Wire bonding method and apparatus for electromagnetic interference shielding
Apparatuses relating generally to a microelectronic package having protection from electromagnetic interference are disclosed. In an apparatus thereof, a platform has an upper surface and a lower surface opposite the upper surface and has a ground plane. A microelectronic device is coupled to the upper surface of the platform. Wire bond wires are coupled to the ground plane with a pitch. The wire bond wires extend away from the upper surface of the platform with upper ends of the wire bond wires extending above an upper surface of the microelectronic device. The wire bond wires are spaced apart from one another to provide a fence-like perimeter to provide an interference shielding cage. A conductive layer is coupled to at least a subset of the upper ends of the wire bond wires for electrical conductivity to provide a conductive shielding layer to cover the interference shielding cage.
1. A microelectronic device, comprising:
a first device disposed on a platform;
a second device disposed on the platform;
a first interference shield comprising a first plurality of wire bond wires, wherein the first device and the second device are separated from one another by the first interference shield;
a second interference shield comprising a second plurality of wire bond wires, wherein the first device and the second device are separated from one another by the second interference shield;
a first spacing between a first adjacent pair of wire bond wires in the first interference shield,
wherein the first spacing attenuates electromagnetic radiation below a first frequency; and
a second spacing between a second adjacent pair of wire bond wires in the second interference shield, wherein:
the second spacing is larger than the first spacing;
the second spacing attenuates electromagnetic radiation below a second frequency; and
the second frequency is different than the first frequency.
2. The microelectronic device of claim 1 , wherein the platform is a leadframe.
3. The microelectronic device of claim 1 , wherein the platform is a circuit board.
4. The microelectronic device of claim 1 , wherein the platform is a substrate.
5. The microelectronic device of claim 1 , wherein the platform is a redistribution layer.
6. The microelectronic device of claim 1 , wherein the platform is a silicon substrate.
7. The microelectronic device of claim 1 , wherein the first device is coupled to the second device though a gap between wire bond wires in the first interference shielding.
8. The microelectronic device of claim 1 , further comprising a third device disposed on the platform.
9. The microelectronic device of claim 8 , wherein the first interference shield and the second interference shield are between the third device and the second device.
10. The microelectronic device of claim 9 , further comprising a third interference shield comprising a third plurality of wire bond wires, wherein the third device and the first device are separated from one another by the third interference shield.
11. The microelectronic device of claim 10 , further comprising a third spacing between a third adjacent pair of wire bond wires in the third interference shield, wherein the third spacing attenuates electromagnetic radiation below the first frequency.
12. The microelectronic device of claim 1 , wherein:
the first spacing is about 1/10th or less than a first wavelength of electromagnetic radiation of the first frequency; and
the second spacing is about 1/10th or less than a second wavelength of electromagnetic radiation of the second frequency.
13. The microelectronic device of claim 11 , wherein:
the first and third spacings are about 1/10th or less than the first wavelength of electromagnetic radiation of the first frequency; and
the second spacing is about 1/10th or less than the second wavelength of electromagnetic radiation of the second frequency.
14. The microelectronic device of claim 1 , wherein
the first interference shield attenuates electromagnetic radiation below the first frequency by about 97% or more; and
the second interference shield attenuates electromagnetic radiation below the second frequency by about 97% or more.
15. The microelectronic device of claim 11 , wherein
the first and third interference shields attenuates electromagnetic radiation below first frequency by about 97% or more; and
the second interference attenuates electromagnetic radiation below the second frequency by about 97% or more.