Tungsten oxide nanostructure thin films for electrochromic devices
A method of manufacturing a thin film is provided. The method includes providing a plurality of crystalline hexagonal tungsten trioxide particles, size-reducing the crystalline hexagonal tungsten trioxide particles by grinding to produce crystalline hexagonal tungsten trioxide nanostructures, and coating the crystalline hexagonal tungsten trioxide nanostructures onto a substrate to produce a thin film. An electrochromic multi-layer stack is also provided.
1. An electrochromic multi-layer stack comprising:
a substrate comprising a material with a melting point, a glass transition temperature, or a softening point less than 400° C.;
an electrically conductive layer on the substrate; and
an electrochromic cathode layer on the electrically conductive layer, wherein the electrochromic cathode layer comprises crystalline tungsten trioxide nanostructures, wherein the crystalline tungsten trioxide nanostructures have a mean size or a median size from 50 nm to 300 nm.
2. The electrochromic multi-layer stack of claim 1 , wherein the crystalline tungsten trioxide nanostructures comprise hexagonal tungsten trioxide nanostructures, or substituted hexagonal tungsten trioxide nanostructures.
3. The electrochromic multi-layer stack of claim 1 , wherein the tungsten trioxide nanostructures comprise crystalline pyrochlore tungsten trioxide nanostructures, or substituted pyrochlore tungsten trioxide nanostructures.
4. The electrochromic multi-layer stack of claim 1 , wherein the crystalline tungsten trioxide nanostructures comprise monoclinic tungsten trioxide nanostructures, or substituted monoclinic tungsten trioxide nanostructures.
5. The electrochromic multi-layer stack of claim 1 , wherein the crystalline tungsten trioxide nanostructures comprise tetragonal tungsten trioxide nanostructures, or substituted tetragonal tungsten trioxide nanostructures.
6. The electrochromic multi-layer stack of claim 1 , wherein the crystalline tungsten trioxide nanostructures comprise A y W 1-x M x O 3±z .kH 2 O, wherein A is a monovalent species, M is a transition metal, x is from 0 to 1, y is from above 0 to 0.5, and z is from −0.5 to 0.5.
7. The electrochromic multi-layer stack of claim 1 , wherein the electrochromic multi-layer stack is incorporated into an electrochromic device.
8. The electrochromic multi-layer stack of claim 1 , wherein the electrically conductive layer is selected from: transparent conductive oxides, thin metallic coatings, networks of conductive nanoparticles, conductive metal nitrides, and composite conductors.
9. The electrochromic multi-layer stack of claim 1 , wherein the substrate comprises one or more of polycarbonates, polyacrylics, polyurethanes, urethane carbonate copolymers, polysulfones, polyimides, polyacrylates, polyethers, polyester, polyethylenes, polyalkenes, polyimides, polysulfides, polyvinylacetates, and cellulose-based polymers.
10. A method of manufacturing an electrochromic multi-layer stack comprising:
forming an electrically conductive layer on a substrate, wherein the substrate comprises a material with a melting point, a glass transition temperature, or a softening point less than 400° C.; and
coating crystalline tungsten trioxide nanostructures onto the electrically conductive layer to produce a thin film, wherein the crystalline tungsten trioxide nanostructures have a mean size or a median size from 50 nm to 300 nm.
11. The method of claim 10 , further comprising producing the crystalline tungsten trioxide nanostructures via hydrothermal synthesis before coating onto the electrically conductive layer.
12. The method of claim 10 , wherein the crystalline tungsten trioxide nanostructures comprise hexagonal tungsten trioxide nanostructures, or substituted hexagonal tungsten trioxide nanostructures.
13. The method of claim 10 , wherein the crystalline tungsten trioxide nanostructures comprise pyrochlore tungsten trioxide nanostructures, or substituted pyrochlore tungsten trioxide nanostructures.
14. The method of claim 10 , wherein the crystalline tungsten trioxide nanostructures comprise crystalline monoclinic tungsten trioxide nanostructures, or substituted monoclinic tungsten trioxide nanostructures.
15. The method of claim 10 , wherein the crystalline tungsten trioxide nanostructures comprise tetragonal tungsten trioxide nanostructures, or substituted tetragonal tungsten trioxide nanostructures.
16. The method of claim 10 , wherein the crystalline tungsten trioxide nanostructures comprise A y W 1-x M x O 3±z .kH 2 O, wherein A is a monovalent species, M is a transition metal, x is from 0 to 1, y is from above 0 to 0.5, and z is from −0.5 to 0.5.
17. The method of claim 10 , wherein the thin film is an electrochromic cathode layer in an electrochromic device.
18. The method of claim 10 , wherein the electrically conductive layer is selected from: transparent conductive oxides, thin metallic coatings, networks of conductive nanoparticles, conductive metal nitrides, and composite conductors.
19. The method of claim 10 , wherein the substrate comprises one or more of polycarbonates, polyacrylics, polyurethanes, urethane carbonate copolymers, polysulfones, polyimides, polyacrylates, polyethers, polyester, polyethylenes, polyalkenes, polyimides, polysulfides, polyvinylacetates, and cellulose-based polymers.