Cadmium-free quantum dots, tunable quantum dots, quantum dot containing polymer, articles, films, and 3D structure containing them and methods of making and using them
Quantum dots that are cadmium-free and/or stoichiometrically tuned are disclosed, as are methods of making them. Inclusion of the quantum dots and others in a stabilizing polymer matrix is also disclosed. The polymers are chosen for their strong binding affinity to the outer layers of the quantum dots such that the bond dissociation energy between the polymer material and the quantum dot is greater than the energy required to reach the melt temperature of the cross-linked polymer.
1. A II-I-III-VI semiconductor nanocrystal, wherein the II-I-III-VI semiconductor nanocrystal comprises a core comprising a II-I-II-I-III-VI semiconductor, wherein the core is modified with a zinc alkylcarboxylate or a dialkyl zinc.
2. The II-I-III-VI semiconductor nanocrystal of claim 1 , wherein the Group I element is Cu and the Group II element is selected from Zn and Hg, wherein the Group II elements are not the same.
3. The II-I-III-VI semiconductor nanocrystal of claim 1 , wherein the Group III element is selected from In, Ga, and Al.
4. The II-I-III-VI semiconductor nanocrystal of claim 1 , wherein the Group VI element is selected from S, Se, Te, Po, and O.
5. The II-I-III-VI semiconductor nanocrystal of claim 1 , wherein the II-I-III-VI semiconductor comprises ZnCuInS.
6. The II-I-III-VI semiconductor nanocrystal of claim 5 , wherein the II-I-III-VI semiconductor nanocrystal is configured to emit radiation in a range from 530 nm to 750 nm.
7. The II-I-III-VI semiconductor nanocrystal of claim 1 , wherein the II-I-III-VI semiconductor comprises ZnCuGaS.
8. The II-I-III-VI semiconductor nanocrystal of claim 1 , wherein the core is modified with a zinc alkylcarboxylate.
9. The II-I-III-VI semiconductor nanocrystal of claim 8 , wherein the zinc alkylcarboxylate is zinc acetate.
10. The II-I-III-VI semiconductor nanocrystal of claim 1 , wherein the core is modified with a dialkyl zinc.
11. The II-I-III-VI semiconductor nanocrystal of claim 10 , wherein the dialkyl zinc is dimethyl zinc.
12. The II-I-III-VI semiconductor nanocrystal of claim 1 , further comprising a ZnS cap layer overlying the core.
13. The II-I-III-VI semiconductor nanocrystal of claim 12 , further comprising an Al 2 O 3 cap layer overlying the ZnS cap layer.
14. The II-I-III-VI semiconductor nanocrystal of claim 1 , further comprising an Al 2 O 3 cap layer overlying the core.
15. A plurality of the II-I-III-VI semiconductor nanocrystals of claim 1 .
16. An optical device comprising the semiconductor nanocrystal of claim 1 .
17. An optoelectronic device comprising the semiconductor nanocrystal of claim 1 .