LAYERED BODY HAVING FUNCTION AS TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR PRODUCING SAME, AND OXIDE SPUTTERING TARGET FOR SAID LAYERED BODY PRODUCTION
Provided is a layered body having lower resistivity (higher conductivity) and higher transmittance than conventional ITO films. A layered body obtained by layering an ITO film and an oxide film, wherein the layered body has a surface resistance of 40 Ω/sq. or less and a visible light average transmittance of 90% or higher, and a ratio of a film thickness of the ITO film and a film thickness of the oxide film (film thickness of the ITO film/film thickness of the oxide film) is less than 15. A layered body obtained by layering an ITO film and an oxide film, wherein R2/R1≤1.0 is satisfied when a surface resistance of the layered body that underwent atmosphere annealing at 220° C. is R1, and a surface resistance of the layered body that underwent atmosphere annealing at 550° C. is R2.
1 : A layered body obtained by layering an ITO film and an oxide film, wherein the layered body has a surface resistance of 40 Ω/sq. or less and a visible light average transmittance of 90% or higher, and a ratio of a film thickness of the ITO film and a film thickness of the oxide film (film thickness of the ITO film/film thickness of the oxide film) is less than 15.
2 : A layered body obtained by layering an ITO film and an oxide film, wherein R2/R1≤1.0 is satisfied when a surface resistance of the layered body that underwent atmosphere annealing at 220° C. is R1, and a surface resistance of the layered body that underwent atmosphere annealing at 550° C. is R2.
3 : The layered body according to claim 2 , wherein a ratio of the surface resistance R1 and the surface resistance R2 is R2/R1≤0.5.
4 : The layered body according to claim 2 , wherein the visible light average transmittance of the layered body that underwent atmosphere annealing at 220° C. is 85% or higher.
5 : The layered body according to claim 2 , wherein the visible light average transmittance of the layered body that underwent atmosphere annealing at 550° C. is 90% or higher.
6 : The layered body according to claim 2 , wherein n1>n2 is satisfied when a refractive index of the ITO film is n1, and a refractive index of the oxide film is n2.
7 : The layered body according to claim 2 , wherein the oxide film includes one of more types among Zn, Ga, and Si.
8 : A layered body obtained by layering an ITO film and an oxide film, wherein the oxide film contains Zn in an amount of 0 mol % or more and less than 69 mol % in terms of ZnO, Ga in an amount of 9 mol % or more and 100 mol % or less in terms of Ga 2 O 3 , and Si in an amount of 0 mol % or more and less than 60 mol % in terms of SiO 2 , a film thickness of the oxide film is less than 90 nm, and a ratio of a film thickness of the ITO film and a film thickness of the oxide film (film thickness of the ITO film/film thickness of the oxide film) is less than 15.
9 : The layered body according to claim 8 , wherein the oxide film contains Zn in an amount of more than 10 mol % and less than 60 mol % in terms of ZnO, Ga in an amount of 10 mol % or more and 60 mol % or less in terms of Ga 2 O 3 , and Si in an amount of 25 mol % or more and less than 50 mol % in terms of SiO 2 .
10 : The layered body according to claim 8 , wherein the oxide film is amorphous.
11 : A method of producing the layered body according to claim 8 , wherein an oxide film is layered on an ITO film, and the obtained layered body is annealed at 200° C. or higher.
12 : An oxide sputtering target for producing the layered body according to claim 8 , wherein the oxide sputtering target contains Zn in an amount of 0 mol % or more and less than 69 mol % in terms of ZnO, Ga in an amount of 9 mol % or more and 100 mol % or less in terms of Ga 2 O 3 , and Si in an amount of 0 mol % or more and less than 60 mol % in terms of SiO 2 .
13 : The oxide sputtering target according to claim 12 , wherein the oxide sputtering target contains Zn in an amount of more than 10 mol % and less than 60 mol % in terms of ZnO, Ga in an amount of 10 mol % or more and 60 mol % or less in terms of Ga 2 O 3 , and Si in an amount of 25 mol % or more and less than 50 mol % in terms of SiO 2 .
14 : The oxide sputtering target according to claim 12 , wherein the oxide sputtering target contains, as a sintering additive, one or more types among B 2 O 3 , P 2 O 5 , V 2 O 5 , Sb 2 O 3 , TeO 2 , Tl 2 O 3 , PbO, Bi 2 O 3 , and MoO 3 .
15 : The layered body according to claim 2 , wherein the oxide film is amorphous.
16 : The layered body according to claim 1 , wherein the oxide film is amorphous.
17 : A method of producing the layered body according to claim 1 , wherein an oxide film is layered on an ITO film, and the obtained layered body is annealed at 200° ° C. or higher.
18 : The layered body according to claim 1 , wherein n1>n2 is satisfied when a refractive index of the ITO film is n1, and a refractive index of the oxide film is n2.
19 : The layered body according to claim 1 , wherein the oxide film includes one of more types among Zn, Ga, and Si.