IP Library Granted Patent US 12,568,838
Granted Patent B2
US 12,568,838 · App. 18/244,185 · Granted Mar 3, 2026

Base plate having sidewall, power semiconductor module comprising the base plate and method for producing the base plate

Inventors: Biwei Zhang (Lenzburg, CH); Harald Beyer (Lenzburg, CH); Milad Maleki (Untersiggenthal, CH); Dominik Truessel (Bremgarten, CH); Maxime Ludwig (Zürich, CH)
Assignee: HITACHI ENERGY LTD
H01L23/13H01L24/26H01L24/32H01L23/3121H01L23/367H01L2224/26175H01L2224/32225H01L2224/32245
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Quick Facts
Patent No.
US 12,568,838
App. No.
18/244,185
Granted
Mar 3, 2026
Kind
B2
Abstract

A base plate and power semiconductor module are provided, involving a basic body formed in one piece and having a front and rear side. The front side has a mounting area of the base plate. Along at least one of its edges, the basic body has at least one elevated integral part forming at least one sidewall projecting beyond the mounting area by a vertical height. At mounting area regions, the basic body has vertical thickness extending between the front and rear side and being larger than the vertical height of the sidewall. Along all edges, the basic body involves either at least one sidewall or at least one groove, but not both, at the same edge. Along at least one of its edges, the basic body involves one elevated integral part forming the at least one sidewall.

Claims (28)

1 . A base plate for a power semiconductor module, wherein the base plate comprises:

a basic body formed in one piece, the basic body has a front side and a rear side, the front side comprising a mounting area of the base plate, along at least one of its edges, the basic body has at least one elevated integral part forming at least one sidewall projecting beyond the mounting area by a vertical height, at regions of the mounting area, the basic body has a vertical thickness extending between the front side and the rear side, the vertical thickness being larger than the vertical height of the sidewall, and

wherein along all edges, the basic body comprises either at least one sidewall or at least one groove but not both sidewall and groove at a same edge, wherein along at least one of its edges, the basic body comprises one elevated integral part forming the at least one sidewall.

2 . The base plate according to claim 1 , wherein the elevated integral part forms at least two sidewalls projecting beyond the mounting area, and the least two sidewalls are located along two non-adjacent or opposite edges of the basic body.

3 . The base plate according to claim 1 , wherein the basic body comprises two sidewalls located at two opposite edges and two grooves located at two another edges of the basic body.

4 . The base plate according to claim 1 , wherein the at least one sidewall has a vertical height between 0.05 mm and 5.0 mm inclusive and an average lateral width between 0.05 mm and 10 mm inclusive.

5 . The base plate according to claim 1 , comprising a plurality of cooling fins on the rear side.

6 . The base plate according to claim 1 , wherein the at least one groove extends along at least one of the edges of the basic body, wherein along a lateral direction, the mounting area is delimited by the groove.

7 . The base plate according to claim 1 , wherein the at least one sidewall is a vertical wall.

8 . The base plate according to claim 1 , wherein the at least one sidewall is an inclined wall.

9 . The base plate according to claim 1 , wherein the at least one sidewall is a round-shaped wall.

10 . The base plate according to claim 1 , wherein the at least one sidewall is formed partially as vertical wall and partially as inclined wall.

11 . The base plate according to claim 1 , the at least one sidewall is formed partially as vertical wall and partially as round-shaped wall.

12 . The base plate according to claim 1 , wherein the base plate is part of the power semiconductor module, the power semiconductor module comprising a housing body, wherein the housing body laterally surrounds the base plate, and the sidewall is covered by the housing body and serves as an anchoring structure which additionally fixes the housing body to the base plate.

13 . A power semiconductor module comprising:

a base plate comprising:

a basic body formed in one piece, the basic body has a front side and a rear side, the front side comprising a mounting area of the base plate, along at least one of its edges, the basic body has at least one elevated integral part forming at least one sidewall projecting beyond the mounting area by a vertical height, at regions of the mounting area, the basic body has a vertical thickness extending between the front side and the rear side, the vertical thickness being larger than the vertical height of the sidewall, and

wherein along all edges, the basic body comprises either at least one sidewall or at least one groove but not both sidewall and groove at a same edge, wherein along at least one of its edges, the basic body comprises one elevated integral part forming the at least one sidewall; and

a housing body, wherein the housing body laterally surrounds the base plate, and wherein the sidewall is covered by the housing body and the at least one groove is at least partially filled by a material of the housing body so that both the sidewall and the groove serve as anchoring structures which additionally fix the housing body to the base plate.

14 . The power semiconductor module according to claim 13 , further comprising a module component, wherein the module component is fixed on the mounting area by a connection layer, and

the housing body laterally surrounds the module component.

15 . The power semiconductor module according to claim 14 ,

wherein the sidewall and/or the groove are/is formed to prevent material of the connection layer from creeping towards an assembly surface.

16 . The base plate according to claim 1 , wherein the at least one sidewall has an inner surface facing the mounting area, and the inner surface is inclined at an angle between 20° and 70° with respect to the mounting area.

17 . The base plate according to claim 1 , wherein the at least one groove has inner vertical surfaces which form an angle of 90° with respect to the mounting area.

18 . The base plate according to claim 1 , wherein the basic body comprises exactly two sidewalls located along two opposite edges and exactly two grooves located along two other opposite edges of the basic body.

19 . The base plate according to claim 1 , wherein the at least one sidewall extends along an entire edge of the basic body.

20 . The base plate according to claim 1 , wherein the at least one sidewall is spaced apart from a corresponding side surface of the basic body.

Assignments (3)
MERGER Recorded Nov 13, 2023
From: HITACHI ENERGY SWITZERLAND AG
To: HITACHI ENERGY LTD
Reel/Frame 065548/0918 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2023
From: ZHANG, BIWEI; BEYER, HARALD; MALEKI, MILAD; TRUESSEL, DOMINIK; LUDWIG, MAXIME
To: ABB POWER GRIDS SWITZERLAND AG
Reel/Frame 064858/0113 →
CHANGE OF NAME Recorded Sep 11, 2023
From: ABB POWER GRIDS SWITZERLAND AG
To: HITACHI ENERGY SWITZERLAND AG
Reel/Frame 064858/0142 →
Priority Claims (1)
EP 21161711 · Mar 10, 2021 · regional
Continuity (2)
Continuation PCTEP2022052332 · Feb 1, 2022
Related Publication 20230420315A1 · Dec 28, 2023
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