Non-equilateral triangular grid radiating element and array of same
A radiating element including: Higher order Floquet Structure (HOFS) layers comprising a top PCB metal layer, a mid PCB metal layer, and a low PCB metal layer; component layers comprising electronics to connect to the HOFS layers; and a unit cell constructively defined by the HOFS layers, wherein the unit cell is capable of operating as a transceiver, the unit cell has an operating range of 10.7 GHz to 14.5 GHz, and an area of the unit cell is 0.3125λ 2 .
1 . A radiating element comprising:
Higher order Floquet Structure (HOFS) layers comprising a top PCB metal layer, a mid PCB metal layer, and a low PCB metal layer;
component layers comprising electronics to connect to the HOFS layers; and
a unit cell constructively defined by the HOFS layers,
wherein the unit cell is capable of operating as a transceiver, the unit cell has an operating range of 10.7 GHz to 14.5 GHZ, and an area of the unit cell is 0.3125 λ 2 .
2 . The radiating element of claim 1 , wherein each of the top PCB metal layer, the mid PCB metal layer and the low PCB metal layer comprises a feature trace and gap widths of about 6 mils or greater.
3 . The radiating element of claim 1 , wherein each of the HOFS layers comprises a substrate having a dielectric constant ranging from 3.0 to 3.7.
4 . The radiating element of claim 3 , wherein the substrate comprises a Rogers 4835 material.
5 . The radiating element of claim 3 , wherein the substrate comprises a low loss FR-4 material.
6 . The radiating element of claim 1 , wherein the component layers and the HOFS layers are affixed to each other with an adhesive.
7 . The radiating element of claim 1 , wherein the unit cell is configured to operate with a scan angle θ from 0° to 50° and a o scan angle from 0° and 360°.
8 . The radiating element of claim 1 , wherein the component layers and the HOFS layers jointly have a cross-section depth between 100 mils and 450 mils.
9 . The radiating element of claim 1 , wherein the radiating element comprises a plurality of radiating elements and the plurality of radiating elements are disposed in a non-equilateral triangular lattice.
10 . The radiating element of claim 9 , wherein the plurality of radiating elements are formed by symmetrical metal layers about a vertical axis and a horizontal axis, and the symmetrical metal layers constructively form the non-equilateral triangular lattice.
11 . The radiating element of claim 10 , wherein each of the plurality of radiating elements is configured to operate with a scan angle θ from 0° to 50° and a φ scan angle from 0° and 360°.
12 . The radiating element of claim 10 , wherein each of the HOFS layers comprises a substrate having a dielectric constant ranging from 3.0 to 3.7.
13 . An array comprising:
radiating elements, wherein each radiating element comprises:
Higher order Floquet Structure (HOFS) layers comprising a top PCB metal layer, a mid PCB metal layer, and a low PCB metal layer;
component layers comprising electronics to connect to the HOFS layers; and
a unit cell constructively defined by the HOFS layers,
wherein the unit cell is capable of operating as a transceiver, the unit cell has an operating range of 10.7 GHz to 14.5 GHZ, and an area of the unit cell is 0.3125 λ 2 .
14 . The array of claim 13 , wherein each of the HOFS layers comprises a substrate having a dielectric constant ranging from 3.0 to 3.7.
15 . The array of claim 14 , wherein the substrate comprises a Rogers 4835 material.
16 . The array of claim 14 , wherein the substrate comprises a low loss FR-4 material.
17 . The array of claim 13 , wherein each of the component layers and the HOFS layers jointly have a cross-section depth between 100 mils and 450 mils.
18 . The array of claim 13 , wherein the radiating elements are disposed in a non-equilateral triangular lattice.
19 . The array of claim 13 , wherein the radiating elements are formed by symmetrical metal layers about a vertical axis and a horizontal axis, and the symmetrical metal layers constructively form the non-equilateral triangular lattice.
20 . The radiating element of claim 13 , wherein each of the radiating elements is configured to operate with a scan angle θ from 0° to 50° and a φ scan angle from 0° and 360°.