing the generated distribution of the measured capacitances a reference distribution to identify a MOM capacitor having an outlier capacitance.
9. The method of claim 7 , comprising in response to identifying the existence of voids in the dielectric material of at least one MOM capacitor, discarding at least one device including the at least one MOM capacitor, or adjusting a fabrication process.
10. A method of monitoring metal corrosion in an integrated circuit (IC) structure, the method comprising:
forming a metal-oxide-metal (MOM) capacitor including metal structures;
measuring a capacitance of the MOM capacitor over time;
identifying a change in the measured capacitance over time; and
identifying metal corrosion in the IC structure based on the identified change in the measured capacitance over time.
11. The method of claim 10 , comprising measuring the capacitance and a breakdown voltage of the MOM capacitor over time, and identifying changes in the measured capacitance and the measured breakdown voltage over time.
12. The method of claim 10 , wherein forming the MOM capacitor comprises:
forming copper structures including elongated copper fingers spaced apart by a dielectric region; and
depositing a dielectric barrier layer on the elongated copper fingers.
13. The method of claim 10 , comprising in response to identifying the metal corrosion in the IC structure, discarding at least one device including the IC structure, or adjusting a fabrication process.