Semiconductor optical device
A semiconductor optical device includes: a mesa-stripe structure extending in a first direction; a pair of buried layers, each buried layer including a first slope surface adjacent to a top surface of the mesa-stripe structure, each buried layer including a first upright surface that stands straight from an upper end of the first slope surface, each buried layer including an upper surface higher than the top surface; an insulating film on the upper surface; and an electrode film over the top surface, the first slope surface, and the insulating film. The first upright surface has an upper end. The upper surface of at least one of the pair of buried layers has recesses. Each recess has a second slope surface that slopes downward from the upper surface. The second slope surface has an upper end that extends along a second direction perpendicular to the first direction.
1 . A semiconductor optical device comprising:
a mesa-stripe structure extending in a first direction;
a pair of buried layers configured to bury the mesa-stripe structure on both sides, each of the buried layers including a first slope surface that is adjacent to and slopes upward from a top surface of the mesa-stripe structure, each of the buried layers including a first upright surface that stands straight from an upper end of the first slope surface, each of the buried layers including an upper surface that is higher than the top surface of the mesa-stripe structure;
an insulating film on the upper surface of each of the pair of buried layers, avoiding the top surface of the mesa-stripe structure; and
an electrode film over the top surface of the mesa-stripe structure, the first slope surface, and the insulating film,
the first upright surface including an upper end that extends along the first direction,
the upper surface of at least one of the pair of buried layers including some recesses,
each of the recesses including a second slope surface that slopes downward from the upper surface,
the second slope surface including an upper end that extends along a second direction perpendicular to the first direction.
2 . The semiconductor optical device of claim 1 , wherein the electrode film includes a first portion over the first slope surface, a second portion over the second slope surface, and a first connect portion in front of the first upright surface, the first connect portion being thinner than any one of the first portion and the second portion.
3 . The semiconductor optical device of claim 2 , wherein there is a gap between the first connect portion and the first upright surface.
4 . The semiconductor optical device of claim 3 , wherein the insulating film overhangs the first upright surface.
5 . The semiconductor optical device of claim 2 , wherein
each of the recesses further includes a second upright surface,
the second upright surface has an upper end extending along the first direction,
the electrode film further includes a second connect portion in front of the second upright surface, and
the second connect portion is thinner than any one of the first portion and the second portion.
6 . The semiconductor optical device of claim 5 , wherein there is a gap between the second connect portion and the second upright surface.
7 . The semiconductor optical device of claim 6 , wherein the insulating film overhangs the second upright surface.
8 . The semiconductor optical device of claim 1 , wherein:
each of the recesses has a bottom surface extending in the first direction from a lower end of the second slope surface, and
the bottom surface is flat and connected to the first slope surface.
9 . The semiconductor optical device of claim 1 , wherein
the pair of buried layers are a first buried layer and a second buried layer each including recesses,
the recesses in the first buried layer are first recesses arranged in the first direction, and
the recesses in the second buried layer are second recesses arranged in the first direction.
10 . The semiconductor optical device of claim 9 , wherein the first buried layer and the second buried layer are equal in width in the second direction.
11 . The semiconductor optical device of claim 9 , wherein:
the first recesses and the second recesses are line-symmetrical, and
a straight-line extending in the first direction on the mesa-stripe structure is an axis of symmetry.
12 . The semiconductor optical device of claim 11 , wherein each of the first recesses and a corresponding one of the second recesses are adjacent to each other in the second direction.
13 . The semiconductor optical device of claim 9 , wherein the first recesses and the second recesses are not symmetric with respect to a line.
14 . The semiconductor optical device of claim 13 , wherein the first recesses and the second recesses are arranged in a zigzag pattern in the first direction.
15 . The semiconductor optical device of claim 13 , wherein:
the first recesses include a pair of first recesses adjacent to each other in the first direction,
an area between the pair of first recesses is adjacent to a corresponding one of the second recesses in the second direction,
the second recesses include a pair of second recesses adjacent to each other in the first direction, and
an area between the pair of second recesses is adjacent to a corresponding one of the first recesses in the second direction.
16 . The semiconductor optical device of claim 13 , wherein:
the first recesses are in a first region of the upper surface of the first buried layer,
the second recesses are in a second region of the upper surface of the second buried layer, and
the first region and the second region are not adjacent to each other in the second direction.
17 . The semiconductor optical device of claim 1 , wherein:
the pair of buried layers are a first buried layer including the recesses and a second buried layer without the recesses, and
the first buried layer is larger than the second buried layer in width in the second direction.
18 . The semiconductor optical device of claim 17 , wherein:
the recesses in the first buried layer are a pair of recesses, and
a gap between the pair of recesses is greater than half of a length of the first buried layer in the first direction.
19 . The semiconductor optical device of claim 1 , wherein the second slope surface is a pair of second slope surfaces opposed to each other.