Spark gap structures for detection and protection against electrical overstress events
The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.
1. An electrical overstress (EOS) monitor and/or protection device comprising a pair of conductive structures having arcing tips configured to electrically arc in an arcing direction in response to an EOS event in a packaged semiconductor die, wherein the arcing tips facing each other have substantially flat arcing surfaces extending in a direction crossing the arcing direction.
2. The EOS monitor and/or protection device of claim 1 , wherein the conductive structures are fabricated on a semiconductor substrate using a semiconductor fabrication process.
3. The EOS monitor and/or protection device of claim 2 , wherein the conductive structures are lithographically patterned.
4. The EOS monitor and/or protection device of claim 1 , wherein the conductive structures have polygonal shapes having sides that form the substantially flat and straight edges.
5. The EOS monitor and/or protection device of claim 4 , wherein one or both of the conductive structures have a rectangular shape.
6. The EOS monitor and/or protection device of claim 1 , wherein the conductive structures are formed on a substrate having a horizontal main surface and the arcing tips are separated in the arcing direction crossing the horizontal main surface.
7. The EOS monitor and/or protection device of claim 6 , wherein the conductive structures are fabricated using a semiconductor fabrication process at one or more of metallization layers forming part of a back end of line of an integrated circuit device.
8. The EOS monitor and/or protection device of claim 7 , wherein the conductive structures serve as a shunt current path between a core circuit of the integrated circuit device protected by the EOS monitor and/or protection device and a ground in response to the EOS event.
9. An electrical overstress (EOS) monitor and/or protection device comprising a pair of conductive structures having arcing tips configured to electrically arc in response to an EOS event in a packaged semiconductor die, wherein the arcing tips facing each other have different shapes.
10. The EOS monitor and/or protection device of claim 9 , wherein the conductive structures are fabricated on a semiconductor substrate using a semiconductor fabrication process.
11. The EOS monitor and/or protection device of claim 9 , wherein one of the conductive structures has a sharpened tip facing the other of the conductive structures.
12. The EOS monitor and/or protection device of claim 9 , wherein one of the conductive structures has a substantially flat tip having a straight edge facing the other of the conductive structures.
13. The EOS monitor and/or protection device of claim 12 , wherein the one of the conductive structures has a polygonal shape, and wherein a side of the polygonal shape forms the straight edge.
14. The EOS monitor and/or protection device of claim 10 , wherein the semiconductor substrate has a horizontal main surface and the arcing tips are separated in an arcing direction crossing the horizontal main surface.
15. The EOS monitor and/or protection device of claim 10 , wherein the conductive structures are formed as part of one or more metallization layers, and wherein the arcing tips are separated by an intermetal dielectric layer serving as an arcing medium.
16. An electrical overstress (EOS) monitor and/or protection device comprising a pair of conductive structures having arcing tips configured to electrically arc in response to an EOS event in a packaged semiconductor die, wherein the arcing tips comprise a refractory metal selected from the group consisting of W, Ti, Ta, Ir, Ru, Rh and Cr.
17. The EOS monitor and/or protection device of claim 16 , wherein the conductive structures are integrated on a semiconductor substrate using a semiconductor fabrication process.
18. The EOS monitor and/or protection device of claim 17 , wherein the conductive structures are formed as part of one or more metallization layers, and wherein the arcing tips are separated by an intermetal dielectric layer serving as an arcing medium.
19. The EOS monitor and/or protection device of claim 17 , wherein the semiconductor substrate has a horizontal main surface and the arcing tips are separated in a vertical direction crossing the horizontal main surface.
20. The EOS monitor and/or protection device of claim 17 , wherein the conductive structures are formed at one or more metallization layers separated by one or more intermetal dielectric layers within a back end of line of an integrated circuit device.