MICROFABRICATED ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS
An ultrasound device includes: ultrasonic transducer cavities; a membrane comprising a silicon layer that seals the ultrasonic transducer cavities; electrode regions configured to control vibration of the membrane; and a complementary metal-oxide-semiconductor (CMOS) substrate including integrated circuitry that is electrically coupled to the electrode regions. The ultrasonic transducer cavities are disposed between the membrane and the integrated circuitry along a vertical direction of the ultrasound device.
1 . An ultrasound device, comprising:
ultrasonic transducer cavities;
a membrane comprising a silicon layer that seals the ultrasonic transducer cavities;
electrode regions configured to control vibration of the membrane; and
a complementary metal-oxide-semiconductor (CMOS) substrate including integrated circuitry that is electrically coupled to the electrode regions,
wherein the ultrasonic transducer cavities are disposed between the membrane and the integrated circuitry along a vertical direction of the ultrasound device.
2 . The ultrasound device of claim 1 , further comprising:
isolation regions disposed between the electrode regions of adjacent ultrasound transducer cavities when viewed in the vertical direction,
wherein the isolation regions are doped.
3 . The ultrasound device of claim 1 , further comprising:
an embedded electrical contact between the CMOS substrate and an engineered substrate that includes the ultrasonic transducer cavities,
wherein ends of the embedded electrical contact directly connect:
a bond point between the CMOS substrate and the engineered substrate; and
an electrical contact disposed on the membrane.
4 . The ultrasound device of claim 3 ,
wherein the embedded electrical contact protrudes though the engineered substrate along the vertical direction.
5 . The ultrasound device of claim 4 ,
wherein the embedded electrical contact protrudes though the membrane along the vertical direction.