SEMICONDUCTOR-LAMINATED SUBSTRATE, LIGHT EMITTING COMPONENT, AND MEASUREMENT APPARATUS

1 . A semiconductor-laminated substrate comprising:

a substrate; and

a laminated structure that includes a first semiconductor laminate which is provided on the substrate and processed into a light emitting element and a second semiconductor laminate which is provided on the first semiconductor laminate and processed into at least one thyristor,

wherein the laminated structure is adjusted such that two resonant wavelengths due to an effect of the thyristor are located on both sides of a resonant wavelength of the light emitting element.

2 . The semiconductor-laminated substrate according to claim 1 ,

wherein the laminated structure is adjusted by adjusting a thickness of at least one layer of the second semiconductor laminate.

3 . The semiconductor-laminated substrate according to claim 2 ,

wherein the second semiconductor laminate includes at least an anode layer, a first gate layer, a second gate layer, and a cathode layer, and

the laminated structure is adjusted by adjusting a thickness of at least one of the anode layer or the cathode layer of the second semiconductor laminate.

4 . The semiconductor-laminated substrate according to claim 3 ,

wherein the laminated structure is adjusted by making at least one of the anode layer or the cathode layer thicker than the first gate layer and the second gate layer.

5 . The semiconductor-laminated substrate according to claim 1 ,

wherein the laminated structure includes an intermediate layer provided between the first semiconductor laminate and the second semiconductor laminate, and

the laminated structure is adjusted by adjusting a thickness of the intermediate layer.

6 . The semiconductor-laminated substrate according to claim 5 ,

wherein the intermediate layer is constituted by an n-type semiconductor.

7 . The semiconductor-laminated substrate according to claim 1 ,

wherein the laminated structure is adjusted such that the resonant wavelength of the light emitting element is located within a range of ±30% from an average of the two resonant wavelengths due to the effect of the thyristor in a case where a distance between the two resonant wavelengths due to the effect of the thyristor is 100%.

8 . A light emitting component comprising:

a substrate on which a laminated structure including a first semiconductor laminate and a second semiconductor laminate overlapping with the first semiconductor laminate is formed;

at least one light emitting element that is constituted by the first semiconductor laminate; and

at least one thyristor that is constituted by the second semiconductor laminate and that causes the light emitting element to emit light or increase an amount of light emitted by turning on the light emitting element,

wherein the laminated structure is adjusted such that two resonant wavelengths due to an effect of the thyristor are located on both sides of a resonant wavelength of the light emitting element.

9 . A measurement apparatus comprising:

a substrate on which a laminated structure including a first semiconductor laminate and a second semiconductor laminate overlapping with the first semiconductor laminate is formed;

a light emitting unit that has at least one light emitting element constituted by the first semiconductor laminate;

a driving unit that includes at least one thyristor constituted by the second semiconductor laminate and drives the light emitting element; and

a measurement unit that performs measurement on a target object on the basis of light emitted from the light emitting unit and reflected by the target object,

wherein the laminated structure is adjusted such that two resonant wavelengths due to an effect of the thyristor are located on both sides of a resonant wavelength of the light emitting element.