Methods and apparatus for integrating diamond with LED towards on-chip quantum sensing
A small volume optoelectronic chip contains an LED chip with a diamond having nitrogen-vacancy centers embedded therein. The LED chip generates light having a first wavelength, and the diamond with nitrogen-vacancy centers generates light having a second wavelength after excitement with light having the first wavelength. The diamond may also be on or adjacent the LED.
1 . An optoelectronic chip, comprising:
an LED chip having embedded therein a diamond with nitrogen-vacancy centers, wherein the LED chip generates light having a first wavelength, and the diamond with nitrogen-vacancy centers generates light having a second wavelength after excitement with light having the first wavelength.
2 . The optoelectronic chip according to claim 1 , wherein the LED chip is a GaN LED chip.
3 . The optoelectronic chip according to claim 1 , wherein the diamond with nitrogen-vacancy centers comprises bulk diamond or diamond nanoparticles.
4 . The optoelectronic chip according to claim 3 , wherein the diamond nanoparticles are comprised within an optical adhesive glue.
5 . The optoelectronic chip according to claim 1 having a size of 100 mm 3 or less.
6 . The optoelectronic chip according to claim 1 having a size of 10 mm 3 or less.
7 . The optoelectronic chip according to claim 1 having a size of 1 mm 3 or less.
8 . The optoelectronic chip according to claim 1 , wherein the LED chip is a GaN LED chip, and the first wavelength is from 375 nm to 521 nm.
9 . The optoelectronic chip according to claim 1 , wherein the LED chip is a GaN LED chip, and the first wavelength is from 375 nm to 521 nm, and the second wavelength is from 625 nm to 700 nm.
10 . A quantum sensing device, comprising:
an LED chip;
a diamond with nitrogen-vacancy centers embedded in the LED chip, wherein the LED chip generates light having a first wavelength, and the diamond with nitrogen-vacancy centers generates light having a second wavelength after excitement with light having the first wavelength;
a microwave antenna, one side of the microwave antenna adjacent the LED chip;
a photodiode on another side of the microwave antenna; and
a light modulator between the LED chip and the diamond.
11 . The quantum sensing device according to claim 10 , wherein the diamond with nitrogen-vacancy centers is embedded in the LED chip.
12 . The quantum sensing device according to claim 10 , wherein the diamond with nitrogen-vacancy centers is adjacent to a first surface of the LED chip, and the microwave antenna is adjacent to a second surface of the LED chip.
13 . The quantum sensing device according to claim 10 , wherein the LED chip is a GaN LED chip.
14 . The quantum sensing device according to claim 10 having a size of 100 mm 3 or less.