IP Library Granted Patent US 12,628,643
Granted Patent B2
US 12,628,643 · App. 18/372,977 · Granted May 12, 2026

Laser-formed interconnects for redundant devices

Inventors: Erich Radauscher (Raleigh, NC); Ronald S. Cok (Rochester, NY); Matthew Alexander Meitl (Durham, NC); Christopher Andrew Bower (Raleigh, NC); Christopher Michael Verreen (Raleigh, NC); Erik Paul Vick (Raleigh, NC)
Assignee: Daktronics, Inc.
H01L23/5258H01L23/528H01L23/544H10D86/441H10D86/60
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Quick Facts
Patent No.
US 12,628,643
App. No.
18/372,977
Granted
May 12, 2026
Kind
B2
Abstract

A parallel redundant system comprises a substrate, a first circuit disposed over the substrate, a first conductor disposed at least partially in a first layer over the substrate and wire routed to the first circuit, a second circuit disposed over the substrate, the second circuit redundant to the first circuit, a second conductor disposed in a second layer over the substrate and electrically connected to the second circuit, the second conductor disposed at least partially over the first conductor, a dielectric layer disposed at least partially between the first layer and the second layer, and a laser weld electrically connecting the first conductor to the second conductor.

Claims (28)

1 . A processable integrated circuit, comprising:

an integrated circuit substrate;

a circuit disposed in, on, or over the integrated circuit substrate;

an electrical connector electrically connected to the circuit; and

an opening structure electrically connected in serial between the electrical connector and the circuit, wherein the opening structure is constructed and arranged to form an electrical open when subjected to laser radiation.

2 . The processable integrated circuit of claim 1 , comprising a package containing the integrated circuit substrate and wherein the electrical connector comprises an interconnection lead.

3 . The processable integrated circuit of claim 2 , comprising a graphic disposed on the package, the graphic indicating the location of the opening structure.

4 . The processable integrated circuit of claim 2 , wherein the opening structure is an electrical conductor disposed on, in, or over the integrated circuit substrate that electrically connects the interconnection lead to the circuit.

5 . The processable integrated circuit of claim 1 , comprising a graphic indicating the location of the opening structure.

6 . The processable integrated circuit of claim 1 , wherein the opening structure is a thermally activated fuse.

7 . A method for processing an integrated circuit, comprising:

providing an integrated circuit substrate, a circuit disposed in, on, or over the integrated circuit substrate, an electrical connector electrically connected to the circuit, and an opening structure electrically connected in serial between the electrical connector and the circuit; and

exposing the opening structure to laser radiation, thereby forming an electrical open between the circuit and the electrical connector.

8 . A parallel redundant system, comprising:

a substrate;

a first conductor disposed at least partially in a first layer over the substrate and wire routed to the first circuit;

a second circuit disposed over the substrate;

a second conductor disposed in a second layer over the substrate and electrically connected to the second circuit, the second conductor disposed at least partially over the first conductor;

a dielectric layer disposed at least partially between the first layer and the second layer; and

a laser weld electrically connecting the first conductor to the second conductor through the dielectric layer.

9 . The parallel redundant system of claim 8 , comprising an interface circuit electrically connected to the first conductor and to the second circuit through the laser weld.

10 . The parallel redundant system of claim 9 , wherein the second circuit is an integrated circuit.

11 . The parallel redundant system of claim 10 , wherein the integrated circuit comprises an unpackaged semiconductor circuit and a broken tether.

12 . The parallel redundant system of claim 10 , wherein the integrated circuit comprises an opening structure.

13 . The parallel redundant system of claim 10 , wherein the integrated circuit comprises a shorting structure.

14 . The parallel redundant system of claim 8 , comprising two or more first conductors disposed in the first layer and two or more second conductors disposed in the second layer each second conductor electrically connected to the second circuit.

15 . The parallel redundant system of claim 14 , comprising two or more laser welds, each of the two or more laser welds electrically connecting one of the two or more first conductors to a corresponding one of the two or more second conductors.

