BLANK MASK AND PHOTOMASK USING THE SAME
A blank mask includes a light transmissive substrate, and a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen. An average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.
1 . A blank mask comprising:
a light transmissive substrate; and
a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen,
wherein an average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.
2 . The blank mask of claim 1 , wherein a number of grains on the surface of the light-blocking layer is 20 or more and 55 or less per 0.01 μm 2 .
3 . The blank mask of claim 1 , wherein
the light-blocking layer further includes a first light-blocking layer and a second light-blocking layer disposed on the first light-blocking layer, and
an etching speed of the second light-blocking layer etched with argon gas is 0.3 Å/s or more and 0.5 Å/s or less.
4 . The blank mask of claim 1 , wherein
the light-blocking layer includes a first light-blocking layer and a second light-blocking layer disposed on the first light-blocking layer, and
an etching speed of the first light-blocking layer etched with argon gas is 0.56 Å/s or more.
5 . The blank mask of claim 1 , wherein an etching speed of the light-blocking layer etched with a chlorine-based gas is 1.5 Å/s or more.
6 . The blank mask of claim 1 , wherein the transition metal includes Fe and any one or more among Cr, Ta, Ti, and Hf.
7 . The blank mask of claim 6 , wherein the light-blocking layer is formed using a sputtering target including 0.0001 to 0.035 parts by weight of Fe based on a total of 100 parts by weight of the transition metal.
8 . The blank mask of claim 1 , wherein
the light-blocking layer further includes a first light-blocking layer and a second light-blocking layer disposed on the first light-blocking layer, and
the second light-blocking layer includes 40 at % or more and 70 at % or less transition metal.
9 . A photomask comprising:
a light transmissive substrate; and
a light-blocking pattern layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen,
wherein an average value of grain sizes of a surface of the light-blocking pattern layer ranges from 14 nm to 24 nm.
10 . A method of manufacturing a semiconductor device, comprising:
selectively exposing light incident from a light source through a photomask to a semiconductor wafer on which a resist layer is deposited; and
developing a pattern on the semiconductor wafer,
wherein the photomask includes a light transmissive substrate and a light-blocking pattern layer disposed on the light transmissive substrate,
the light-blocking pattern layer includes a transition metal and either one or both of oxygen and nitrogen, and
an average value of grain sizes of a surface of the light-blocking pattern layer ranges from 14 nm to 24 nm.
11 . The method of claim 10 , wherein the light-blocking layer further includes a plurality of light-blocking layers, and
an etching speed of a topmost light-blocking layer of the plurality of light-blocking layers etched with argon gas is 0.3 Å/s or more and 0.5 Å/s or less.
12 . The method of claim 10 , wherein the light-blocking layer further includes a plurality of light-blocking layers, and
an etching speed of an intermediate light-blocking layer of the plurality of light-blocking layers etched with argon gas is 0.56 Å/s or more.