Materials for stabilizing semiconductors and methods of making the same
View Patent ↗The present disclosure relates to a device that includes a first layer having an active material and a stabilizing material, where the active material includes a semiconductor, the stabilizing material includes at least one of an oligomer, an elastomer, a polymer, and/or a resin, and the stabilizing material provides to the device an improved performance metric compared to a device constructed of the first layer but constructed of only the active material (i.e., in the absence of the stabilizing material).
1. A method comprising:
applying a liquid precursor of a stabilizing material to a surface of a device comprising:
a first layer comprising a perovskite; and
a second layer comprising a charge transport layer;
treating the liquid precursor and the device, resulting in the liquid precursor penetrating at into the first layer and the second layer; and
curing the liquid precursor, resulting in the converting of the liquid precursor to the stabilizing material in a solid form positioned within the first layer and the second layer, wherein:
the second layer is in physical contact with the first layer,
the stabilizing material comprises at least one of an oligomer, an elastomer, a polymer, or a resin, and
the stabilizing material is present in the first layer at a concentration between 0.0001 wt % and 1.0 wt %.
2. The method of claim 1 , wherein the liquid precursor has a viscosity between 0.5 cP and 10000 cP.
3. The method of claim 1 , wherein the liquid precursor has a surface tension between 15 mN/m and 40 mN/m.
4. The method of claim 1 , wherein the liquid precursor has an average molecular weight between 154 g/mol and 100,000 g/mol.
5. The method of claim 1 , wherein the applying is performed at a temperature between 20° C. and 50° C.
6. The method of claim 1 , wherein the treating is performed for a period of time between 30 seconds and 5 days.
7. The method of claim 1 , wherein the treating is performed using a centrifuge.
8. The method of claim 6 , wherein the period of time is between 30 seconds and 1 hour.
9. The method of claim 1 , wherein the curing is performed at a temperature between 20° C. and 50° C.
10. The method of claim 9 , wherein the curing is performed at about ambient temperature.
11. The method of claim 1 , wherein the polymer comprises at least one of a siloxane, a polyethylene, a polyvinylidene difluoride, or a polyepoxide.
12. The method of claim 11 , wherein the siloxane further comprises at least one of an alkyl group, a hydrogen atom, a halogen atom, an aromatic group, a siloxy group, an acrylate, an epoxy group, or a carbonate group.
13. The method of claim 12 , wherein the alkyl group comprises at least one of a methyl group, an ethyl group, a propyl group, or a butyl group.
14. The method of claim 12 , wherein the aromatic group comprises at least one of an aryl group, a phenyl group, or a benzyl group.
15. The method of claim 11 , wherein the siloxane comprises a polydimethylsiloxane.