16 . The parallel redundant system of claim 14 , wherein one or more of the two or more first conductors is electrically connected to a corresponding one of the two or more second conductors.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2026
From: X DISPLAY COMPANY TECHNOLOGY LIMITED
To: DAKTRONICS, INC.
Reel/Frame 075384/0160 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2024
From: RADAUSCHER, ERICH; COK, RONALD S.; MEITL, MATTHEW ALEXANDER; BOWER, CHRISTOPHER ANDREW; VERREEN, CHRISTOPHER MICHAEL; VICK, ERIK PAUL
To: X DISPLAY COMPANY TECHNOLOGY LIMITED
Reel/Frame 068583/0418 →
Continuity (4)
Continuation 17670810 · Feb 14, 2022
Continuation 16702352 · Dec 3, 2019
Provisional Application 62778519 · Dec 12, 2018
Related Publication 20240014129A1 · Jan 11, 2024
References Cited (101)
US 4678282A · Yaniv et al. · 1987 [cited by applicant]
US 5550066A · Tang et al. · 1996 [cited by applicant]
US 5621555A · Park · 1997 [cited by applicant]
US 6142358A · Cohn et al. · 2000 [cited by applicant]
US 6577367B2 · Kim · 2003 [cited by applicant]
US 7012382B2 · Cheang et al. · 2006 [cited by applicant]
US 7195733B2 · Rogers et al. · 2007 [cited by applicant]
US 7354801B2 · Sugiyama et al. · 2008 [cited by applicant]
US 7417692B2 · Lin · 2008 [cited by applicant]
US 7521292B2 · Rogers et al. · 2009 [cited by applicant]
US 7557367B2 · Rogers et al. · 2009 [cited by applicant]
US 7622367B1 · Nuzzo et al. · 2009 [cited by applicant]
US 7662545B2 · Nuzzo et al. · 2010 [cited by applicant]
US 7704684B2 · Rogers et al. · 2010 [cited by applicant]
US 7799699B2 · Nuzzo et al. · 2010 [cited by applicant]
US 7932123B2 · Rogers et al. · 2011 [cited by applicant]
US 7943491B2 · Nuzzo et al. · 2011 [cited by applicant]
US 7972875B2 · Rogers et al. · 2011 [cited by applicant]
US 8333860B1 · Bibl et al. · 2012 [cited by applicant]
US 8470701B2 · Rogers et al. · 2013 [cited by applicant]
US 8506867B2 · Menard · 2013 [cited by applicant]
US 8558243B2 · Bibl et al. · 2013 [cited by applicant]
US 8722458B2 · Rogers et al. · 2014 [cited by applicant]
US 8766970B2 · Chien et al. · 2014 [cited by applicant]
US 8791474B1 · Bibl et al. · 2014 [cited by applicant]
US 8794501B2 · Bibl et al. · 2014 [cited by applicant]
US 8835940B2 · Hu et al. · 2014 [cited by applicant]
US 8865489B2 · Rogers et al. · 2014 [cited by applicant]
US 8877648B2 · Bower et al. · 2014 [cited by applicant]
US 8889485B2 · Bower · 2014 [cited by applicant]
US 8934259B2 · Bower et al. · 2015 [cited by applicant]
US 8941215B2 · Hu et al. · 2015 [cited by applicant]
US 8987765B2 · Bibl et al. · 2015 [cited by applicant]
US 9049797B2 · Menard et al. · 2015 [cited by applicant]
US 9087764B2 · Chan et al. · 2015 [cited by applicant]
US 9105714B2 · Hu et al. · 2015 [cited by applicant]
US 9111464B2 · Bibl et al. · 2015 [cited by applicant]
US 9139425B2 · Vestyck · 2015 [cited by applicant]
US 9153171B2 · Sakariya et al. · 2015 [cited by applicant]
US 9161448B2 · Menard et al. · 2015 [cited by applicant]
US 9165989B2 · Bower et al. · 2015 [cited by applicant]
US 9166114B2 · Hu et al. · 2015 [cited by applicant]
US 9178123B2 · Sakariya et al. · 2015 [cited by applicant]
US 9217541B2 · Bathurst et al. · 2015 [cited by applicant]
US 9240397B2 · Bibl et al. · 2016 [cited by applicant]
US 9252375B2 · Bibl et al. · 2016 [cited by applicant]
US 9355854B2 · Meitl et al. · 2016 [cited by applicant]
US 9358775B2 · Bower et al. · 2016 [cited by applicant]
US 9367094B2 · Bibl et al. · 2016 [cited by applicant]
US 9412727B2 · Menard et al. · 2016 [cited by applicant]
US 9478583B2 · Hu et al. · 2016 [cited by applicant]
US 9484504B2 · Bibl et al. · 2016 [cited by applicant]
US 9520537B2 · Bower et al. · 2016 [cited by applicant]
US 9555644B2 · Rogers et al. · 2017 [cited by applicant]
US 9583533B2 · Hu et al. · 2017 [cited by applicant]
US 9589944B2 · Higginson et al. · 2017 [cited by applicant]
US 9601356B2 · Bower et al. · 2017 [cited by applicant]
US 9640715B2 · Bower et al. · 2017 [cited by applicant]
US 9716082B2 · Bower et al. · 2017 [cited by applicant]
