SEMICONDUCTOR DEVICE
A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.
1 . A semiconductor device, comprising:
a first semiconductor structure having a first conductivity type, and comprising a plurality of first layers and a plurality of second layers which are alternately stacked;
a second semiconductor structure located on the first semiconductor structure and having a second conductivity type opposite to the first conductivity type; and
an active layer located between the first semiconductor structure and the second semiconductor structure;
wherein the plurality of first layers and the plurality of second layers include indium and phosphorus; and
wherein the plurality of first layers has a first indium atomic percentage and the plurality of second layers has a second indium atomic percentage different from the first indium atomic percentage.
2 . The semiconductor device according to claim 1 , wherein the plurality of first layers or the plurality of second layers comprises (A x1 B 1-x1 ) 1-y1 In y1 P, wherein A and B are selected from group III elements other than indium, wherein 0≤x1≤1, and 0<y1≤1.
3 . The semiconductor device according to claim 2 , wherein A is aluminum and B is gallium, and wherein the plurality of first layers, the plurality of second layers or both comprises (Al x2 Ga 1-x2 ) 1-y1 In y1 P, wherein 0<x2<1, and 0<y1<1.
4 . The semiconductor device according to claim 2 , wherein the plurality of first layers comprises Al 1-y2 In y2 P and the plurality of second layers comprises Ga 1-y3 In y3 P, wherein 0.59<y2<0.69, 0.3<y3<0.4.
5 . The semiconductor device according to claim 4 , wherein the plurality of first layers has a first lattice constant, and the plurality of second layers has a second lattice constant different from the first lattice constant.
6 . The semiconductor device according to claim 2 , wherein the plurality of first layers has a first bandgap and the plurality of second layers has a second bandgap, and the active layer has a third bandgap smaller than the first bandgap and the second bandgap.
7 . The semiconductor device according to claim 2 , wherein one of the plurality of first layers has a first conduction band, and one of the plurality of second layers has a second conduction band different from the first conduction band.
8 . The semiconductor device according to claim 7 , wherein a gap of conduction band between the first conduction band and the second conduction band is in a range of 0.05 eV to 1 eV.
9 . The semiconductor device according to claim 1 , wherein the first indium atomic percentage and the second indium atomic percentage are between 30% to 70%.
10 . The semiconductor device according to claim 1 , wherein one of the plurality of first layers has a first thickness and one of the plurality of second layers has a second thickness, and the second thickness is equal to or smaller than the first thickness.
11 . The semiconductor device according to claim 10 , wherein the first thickness and the second thickness are in a range of 30 Å to 300 Å.
12 . The semiconductor device according to claim 1 , wherein the second semiconductor structure includes a plurality of third layers and a plurality of fourth layers which are alternately stacked.
13 . The semiconductor device according to claim 12 , wherein the plurality of third layers and the plurality of fourth layers include indium and phosphorus; and
wherein the plurality of third layers has a third indium atomic percentage and the plurality of fourth layers has a fourth indium atomic percentage different from the third indium atomic percentage.
14 . The semiconductor device according to claim 13 , wherein the plurality of third layers or the plurality of fourth layers comprises Al 1-y4 In y4 P, wherein 0<y4<1.
15 . The semiconductor device according to claim 12 , wherein the plurality of third layers or the plurality of fourth layers comprises In y5 C 1-y5 Sb x3 D 1-x3 ; and
wherein C is selected from group III elements other than indium, and D is selected from group V elements other than antimony, and 0≤x3≤1, and 0<y5≤1.
16 . The semiconductor device according to claim 12 , wherein one of the plurality of third layers has a third conduction band, and one of the plurality of fourth layers has a fourth conduction band different from the third conduction band.
17 . The semiconductor device according to claim 16 , wherein a gap of the conduction band between the third conduction band and the fourth conduction band is in a range of 0.05 eV to 1 eV.
18 . The semiconductor device according to claim 1 , further comprising a base connecting to the second semiconductor structure and a bonding structure located between the second semiconductor structure and the base.
19 . The semiconductor device according to claim 18 , further comprising a reflecting structure located between the second semiconductor structure and the bonding structure.
20 . The semiconductor device according to claim 18 , further comprising an insulating structure and a conductive structure, the insulating structure connecting the second semiconductor structure and including a plurality of holes, the conductive structure disposed between the insulating structure and the bonding structure and connected to the second semiconductor structure through the plurality of holes.