YOLK CORE-SHELL STRUCTURED COMPOSITE MATERIAL, PREPARATION METHOD OF SAME, AND SECONDARY BATTERY CONTAINING SAME
This application provides a yolk core-shell structured composite material, a preparation method of the material, and a secondary battery containing the material. The yolk core-shell structured composite material includes a core and a shell. A cavity exists between the core and the shell. The core includes a phosphorus-doped silicon material, and the shell includes a nitrogen-doped carbon material. This application can improve a capacity and a capacity retention rate of the battery.
1 . A yolk core-shell structured composite material, comprising a core and a shell, and a cavity existing between the core and the shell;
wherein the core comprises a phosphorus-doped silicon material, and the shell comprises a nitrogen-doped carbon material.
2 . The yolk core-shell structured composite material according to claim 1 , wherein
Dv50 of the yolk core-shell structured composite material is 3 to 7 μm;
Dv50 of the core is 2.7 to 6.8 μm;
an average thickness of the shell is 5 to 20 nm; and
a maximum distance between an outer wall of the core and an inner wall of the shell is 5 to 300 nm.
3 . The yolk core-shell structured composite material according to claim 1 , wherein the yolk core-shell structured composite material comprises mesopores with an average pore diameter of 3 to 10 nm.
4 . The yolk core-shell structured composite material according to claim 1 , wherein
a mass percent of phosphorus in the phosphorus-doped silicon material is 0.1% to 3%; and
a mass percent of nitrogen in the nitrogen-doped carbon material is 0.1% to 2%.
5 . The yolk core-shell structured composite material according to claim 1 , wherein the silicon material is at least one selected from silicon, silicon monoxide, and silicon dioxide.
6 . A method for preparing a yolk core-shell structured composite material, wherein the yolk core-shell structured composite material comprises a core and a shell, and a cavity existing between the core and the shell, the core comprising a phosphorus-doped silicon material, and the shell comprising a nitrogen-doped carbon material, wherein the method comprises:
mixing SiO and a phosphorus source well, and then calcining the mixed product to obtain P-doped Si/SiO 2 composite particles;
applying a nitrogen source as a coating onto surfaces of the P-doped Si/SiO 2 composite particles to obtain nitrogen-coated P-doped Si/SiO 2 ;
calcining the nitrogen-coated P-doped Si/SiO 2 to obtain a P-doped Si/SiO 2 composite material that is coated with N-doped C; and
etching, by using a hydrofluoric acid solution, the P-doped Si/SiO 2 composite material that is coated with the N-doped C, to obtain a P-doped Si composite material that is coated with the N-doped C.
7 . The method according to claim 6 , wherein the phosphorus source is at least one selected from in P 2 O 5 , NaH 2 PO 2 , phytic acid, and triphenylphosphine; and the nitrogen source is at least one selected from pyrrole, melamine, urea, and dopamine.
8 . The method according to claim 6 , wherein a mass ratio between the SiO and the phosphorus source is (5 to 50): 1.
9 . The method according to claim 6 , wherein, during the calcination of the product of well mixing the SiO and the phosphorus source, a calcination temperature is 500° C. to 1200° C., a calcination time is 1 to 10 hours, and the calcination is performed in an inert atmosphere.
10 . The method according to claim 6 , wherein a ratio of an amount of substance of the nitrogen source to a mass of the P-doped Si/SiO 2 composite particles is (0.001 to 0.1) mmol: 100 mg.
11 . The method according to claim 6 , wherein the applying a nitrogen source as a coating onto surfaces of the P-doped Si/SiO 2 composite particles comprises:
adding the P-doped Si/SiO 2 composite particles and a surfactant into water;
adding a nitrogen source dispersion solution and an initiator in sequence under conditions of continuous agitation and ice bath after the surfactant is dissolved; and
keeping vibrating under a condition of ice bath.
12 . The method according to claim 10 , wherein a concentration of the nitrogen source dispersion solution is 0.01 to 1 mol/L.
13 . The method according to claim 6 , wherein, during the calcination of the nitrogen-coated P-doped Si/SiO 2 , a calcination temperature is 200° C. to 800° C., a calcination time is 1 to 5 hours, and the calcination is performed in an inert atmosphere.
14 . The method according to claim 6 , wherein a mass percent of the hydrofluoric acid solution is 5 wt % to 50 wt %.
15 . The method according to claim 6 , wherein an etching time of the etching is 5 to 60 minutes.
16 . A negative electrode material, comprising the yolk core-shell structured composite material according to claim 1 .
17 . A secondary battery, comprising the negative electrode material according to claim 16 .
18 . A battery module, comprising the secondary battery according to claim 17 .
19 . A battery pack, comprising the battery module according to claim 18 .
20 . An electrical device, comprising the battery pack according to claim 19 .