Manufacturing method of display device and evaporation device
According to one embodiment, a manufacturing method of a display device includes preparing a processing substrate, forming an organic layer, and forming an etching stopper layer on the organic layer. The forming the etching stopper layer includes carrying the processing substrate into a chamber, inside the chamber, emitting a material for forming the etching stopper layer from an evaporation source which inclines with respect to a normal of the processing substrate, and conveying the processing substrate while rotating the processing substrate in a plane orthogonal to the normal, and depositing the material emitted from the evaporation source on the processing substrate.
1 . A manufacturing method of a display device, comprising:
preparing a processing substrate by forming a lower electrode above a substrate, forming a rib comprising an aperture overlapping the lower electrode, and forming a partition including a lower portion located on the rib and an upper portion located on the lower portion and protruding from a side surface of the lower portion;
forming an organic layer on the lower electrode in the aperture; and
forming an etching stopper layer on the organic layer, wherein
the forming the etching stopper layer includes:
carrying the processing substrate into a chamber;
inside the chamber, emitting a material for forming the etching stopper layer from an evaporation source which inclines with respect to a normal of the processing substrate; and
conveying the processing substrate while rotating the processing substrate in a plane orthogonal to the normal, and depositing the material emitted from the evaporation source on the processing substrate.
2 . The method of claim 1 , wherein
the processing substrate is conveyed while the processing substrate is rotated 360° inside the chamber.
3 . The method of claim 1 , wherein
the processing substrate is conveyed while the processing substrate is rotated 180° inside the chamber.
4 . The method of claim 1 , wherein
an upper electrode is formed on the organic layer as the etching stopper layer.
5 . The method of claim 4 , further comprising:
forming a cap layer on the etching stopper layer;
forming a sealing layer on the cap layer;
forming a patterned resist on the sealing layer; and
applying dry etching to the sealing layer using the resist as a mask, wherein
when the dry etching is applied to the sealing layer, an etching rate of the etching stopper layer is less than an etching rate of the sealing layer.
6 . The method of claim 5 , wherein
the rib and the sealing layer are formed of silicon nitride.
7 . The method of claim 6 , wherein
the upper electrode is formed of an alloy of magnesium and silver.
8 . The method of claim 1 , further comprising:
forming an upper electrode on the organic layer;
forming a transparent layer on the upper electrode;
forming an inorganic layer as the etching stopper layer on the transparent layer;
forming a sealing layer on the inorganic layer;
forming a patterned resist on the sealing layer; and
applying dry etching to the sealing layer using the resist as a mask, wherein
when the dry etching is applied to the sealing layer, an etching rate of the etching stopper layer is less than an etching rate of the sealing layer.
9 . The method of claim 8 , wherein
the rib and the sealing layer are formed of silicon nitride.
10 . The method of claim 9 , wherein
the inorganic layer is formed of lithium fluoride (LiF).