Granted Patent B2

US 12,447,721 · App. 18/252,106 · Granted Oct 21, 2025

Inventors: Lisa Schmadtke (Würselen, DE); Stephan Gillessen (Alsdorf, DE); Jefferson Do Rosario (Aachen, DE); Jan Hagen (Bonn, DE)

Assignee: SAINT-GOBAIN SEKURIT FRANCE

B32B17/10229B32B17/10036B32B17/1011B32B2307/202B32B2307/204B32B2307/402B32B2307/418B32B2307/7376

Abstract

Claims (48)

1. A projection assembly for a head-up display (HUD), comprising:

a windshield, comprising an outer pane and an inner pane that are joined to one another via a thermoplastic intermediate layer, having a HUD region; and

a projector that is directed at the HUD region and that is adapted to emit p-polarized radiation;

wherein

a reflection coating is arranged on a surface of the outer pane or of the inner pane facing the thermoplastic intermediate layer or within the thermoplastic intermediate layer, which reflection coating is suitable for reflecting p-polarized radiation and which has exactly one electrically conductive layer based on silver;

an emissivity-reducing coating is arranged on a surface of the inner pane facing away from the thermoplastic intermediate layer, which emissivity-reducing coating has an electrically conductive layer based on a transparent conductive oxide,

wherein the emissivity-reducing coating comprises

a blocking layer against alkali diffusion with a refractive index of at least 1.9,

above the blocking layer, a dielectric lower antireflection layer with a refractive index from 1.3 to 1.8,

above the dielectric lower antireflection layer, the electrically conductive layer,

above the electrically conductive layer, a dielectric barrier layer for regulating oxygen diffusion with a refractive index of at least 1.9, and

above the dielectric barrier layer, a dielectric upper antireflection layer with a refractive index from 1.3 to 1.8.

2. The projection assembly according to claim 1 , wherein the reflection coating is implemented such that

below the electrically conductive layer, a lower dielectric layer or lower dielectric layer sequence is arranged, whose refractive index is at least 1.9, and

above the electrically conductive layer, an upper dielectric layer or upper dielectric layer sequence is arranged, whose refractive index at least 1.9,

wherein a ratio of an optical thickness of the upper dielectric layer or upper dielectric layer sequence to an optical thickness of the lower dielectric layer or lower dielectric layer sequence is at least 1.7.

3. The projection assembly according to claim 2 , wherein the optical thickness of the upper dielectric layer or upper dielectric layer sequence is from 100 nm to 200 nm and the optical thickness of the lower dielectric layer or lower dielectric layer sequence is from 50 nm to 120 nm.

4. The projection assembly according to claim 1 , wherein the electrically conductive layer of the reflection coating has a geometric thickness from 10 nm to 14 nm.

5. The projection assembly according to claim 1 , wherein

below the electrically conductive layer of the reflection coating, a first lower dielectric layer, a second lower dielectric layer, and a third lower dielectric layer, with a refractive index of at least 1.9 are arranged, and/or

above the electrically conductive layer of the reflection coating, a first upper dielectric layer, a second upper dielectric layer, and a third upper dielectric layer, with a refractive index of at least 1.9 are arranged.

6. The projection assembly according to claim 5 , wherein the reflection coating comprises the following layers:

an antireflection layer based on silicon nitride with a thickness from 20 nm to 30 nm,

above the antireflection layer, a refractive-index-enhancing layer based on mixed silicon-zirconium nitride or mixed silicon-hafnium nitride with a thickness from 8 nm to 12 nm,

above the refractive-index-enhancing layer, a matching layer based on zinc oxide with a thickness from 8 nm to 12 nm,

above the matching layer, the electrically conductive layer with a thickness from 11 nm to 13 nm,

above the electrically conductive layer, a blocking layer based on Ti or NiCr with a thickness from 0.1 nm to 0.5 nm,

above the blocking layer, an upper matching layer based on zinc oxide with a thickness from 8 nm to 12 nm,

above the upper matching layer, an upper refractive-index-enhancing layer based on mixed silicon-zirconium nitride or mixed silicon-hafnium nitride with a thickness from 8 nm to 12 nm, and

above the upper refractive-index-enhancing layer, an upper antireflection layer based on silicon nitride with a thickness from 60 nm to 70 nm.

7. The projection assembly according to claim 5 , wherein

the first lower dielectric layer is based on silicon nitride, the second lower dielectric layer is based on zinc oxide, and the third lower dielectric layer is based on a mixed silicon-metal nitride, and/or

the first upper dielectric layer is based on silicon nitride, the second upper dielectric layer is based on zinc oxide, and the third upper dielectric layer is based on a mixed silicon-metal nitride.

8. The projection assembly according to claim 7 , wherein the third lower dielectric layer is a mixed silicon-zirconium nitride layer or a mixed silicon-hafnium nitride layer and/or the third upper dielectric layer is a mixed silicon-zirconium nitride layer or mixed silicon-hafnium nitride layer.

9. The projection assembly according to claim 1 , wherein the reflection coating includes at least one metallic blocking layer that is arranged directly above and/or below the electrically conductive layer and has a geometric thickness of less than 1 nm.

10. The projection assembly according to claim 1 , wherein the electrically conductive layer of the emissivity-reducing coating is based on indium tin oxide and has a thickness from 50 nm to 130 nm.

11. The projection assembly according to claim 10 , wherein the thickness is from 60 nm to 100 nm.

12. The projection assembly according to claim 1 , wherein

the lower antireflection layer and the upper antireflection layer are based on an oxide,

the lower antireflection layer has a thickness from 5 nm to 50 nm, and

the upper antireflection layer has a thickness from 10 nm to 100 nm.

13. The projection assembly according to claim 12 , wherein the lower antireflection layer and the upper antireflection layer are based on a silicon oxide.

14. The projection assembly according to claim 1 , wherein the barrier layer is based on a nitride or a carbide, and has a thickness from 5 nm to 20 nm.

15. The projection assembly according to claim 14 , wherein the nitride is silicon nitride and the carbide is silicon carbide.

16. The projection assembly according to claim 1 , wherein the blocking layer is based on a nitride, and has a thickness from 10 nm to 50 nm.

17. The projection assembly according to claim 1 , wherein the windshield has a region, in which the thermoplastic intermediate layer is tinted or colored.

18. The projection assembly according to claim 1 , wherein the outer pane is tinted or colored and has light transmittance of at least 80%.

19. The projection assembly according to claim 1 , wherein external surfaces of the windshield are arranged substantially parallel to one another.

Assignments (2)

Priority Claims (1)

Continuity (1)

References Cited (29)