METHODS FOR IMPROVING PASSIVATION LAYER DURABILITY
Methods, systems, and devices for improving passivation layer durability are described. A device may include a semiconductor substrate elongated along a first direction and a second direction. The first direction may be parallel to a width of the semiconductor substrate and the second direction may be parallel to a depth of the semiconductor substrate. The device may include one or more layers formed above the semiconductor substrate with respect to a third direction parallel to a height of the semiconductor substrate. At least a region of the one or more layers may include circuitry. The device may include a passivation layer formed above the one or more layers with respect to the third direction. The passivation layer may include a plurality of cavities that each extend through the passivation layer. The plurality of cavities and the circuitry may be non-overlapping with respect to the first direction and the second direction.
1 . An apparatus, comprising:
a semiconductor substrate elongated along a first direction and a second direction, the first direction parallel to a width of the semiconductor substrate and the second direction parallel to a depth of the semiconductor substrate;
one or more layers formed above the semiconductor substrate with respect to a third direction parallel to a height of the semiconductor substrate, wherein at least a region of the one or more layers comprises circuitry; and
a passivation layer formed above the one or more layers with respect to the third direction, the passivation layer comprising a plurality of cavities that each extend through the passivation layer, wherein the plurality of cavities and the circuitry are non-overlapping with respect to the first direction and the second direction.
2 . The apparatus of claim 1 , wherein the one or more layers comprise:
an insulating layer formed between the circuitry and the passivation layer, wherein each cavity of the plurality of cavities exposes a surface of the insulating layer.
3 . The apparatus of claim 1 , wherein each cavity of the plurality of cavities is formed in a shape of an elliptical cylinder comprising a height axis parallel to the third direction.
4 . The apparatus of claim 3 , wherein a ratio between a major axis and a minor axis of each elliptical cylinder is 3 to 1.
5 . The apparatus of claim 1 , wherein the plurality of cavities are arranged in a rectangular pattern comprising uniform spacing between each cavity of the plurality of cavities.
6 . The apparatus of claim 1 , wherein the semiconductor substrate comprises a silicon carbide material.
7 . The apparatus of claim 1 , wherein the one or more layers comprise:
a silicon carbide layer formed in contact with the semiconductor substrate;
a metal layer formed at least partially in contact with the silicon carbide layer; and
a silicon nitride layer formed at least partially in contact with the metal layer.
8 . The apparatus of claim 1 , wherein the circuitry comprises transistor circuitry.
9 . A method, comprising:
forming a semiconductor substrate elongated along a first direction and a second direction, the first direction parallel to a width of the semiconductor substrate and the second direction parallel to a depth of the semiconductor substrate;
forming one or more layers above the semiconductor substrate with respect to a third direction parallel to a height of the semiconductor substrate, wherein at least a region of the one or more layers comprises circuitry; and
forming a passivation layer above the one or more layers with respect to the third direction, the passivation layer comprising a plurality of cavities that each extend through the passivation layer, wherein the plurality of cavities and the circuitry are non-overlapping with respect to the first direction and the second direction.
10 . The method of claim 9 , wherein forming the one or more layers comprises:
forming an insulating layer between the circuitry and the passivation layer, wherein each cavity of the plurality of cavities exposes a surface of the insulating layer.
11 . The method of claim 9 , wherein forming each cavity of the plurality of cavities comprises:
forming a cavity in a shape of an elliptical cylinder comprising a height axis parallel to the third direction.
12 . The method of claim 11 , wherein a ratio between a major axis and a minor axis of each elliptical cylinder is 3 to 1.
13 . The method of claim 9 , wherein the plurality of cavities are arranged in a rectangular pattern comprising uniform spacing between each cavity of the plurality of cavities.
14 . The method of claim 9 , wherein forming the semiconductor substrate comprises:
forming the semiconductor substrate using a silicon carbide material.
15 . The method of claim 9 , wherein forming the one or more layers comprises:
forming a silicon carbide layer in contact with the semiconductor substrate;
forming a metal layer at least partially in contact with the silicon carbide layer; and
forming a silicon nitride layer at least partially in contact with the metal layer.
16 . A product formed by a method, comprising:
forming a semiconductor substrate elongated along a first direction and a second direction, the first direction parallel to a width of the semiconductor substrate and the second direction parallel to a depth of the semiconductor substrate;
forming one or more layers above the semiconductor substrate with respect to a third direction parallel to a height of the semiconductor substrate, wherein at least a region of the one or more layers comprises circuitry; and
forming a passivation layer above the one or more layers with respect to the third direction, the passivation layer comprising a plurality of cavities that each extend through the passivation layer, wherein the plurality of cavities and the circuitry are non-overlapping with respect to the first direction and the second direction.
17 . The product formed by the method of claim 16 , wherein forming the one or more layers comprises:
forming an insulating layer between the circuitry and the passivation layer, wherein each cavity of the plurality of cavities exposes a surface of the insulating layer.
18 . The product formed by the method of claim 16 , wherein forming each cavity of the plurality of cavities comprises:
forming a cavity in a shape of an elliptical cylinder comprising a height axis parallel to the third direction.
19 . The product formed by the method of claim 18 , wherein a ratio between a major axis and a minor axis of each elliptical cylinder is 3 to 1.
20 . The product formed by the method of claim 16 , wherein the plurality of cavities are arranged in a rectangular pattern comprising uniform spacing between each cavity of the plurality of cavities.