Display device and manufacturing method of display device
According to one embodiment, a manufacturing method of a display device includes preparing a processing substrate by forming a lower electrode, forming a rib, and forming a partition, forming an organic layer on the lower electrode, forming an upper electrode on the organic layer, forming a cap layer on the upper electrode, forming a sealing layer on the cap layer, forming a patterned resist on the sealing layer, and removing the sealing layer exposed from the resist by dry etching. The sealing layer includes a first high-density layer and a low-density layer. When dry etching is applied to the sealing layer, an etching rate of the low-density layer is greater than an etching rate of the first high-density layer.
1 . A manufacturing method of a display device, comprising:
preparing a processing substrate by forming a lower electrode above a substrate, forming a rib comprising an aperture overlapping the lower electrode, and forming a partition including a lower portion located on the rib and an upper portion located on the lower portion and protruding from a side surface of the lower portion;
forming an organic layer on the lower electrode in the aperture;
forming an upper electrode on the organic layer;
forming a cap layer on the upper electrode;
forming a sealing layer on the cap layer;
forming a patterned resist on the sealing layer; and
removing the sealing layer exposed from the resist by dry etching, wherein
the sealing layer includes:
a first high-density layer formed of an inorganic insulating material; and
a low-density layer which is stacked on the first high-density layer, has a density lower than the first high-density layer, and is formed of an inorganic insulating material, and
when dry etching is applied to the sealing layer, an etching rate of the low-density layer is greater than an etching rate of the first high-density layer.
2 . The manufacturing method of claim 1 , wherein
the forming the sealing layer includes:
forming the first high-density layer immediately above the lower electrode and immediately above the partition; and
forming the low-density layer which covers the first high-density layer and is in contact with the lower portion of the partition.
3 . The manufacturing method of claim 1 , wherein
the forming the sealing layer includes:
forming the low-density layer which covers the cap layer and is in contact with the lower portion of the partition; and
forming the first high-density layer which covers the low-density layer.
4 . The manufacturing method of claim 1 , wherein
the low-density layer and the first high-density layer are formed of silicon nitride.
5 . The manufacturing method of claim 1 , wherein
the sealing layer further includes a second high-density layer having a density higher than the low-density layer and formed of an inorganic insulating material, and
the forming the sealing layer includes:
forming the first high-density layer immediately above the lower electrode and immediately above the partition;
forming the low density-layer which covers the first high-density layer and is in contact with the lower portion of the partition; and
forming a second high-density layer which covers the low-density layer.
6 . The manufacturing method of claim 5 , wherein
the low-density layer, the first high-density layer and the second high-density layer are formed of silicon nitride.
7 . The manufacturing method of claim 1 , further comprising:
after removing the sealing layer,
removing the cap layer exposed from the sealing layer;
removing the upper electrode exposed from the cap layer; and
removing the organic layer exposed from the upper electrode.
8 . A display device comprising:
a substrate;
a lower electrode provided above the substrate;
a rib formed of an inorganic insulating material and comprising an aperture overlapping the lower electrode;
a partition comprising a lower portion provided on the rib and formed of a conductive material, and an upper portion provided on the lower portion and protruding from a side surface of the lower portion;
an organic layer provided on the lower electrode in the aperture;
an upper electrode which is provided on the organic layer and is in contact with the lower portion of the partition;
a cap layer provided on the upper electrode; and
a sealing layer which covers the cap layer and is in contact with the lower portion of the partition, wherein
the sealing layer includes:
a first high-density layer formed of an inorganic insulating material; and
a low-density layer which is stacked on the first high-density layer, has a density lower than the first high-density layer, and is formed of an inorganic insulating material.
9 . The display device of claim 8 , wherein
the upper portion of the partition is partly exposed from the organic layer, the upper electrode, the cap layer and the sealing layer formed immediately above the partition, and
the organic layer, the upper electrode, the cap layer and the sealing layer formed immediately above the partition are spaced apart from the organic layer, the upper electrode, the cap layer and the sealing layer formed immediately above the lower electrode.
10 . The display device of claim 8 , wherein
in the sealing layer,
the first high-density layer is formed immediately above the lower electrode and immediately above the partition, and
the low-density layer covers the first high-density layer and is in contact with the lower portion of the partition.
11 . The display device of claim 8 , wherein
in the sealing layer,
the low-density layer covers the cap layer and is in contact with the lower portion of the partition, and
the first high-density layer covers the low-density layer.
12 . The display device of claim 8 , wherein
the low-density layer and the first high-density layer are formed of silicon nitride.
13 . The display device of claim 8 , wherein
the sealing layer further includes a second high-density layer having a density higher than the low-density layer and formed of an inorganic insulating material, and
in the sealing layer,
the first high-density layer is formed immediately above the lower electrode and immediately above the partition,
the low-density layer covers the first high-density layer and is in contact with the lower portion of the partition, and
the second high-density layer covers the low-density layer.
14 . The display device of claim 13 , wherein
the low-density layer, the first high-density layer and the second high-density layer are formed of silicon nitride.
15 . The display device of claim 13 , wherein
a thickness of the low-density layer is greater than a thickness of the first high-density layer, and is greater than a thickness of the second high-density layer.
16 . The display device of claim 15 , wherein
the thickness of the low-density layer is greater than or equal to 0.6 times a thickness of the lower portion of the partition but less than or equal to 0.8 times the thickness of the lower portion of the partition.
17 . The display device of claim 16 , wherein
a sum of the thickness of the first high-density layer and the thickness of the second high-density layer is greater than or equal to 800 nm but less than or equal to 1000 nm.