US 9761754B2 · Bower et al. · 2017 [cited by applicant]
US 9765934B2 · Rogers et al. · 2017 [cited by applicant]
US 9865832B2 · Bibl et al. · 2018 [cited by applicant]
US 9929053B2 · Bower et al. · 2018 [cited by applicant]
US 10255834B2 · Cok et al. · 2019 [cited by applicant]
US 10381275B2 · Hong et al. · 2019 [cited by applicant]
US 10395582B2 · Cok et al. · 2019 [cited by applicant]
US 11282786B2 · Radauscher · 2022 [cited by examiner]
US 11804431B2 · Radauscher · 2023 [cited by examiner]
US 20030141570A1 · Chen et al. · 2003 [cited by applicant]
US 20040263460A1 · Lu · 2004 [cited by applicant]
US 20060160261A1 · Sheats et al. · 2006 [cited by applicant]
US 20100306993A1 · Mayyas et al. · 2010 [cited by applicant]
US 20130309792A1 · Tischler et al. · 2013 [cited by applicant]
US 20130316487A1 · De Graff et al. · 2013 [cited by applicant]
US 20140159043A1 · Sakariya et al. · 2014 [cited by applicant]
US 20160093600A1 · Bower et al. · 2016 [cited by applicant]
US 20170025075A1 · Cok et al. · 2017 [cited by applicant]
US 20170338374A1 · Zou et al. · 2017 [cited by applicant]
US 20180167575A1 · Watanabe et al. · 2018 [cited by applicant]
US 20180301589A1 · Burroughs et al. · 2018 [cited by applicant]
US 20180374738A1 · Lee · 2018 [cited by examiner]
US 20190115287A1 · Derai et al. · 2019 [cited by applicant]
US 20190164855A1 · Hong et al. · 2019 [cited by applicant]
US 20190348392A1 · Chen · 2019 [cited by examiner]
WO WO20140149864A1 · 2014 [cited by applicant]
Bower, C. A. et al., Emissive displays with transfer-printed assemblies of 8 μm ×15 μm inorganic light-emitting diodes, Photonics Research, 5(2):A23-A29, (2017). [cited by applicant]
Bower, C. A. et al., Micro-Transfer-Printing: Heterogeneous Integration of Microscale Semiconductor Devises using Elastomer Stamps, IEEE Conference, (2014). [cited by applicant]
Bower, C. A. et al., Transfer Printing: An Approach for Massively Parallel Assembly of Microscale Devices, IEEE, Electronic Components and Technology Conference, (2008). [cited by applicant]
Cok, R. S. et al., 60.3: AMOLED Displays Using Transfer-Printed Integrated Circuits, Society for Information Display, 10:902-904, (2010). [cited by applicant]
Cok, R. S. et al., Inorganic light-emitting diode displays using micro-transfer printing, Journal of the SID, 25(10):589-609, (2017). [cited by applicant]
Cok, R. S. et al., AMOLED displays with transfer-printed integrated circuits, Journal of SID, 19(4):335-341, (2011). [cited by applicant]
Feng, X. et al., Competing Fracture in Kinetically Controlled Transfer Printing, Langmuir, 23(25):12555-12560, (2007). [cited by applicant]
Gent, A.N., Adhesion and Strength of Viscoelastic Solids. Is There a Relationship between Adhesion and Bulk Properties, American Chemical Society, Langmuir, 12(19):4492-4496, (1996). [cited by applicant]
Hamer, J. W. et al., 63:2: AMOLED Displays using Transfer-Printed Integrated Circuits, SID, 09:947-950, (2009). [cited by applicant]
Kim, Dae-Hyeong et al., Optimized Structural Designs for Stretchable Silicon Integrated Circuits, Small, 5(24):2841-2847, (2009). [cited by applicant]
Kim, Dae-Hyeong et al., Stretchable and Foldable Silicon Integrated Circuits, Science, 320:507-511, (2008). [cited by applicant]
Kim, S. et al., Microstructured elastomeric surfaces with reversible adhesion and examples of their use in deterministic assembly by transfer printing, PNAS, 107(40):17095-17100 (2010). [cited by applicant]
Kim, T. et al., Kinetically controlled, adhesiveless transfer printing using microstructured stamps, Applied Physics Letters, 94(11):113502-1-113502-3, (2009). [cited by applicant]
Meitl, M. A. et al., Transfer printing by kinetic control of adhesion to an elastomeric stamp, Nature Material, 5:33-38, (2006). [cited by applicant]
Michel, B. et al., Printing meets lithography: Soft approaches to high-resolution patterning, J. Res. & Dev. 45(5):697-708, (2001). [cited by applicant]
Trindade, A.J. et al., Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes, Crown, pp. 217-218, (2012). [cited by applicant]